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    R10-T

    Abstract: No abstract text available
    Text: PRELIMINARY KM29N040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us


    OCR Scan     		PDF KM29N040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29N040T KM29N040 -TSOP2-400F -TSQP2-400R R10-T

    TS 4142

    Abstract: ro1f
    Text: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase


    OCR Scan     		PDF KM29V64001 200us 71b4142 DD2447D -TSOP2-400F 74tMAX -TSQP2-400R DD24471 TS 4142 ro1f