hcpl 322j
Abstract: hcpl-322j HCPL316
Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
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Original
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PDF
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GA10JT12-247
O-247AB
GA10JT12
00E-47
26E-28
50E-10
11E-9
00E-3
hcpl 322j
hcpl-322j
HCPL316
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IRFD630
Abstract: HCPL-322J HCPL322J TO-247AB
Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
PDF
|
GA05JT12-247
O-247AB
GA05JT12
00E-47
26E-28
77E-10
62E-10
00E-3
IRFD630
HCPL-322J
HCPL322J
TO-247AB
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Untitled
Abstract: No abstract text available
Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
PDF
|
GA20JT12-247
O-247AB
GA20JT12
00E-47
26E-28
98E-10
22E-9
50E-3
|
hcpl-322j
Abstract: hcpl 322j
Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch
|
Original
|
PDF
|
GA50JT12-247
O-247AB
GA50JT12
00E-47
26E-28
75E-9
57E-9
00E-3
hcpl-322j
hcpl 322j
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