IRFD210
Abstract: diode 3a05 IRFD213
Text: IRFD210, IRFD213 « I S ilic o n ix J-W in c o rp o ra te d N-Channel Enhancement Mode Transistors "'Z°i-OS 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY PART NUMBER V(BR|DSS fDS(ON) (n> Id (A) 1RFD210 200 1.5 0.60 IRFD213 150 2.4 0.45 1 Œ s 2 CC
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IRFD210,
IRFD213
O-250)
1RFD210
IRFD213
IRFD210
diode 3a05
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1RFD210
Abstract: IRFD210
Text: International [rag Rectifier PD-9.386G IRFD210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements V d ss = 2 0 0 V
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IRFD210
1RFD210
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FD213
Abstract: No abstract text available
Text: 3 ] H A R R I S ÎR F D 2 1 0 /2 1 1 /2 1 2 /2 1 3 IR F D 2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP TOP VIEW • 0.6A and 0.45A, 150V - 200V • rDS on = 1-5 fl and 2-4 n
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1RFD213
FD213
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1RFD120
Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Text: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode
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IRFD210
IRFD211
IRFD212
IRFD213
I0I01Â
1RFD120
6ati
T3B diode
2s4 4pin
XSTR
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