g50n60
Abstract: No abstract text available
Text: High-Gain IGBTs w/Diode IXGH50N60B4D1 IXGQ50N60B4D1 VCES = 600V IC110 = 36A VCE sat ≤ 1.80V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous
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IXGH50N60B4D1
IXGQ50N60B4D1
IC110
O-247
IC110
IF110
g50n60
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IXGQ50N60B4D1
Abstract: IXGH50N60B4D1 G50N60
Text: High-Gain IGBTs w/Diode IXGH50N60B4D1 IXGQ50N60B4D1 VCES = 600V IC110 = 50A VCE sat ≤ 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient
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Original
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PDF
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IXGH50N60B4D1
IXGQ50N60B4D1
IC110
O-247
IC110
IF110
IXGQ50N60B4D1
G50N60
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Untitled
Abstract: No abstract text available
Text: High-Gain IGBTs w/Diode VCES = 600V IC110 = 50A VCE sat ≤ 1.8V IXGH50N60B4D1 IXGQ50N60B4D1 Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient
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Original
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PDF
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IC110
IXGH50N60B4D1
IXGQ50N60B4D1
O-247
IF110
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