KM29V16000ATS
Abstract: KM29V16000
Text: KM29V16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29V16000ATS
KM29V16000ATS
KM29V16000
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KM29V16000AIT
Abstract: KM29V16000A KM29V16000AT KM29V16000
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29V16000AT,
KM29V16000AIT
KM29V16000AIT
KM29V16000A
KM29V16000AT
KM29V16000
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KM29N16000AT
Abstract: KM29N16000AIT KM29V16000 KM29N16000A
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000AT,
KM29N16000AIT
KM29N16000AT
KM29N16000AIT
KM29V16000
KM29N16000A
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KM29W16000AIT
Abstract: KM29W16000AT
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
KM29W16000AIT
KM29W16000AT
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KM29V16000
Abstract: KM29N16000ATS
Text: KM29N16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000ATS
KM29V16000
KM29N16000ATS
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Device-List
Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Text: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera
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LabTool-48
AC29LV400B
AC29LV400T
M6759
M8720
AS29F040
Device-List
NEC D2716D
novatek nt68f63
nt68f63
NEC D2732D
D2716D
16V8H-25
ATMEL 220 24C16
D2732D
16V8H-15
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NEC D2732D
Abstract: nt68f63 novatek nt68f63 d2716d NEC D2716D atc 93lc46 D2732D CIRCUIT NEC D2716D TMS87C510 16V8H-25
Text: Dataman-48 Version 4.30 <ALL> Device List ALi M6759 www.dataman.com M6759 *44 M6759 *44Q M8720 AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera EP1210 EP220 EP312 EP330 EP900 EP910-T EPC1064 EPC1213 EPC1441 as 1213 EPM3064A *44 EPM5192 @84 EPM7032AEas7032 *44
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Dataman-48
M6759
M8720
AS29LV800B
AS29LV800T
EP1210
EP220
NEC D2732D
nt68f63
novatek nt68f63
d2716d
NEC D2716D
atc 93lc46
D2732D
CIRCUIT NEC D2716D
TMS87C510
16V8H-25
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KM29W16000ATS
Abstract: No abstract text available
Text: KM29W16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000ATS
KM29W16000ATS
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atc 93lc46
Abstract: 25LV512 39SF020A 25LV010 49LF040 25LF020A 95p08 89lpc932 nt68f63g 39vf020
Text: LabTool-48XP Version 5.60 <ALL> Device List Page 1 of 23 ACTRANS AC29LV400B *44PS AC39VF080 *40TS AC29LV400B *48TS AC39VF088 *48TS AC29LV400T *44PS AC39VF800 *48TS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV400B *48TS
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LabTool-48XP
AC29LV400B
AC39VF080
AC39VF088
AC29LV400T
AC39VF800
M6759
atc 93lc46
25LV512
39SF020A
25LV010
49LF040
25LF020A
95p08
89lpc932
nt68f63g
39vf020
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.
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KM29V16000ATS/RS
6000A
264-byte
250ns
0D242Ã
Figure15
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Untitled
Abstract: No abstract text available
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29V16000AT,
KM29V16000AIT
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3171S
Abstract: No abstract text available
Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND
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KM29V16000ARS
KM29V16000ATS/RS
264-byte
250fjs
003172R
-TSOP2-400F
-TSOP2-400R
3171S
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L4142
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V16000AT/R
250us
L4142
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Untitled
Abstract: No abstract text available
Text: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit
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KM29V16000ATS
KM29V16000ATS/RS
264-byte
250ps
-TSOP2-400F
-TSOP2-400R
0031flfll
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Untitled
Abstract: No abstract text available
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).
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KM29V16000AT,
KM29V16000AIT
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000ATS/RS FLASH MEMORY 2M X 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register The KM29V16000ATS/RS is a 2M(2,097,152)x8 bit NAND Flash memory with a spare 64K(65.536)x8 bit. Its NAND
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KM29V16000ATS/RS
250us
KM29V16000A
Figure15
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Untitled
Abstract: No abstract text available
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Tills 2M x 8 Bit NAND Flash Memory Revision History Draft Date Revision No. History 0.0 Data Sheet, 1.0 1. 2. 3. 4. 1.1 1997. Data Sheet, 1998. Changed I b e r s p a ra m e te r: 5ms Typ. —» 2ms(Typ ).
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KM29V16000AT,
KM29V16000AIT
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Untitled
Abstract: No abstract text available
Text: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V16000AR
250us
003170b
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V16000ATS Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29V16000ATS
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29V16000ATS Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 D ata S hee t, 1997. A pril 10th 1997 1.0 D ata S hee t, 1998. A pril 10th 1998 Remark 1. C h a n g e d tBER S p a ra m e te r: 5 m s T yp . —> 2m s(T yp .).
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KM29V16000ATS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000AT/AR is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit cell provides the most cost-effective solution for the mass
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KM29V16000AT/R
KM29V16000AT/AR
264-byte
250ns
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Untitled
Abstract: No abstract text available
Text: KM29V16000ATS_ FLASH MEMORY Document Tills 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBERS p a ra m e te r: 5ms Typ. —» 2ms(Typ.).
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KM29V16000ATS
264-Byte
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ti77
Abstract: BV EI 301
Text: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase
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KM29V16000ATS/RS
250us
KM29V16000A
Figure15
0D242fl2
ti77
BV EI 301
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KM29N16000TS
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction 2. Product Guide 3. Ordering information II. 4M FLASH MEMORY 1. KM29N040T 5.0V / 512K x8 bit 17 2. KM29V040T 3.3V / 512K x8 bit 36 57 16M FLASH MEMORY IV. V. 1. KM29N16000T7R 5.0V / 2M 2. KM29N16000TS/RS
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KM29N040T
KM29V040T
KM29N16000T7R
KM29N16000TS/RS
KM29N16000ET/R
KM29N16000ETS/RS
29N16000AT/R
KM29N16000ATS/RS
KM29V16000AT/R
KM29V16000ATS/RS
KM29N16000TS
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