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    IRFD21 Search Results

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    IRFD21 Price and Stock

    Vishay Siliconix IRFD210PBF

    MOSFET N-CH 200V 600MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD210PBF Bulk 13,384 1
    • 1 $0.94
    • 10 $0.767
    • 100 $0.5964
    • 1000 $0.5
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    RS IRFD210PBF Bulk 2,500
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    • 10000 $0.93
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    Bristol Electronics IRFD210PBF 1,350
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    New Advantage Corporation IRFD210PBF 1,500 1
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    • 100 $0.6462
    • 1000 $0.6462
    • 10000 $0.6462
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    Rochester Electronics LLC IRFD213

    MOSFET N-CH 250V 450MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD213 Tube 5,563 468
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    Rochester Electronics LLC IRFD210

    0.6A 200V 1.500 OHM N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD210 Bulk 1,014 329
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    Vishay Siliconix IRFD213

    MOSFET N-CH 250V 450MA 4DIP
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    DigiKey IRFD213 Tube
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    Vishay Siliconix IRFD214

    MOSFET N-CH 250V 450MA 4DIP
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    Find more IRFD21 price and stock on Findchips.com

    IRFD21 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFD210 Intersil 0.6A, 200V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRFD210 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD210 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 600MA 4-DIP Original PDF
    IRFD210 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD210 Harris Semiconductor 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS Scan PDF
    IRFD210 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD210 International Rectifier Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A) Scan PDF
    IRFD210 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD210 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD210 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD210 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, .6A, Pkg Style HEXDIP Scan PDF
    IRFD210 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD210 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRFD210 Motorola Switchmode Datasheet Scan PDF
    IRFD210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD210 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD210 Unknown FET Data Book Scan PDF
    IRFD210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD210 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD210

    Abstract: TB334
    Text: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFD210 TB334 TA17442. IRFD210 TB334

    IRFD210

    Abstract: No abstract text available
    Text: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFD210 TB334 IRFD210

    IRFD214

    Abstract: n mosfet low vgs
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 18-Jul-08 IRFD214 n mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD214_RC, SiHFD214_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD214 SiHFD214 AN609, 25-Oct-10 5141m 6847m 6431m

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95931 IRFD214PbF • Lead-Free Document Number: 91130 10/29/04 www.vishay.com 1 IRFD214PbF Document Number: 91130 www.vishay.com 2 IRFD214PbF Document Number: 91130 www.vishay.com 3 IRFD214PbF Document Number: 91130 www.vishay.com 4 IRFD214PbF Document Number: 91130


    Original     		PDF IRFD214PbF IRFD120 IRFD120

    7105

    Abstract: IRFD120 marking tac
    Text: PD- 95931 IRFD214PbF • Lead-Free www.irf.com 1 10/29/04 IRFD214PbF 2 www.irf.com IRFD214PbF www.irf.com 3 IRFD214PbF 4 www.irf.com IRFD214PbF www.irf.com 5 IRFD214PbF 6 www.irf.com IRFD214PbF www.irf.com 7 IRFD214PbF Hexdip Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFD214PbF IRFD120 7105 IRFD120 marking tac

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 18-Jul-08

    SiHFD210

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD210, SiHFD210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD210, SiHFD210 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD214 08-Mar-07

    IRFD214

    Abstract: SiHFD214
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 18-Jul-08 IRFD214

    SiHFD214

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 18-Jul-08

    SiHFD214

    Abstract: No abstract text available
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054105 T20 ■ 23 HARRIS HAS IRFD210/211/212/213 IRFD21 OR/211R/212R/213R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1991 Features Package 4 -P IN D IP • 0.6A and 0.45A, 1SOV - 200V TOP VIEW • rDS on = 1-5 fl an(l 2-4 fl • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD210/211/212/213 IRFD21 OR/211R/212R/213R IRFD210, IRFD211, IRFD212, IRFD213 IRFD210R, IRFD211R, IRFD212R,

    1RFD210

    Abstract: IRFD210
    Text: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V


    OCR Scan     		PDF IRFD210 1RFD210

    Untitled

    Abstract: No abstract text available
    Text: IRFD210 Semiconductor Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1-500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFD210 1-500i2 TA17442. TB334

    C38 06 DIODE

    Abstract: D82BN2
    Text: IRFD210,211 D82BN2.M2 FIT HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.6 AMPERES


    OCR Scan     		PDF IRFID210 D82BN2 C38 06 DIODE

    IRFD210

    Abstract: diode 3a05 IRFD213
    Text: IRFD210, IRFD213 « I S ilic o n ix J-W in c o rp o ra te d N-Channel Enhancement Mode Transistors "'Z°i-OS 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY PART NUMBER V(BR|DSS fDS(ON) (n> Id (A) 1RFD210 200 1.5 0.60 IRFD213 150 2.4 0.45 1 Œ s 2 CC


    OCR Scan     		PDF IRFD210, IRFD213 O-250) 1RFD210 IRFD213 IRFD210 diode 3a05

    IRFD

    Abstract: IRFD210 D210 IRFD211 IRFD212 IRFD213
    Text: Standard Power MOSFETs- IRFD210, IRFD211, IRFD212, IRFD213 File Number 2316 Power M O S Field-Effect Transistore N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistore 0.45 A and 0.6 A, 150 V - 200 V


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 92CS-33741 IRFD213 IRFD IRFD210 D210 IRFD211 IRFD212

    relay ras 1210

    Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
    Text: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRFD210R, IRFD211R, IRFD212R, IRFD213R 50V-200V 2CS-42CSÂ IRFD212R IRFD213R relay ras 1210 tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R 03a s4

    TB334

    Abstract: IRFD210 IRFD211 IRFD212 IRFD213 rfd2
    Text: i H A R R IRFD210, IRFD211, IRFD212, IRFD213 i s s e m i c o n d u c t o r 0.6A and 0.45A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.6A and 0.45A, 150V and 200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		PDF IRFD210, IRFD211, IRFD212, IRFD213 TB334 TB334 IRFD210 IRFD211 IRFD212 IRFD213 rfd2

    irfd211

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IR FD 210 IRFD211 IRFD212 IRFD213 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 1.5 O HM 200 VOLTS T h e s e T M O S F E T s a r e d e s ig n e d f o r lo w v o lt a g e , h ig h


    OCR Scan     		PDF IRFD211 IRFD212 IRFD213