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    3171S

    Abstract: No abstract text available
    Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND


    OCR Scan     		PDF KM29V16000ARS KM29V16000ATS/RS 264-byte 250fjs 003172R -TSOP2-400F -TSOP2-400R 3171S

    s 2 umi 1A 250V

    Abstract: 2N6249 2N6251 2N6250 N62S n6250
    Text: 2N6249 2N6250 2N6251 POWER TRANSISTORS 10A, 450V, Fast Switching, Silicon NPN Mesa FEATURES • Collector-Base Voltage: up to 450V • Peak Collector Current: 30A • Low Saturation Voltage • Maximum Safe Area of Operation D ESCRIPTION These high voltage glass passivated power


    OCR Scan     		PDF 2N6249 2N6250 2N6251 passi20 s 2 umi 1A 250V 2N6251 N62S n6250

    Untitled

    Abstract: No abstract text available
    Text: KM29N3 2000R ELECTRONICS Fl ash 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


    OCR Scan     		PDF KM29N3 2000R 250us KM29N32000R 0031L