KM29V16000ATS
Abstract: KM29V16000
Text: KM29V16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29V16000ATS
KM29V16000ATS
KM29V16000
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PDF
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400F
Abstract: KM29V64000T
Text: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.
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Original
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KM29V64000T
400F
KM29V64000T
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PDF
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KM29V16000AIT
Abstract: KM29V16000A KM29V16000AT KM29V16000
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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Original
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KM29V16000AT,
KM29V16000AIT
KM29V16000AIT
KM29V16000A
KM29V16000AT
KM29V16000
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.
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OCR Scan
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KM29V16000ATS/RS
6000A
264-byte
250ns
0D242Ã
Figure15
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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OCR Scan
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KM29V16000AT,
KM29V16000AIT
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective
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OCR Scan
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KM29V040T
512Kx8Bit
KM29V040T
32-byte
500us
120ns/byte.
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000TS
29V32000
KM29N32000
KM29W32000
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PDF
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29V040
Abstract: No abstract text available
Text: FLASH MEMORY KM29V040T, KM29V040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. Historv Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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OCR Scan
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KM29V040T,
KM29V040IT
KM29V040
KM29N040
29W040
29V040
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.
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OCR Scan
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KM29V64000T
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PDF
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TS 4142
Abstract: ro1f
Text: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase
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OCR Scan
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KM29V64001
200us
71b4142
DD2447D
-TSOP2-400F
74tMAX
-TSQP2-400R
DD24471
TS 4142
ro1f
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PDF
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A17-A22
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase
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OCR Scan
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KM29V64000TS/RS
200us
KM29V64000
P2-400F
10max]
-TSOP2-400R
A17-A22
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PDF
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3171S
Abstract: No abstract text available
Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND
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OCR Scan
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KM29V16000ARS
KM29V16000ATS/RS
264-byte
250fjs
003172R
-TSOP2-400F
-TSOP2-400R
3171S
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PDF
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29V640
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY KM29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit.
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KM29V64000T/R
KM29V64000T/R
528-byte
200ns
29V640
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PDF
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KM29V32000TS
Abstract: No abstract text available
Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29V32000TS
250us
KM29V32000TS
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29V32000T, KM29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
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KM29V32000T,
KM29V32000IT
29V32000
KM29N32000
KM29W32000
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PDF
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b8331
Abstract: No abstract text available
Text: KM29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND
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OCR Scan
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KM29V32000TS/RS
250us
32000T
b8331
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PDF
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29V040
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us
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OCR Scan
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KM29V040T
512Kx8Bit
512Kx8
500us
400mil/0
KM29V040T
KM29V040
-TSOP2-400F
-TSQP2-400R
29V040
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PDF
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EM 319
Abstract: em319 GD5434
Text: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array
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OCR Scan
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KM29V32000T/R
250us
\256Byte\
bH14H
EM 319
em319
GD5434
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PDF
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L4142
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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OCR Scan
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KM29V16000AT/R
250us
L4142
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Information KM29V64000T/R FLASH MEMORY 8M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its - Memory Cell Array
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OCR Scan
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KM29V64000T/R
KM29V64000T/R
528-byte
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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OCR Scan
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KM29V040T
512Kx8Bit
KM29V040T
32-byte
500us
120ns/byte.
KM29V040
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit
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OCR Scan
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KM29V16000ATS
KM29V16000ATS/RS
264-byte
250ps
-TSOP2-400F
-TSOP2-400R
0031flfll
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PDF
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Untitled
Abstract: No abstract text available
Text: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V32000T/R is a 4M 4,194,304 x8 bit NAND • Organization Flash memory with a spare 128K(131,072)x8 bit. - Memory Cell Array : (4M +128K)bit x 8bit
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OCR Scan
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KM29V32000T/R
KM29V32000T/R
528-byte
250ns
Q02435Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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OCR Scan
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KM29V16000AT/R
250us
71L4142
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PDF
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