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    GeneSic Semiconductor Inc GA05JT12-247

    TRANS SJT 1200V 5A TO247AB
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    GeneSic Semiconductor Inc GA05JT12-263

    TRANS SJT 1200V 15A D2PAK
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    Newark GA05JT12-263 Bulk 1,250
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    NAC GA05JT12-263 1,250
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    GeneSic Semiconductor Inc GA05JT12-CAL

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    NAC GA05JT12-CAL 1
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    GA05JT12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GA05JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 5A 1.2KV Original PDF
    GA05JT12-263 GeneSiC Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 15A Original PDF

    GA05JT12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-263 O-263 GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA05JT12-263 O-263-7L) GA05JT12 8338E-48 0733E-26 254E-12 0E-1209

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) Features •        = = = = 1200 V 210 mΩ 15 A 80 Package 250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		PDF GA05JT12-CAL GA05JT12 00E-47 26E-28 254E-12 0E-1209

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA05JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA05JT12-247 GA05JT12-247. 29-JAN-2015 GA05JT12 8338D 8338E-48 0733E-26 254E-12 0E-1209

    IRFD630

    Abstract: HCPL-322J HCPL322J TO-247AB
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA05JT12-247 O-247 GA05JT12 8338E-48 0733E-26 254E-12 0E-1209

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA05JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-Jun-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA05JT12-263 GA05JT12-263. 05-Jun-2015 GA05JT12 8338E-48 0733E-26 254E-12 0E-1209

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-CAL Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA05JT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.0 $ * $Date: 12-SEP-2014 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA05JT12-CAL GA05JT12-CAL. 12-SEP-2014 GA05JT12 00ENO 00E-47 26E-28 254E-12 0E-1209

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182