400F
Abstract: KM29V64000T
Text: KM29V64000T FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed t BERS Parameter : 10ms Max. → 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
400F
KM29V64000T
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V64000T Document Title 8M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S Param eter: 10ms Max. —> 4ms(Max.). 2. Removed reverse type package.
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KM29V64000T
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A17-A22
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase
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KM29V64000TS/RS
200us
KM29V64000
P2-400F
10max]
-TSOP2-400R
A17-A22
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29V640
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY KM29V64000T/R 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND - Memory Cell Array •Data Register Flash memory with a spare 256K(262,144)x8 bit.
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KM29V64000T/R
KM29V64000T/R
528-byte
200ns
29V640
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Untitled
Abstract: No abstract text available
Text: Advance Information KM29V64000T/R FLASH MEMORY 8M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its - Memory Cell Array
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KM29V64000T/R
KM29V64000T/R
528-byte
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Untitled
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND
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KM29V64000TS/RS
KM29V64000TS/RS
528-byte
200ns
KM29V64000
7Sb4142
00E442b
-TSOP2-400F
-TSQP2-400R
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Untitled
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY KM29V64000TS/RS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND
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KM29V64000TS/RS
200us
KM29V64000
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tl527
Abstract: 741i NCN30
Text: Advance Information KM 29V64000T/R FLASH M EM O RY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The K M 29V 64000T /R is a 8 M 8 ,38 8 ,6 0 8 x8 bit N A N D • O rganization Plash m em ory w ith a sp a re 2 5 6 K (2 6 2 ,1 4 4 )x 8 bit.
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KM29V64000T/R
200us
tl527
741i
NCN30
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29V640
Abstract: No abstract text available
Text: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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200us
KM29V64000R
0D31BÃ
29V640
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KM29N16000TS
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction 2. Product Guide 3. Ordering information II. 4M FLASH MEMORY 1. KM29N040T 5.0V / 512K x8 bit 17 2. KM29V040T 3.3V / 512K x8 bit 36 57 16M FLASH MEMORY IV. V. 1. KM29N16000T7R 5.0V / 2M 2. KM29N16000TS/RS
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KM29N040T
KM29V040T
KM29N16000T7R
KM29N16000TS/RS
KM29N16000ET/R
KM29N16000ETS/RS
29N16000AT/R
KM29N16000ATS/RS
KM29V16000AT/R
KM29V16000ATS/RS
KM29N16000TS
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J32H
Abstract: No abstract text available
Text: KM29 V 6 4 0 0 0 R ELECTRONICS ei c r Fl ash Figure 1. FUNCTIONAL BLOCK DIAGRAM _r Vcc Vss Y-Gating A 9 -A 22 2nd half Page Register & S/A X-Buffers Latches & Decoders A0-A7 64M + 2M Bit NAND Flash ARRAY Y-Buffers Latches & Decoders 512+ 16 Bytex 16384 1st half Page Register & S/A
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V64000R
A9-A22
16kr0w
256Byte)
16Pages
KM29V64000R
J32H
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Untitled
Abstract: No abstract text available
Text: MEM ORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. rower Supply 512Kx 8 5V ±10% 3.3V±10% 16M bit 2M x 8 5V ±10% Part Number KM29N040T Features Package 32B Page Mode 4K B Block size 44 40 T S O P II tR C = 120ns = 20us tRC=80ns 256B Page Mode
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512Kx
KM29N040T
KM29V040T
16000T/R
KM29N16000TS/RS
KM29N16000ET/ER
29N16000ETS/ERS
120ns
KM29N16000AT/AR
KM29N16000ATS/ARS
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TSOP 48 Package nand memory
Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.
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512KX
1Mx16
KM28N800
KM28U800
90/100/120ns
48CSP
KM28U160
80/90/120ns
KM29U128T
KM29U128IT
TSOP 48 Package nand memory
NAND flash memory
nor flash
1Mx16 flash
TSOP I
KM29N040T
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 12
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KM28U800-T/B
512Kx16bit.
KM28N800-T/B
x16bit.
KM28U160-T/B
KM29U128T/IT
V/512Kx8bit
V/512Kx8bit.
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY KM29U64000T, KM29U64000IT 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : 8M ♦ 256K bit x 8bit - Data Register : (512 + 16)bit x8b# • Automatic Program and Erase
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KM29U64000T,
KM29U64000IT
528-Byte
200ns
KM29V64000
KM29N64000
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