Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFD212, Search Results

    IRFD212, Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFD212 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRFD212 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD212 Harris Semiconductor 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS Scan PDF
    IRFD212 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD212 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD212 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD212 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD212 Unknown FET Data Book Scan PDF
    IRFD212 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD212 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD212(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD212R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD212R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFD212R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFD212, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD212

    Abstract: IRFD213
    Text: Ftmr IRFD212,213 HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.45 AMPERES 200,150 VOLTS


    OCR Scan
    PDF 00A/aà IRFD212 IRFD213