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STMicroelectronics IRF630 MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630	Tube	12,546		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.57475 10000 $0.57475	Buy Now
Avnet Americas	IRF630	Bulk		53 Weeks, 3 Days	1	1 $1.35 10 $1.35 100 $1.04 1000 $0.721 10000 $0.678	Buy Now
	IRF630	Tube		26 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.58417	Buy Now
Mouser Electronics	IRF630		1,268			1 $1.49 10 $0.763 100 $0.69 1000 $0.574 10000 $0.574	Buy Now
Newark	IRF630	Bulk	1		1	1 $1.64 10 $1.35 100 $1.04 1000 $0.721 10000 $0.646	Buy Now
STMicroelectronics	IRF630		1,268		1	1 $1.46 10 $0.75 100 $0.68 1000 $0.57 10000 $0.57	Buy Now

Quest Components	IRF630		84			1 $0.75 10 $0.625 100 $0.5 1000 $0.5 10000 $0.5	Buy Now
	IRF630		80			1 $1.25 10 $1.25 100 $0.625 1000 $0.625 10000 $0.625	Buy Now
	IRF630		16			1 $1.33 10 $1.064 100 $1.064 1000 $1.064 10000 $1.064	Buy Now
TME	IRF630		189		1	1 $1.377 10 $1.235 100 $0.934 1000 $0.68 10000 $0.516	Buy Now
Avnet Silica	IRF630		3,050	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	IRF630		700	27 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRF634PBF MOSFET N-CH 250V 8.1A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF634PBF	Tube	6,306		1	1 $1.98 10 $1.98 100 $1.98 1000 $0.70588 10000 $0.70588	Buy Now
Vishay Siliconix IRF630PBF MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630PBF	Tube	5,239		1	1 $1.66 10 $1.66 100 $1.66 1000 $0.55075 10000 $0.55075	Buy Now
RS	IRF630PBF	Bulk			1,000	1 - 10 - 100 - 1000 $1.17 10000 $1.17	Get Quote
New Advantage Corporation	IRF630PBF		7,050		1	1 - 10 - 100 $0.5302 1000 $0.5302 10000 $0.5302	Buy Now
Infineon Technologies AG IRF630NPBF MOSFET N-CH 200V 9.3A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630NPBF	Tube	4,744		1	1 $1.66 10 $1.66 100 $1.66 1000 $0.50803 10000 $0.42288	Buy Now
Avnet Americas	IRF630NPBF	Tube	3,390	8 Weeks	1	1 $0.39184 10 $0.39184 100 $0.39184 1000 $0.39184 10000 $0.39184	Buy Now
	IRF630NPBF	Bulk		16 Weeks, 4 Days	1	1 $1.18 10 $0.773 100 $0.703 1000 $0.512 10000 $0.512	Buy Now
Mouser Electronics	IRF630NPBF		4,108			1 $1.21 10 $0.723 100 $0.671 1000 $0.446 10000 $0.422	Buy Now
Newark	IRF630NPBF	Bulk	227		1	1 $0.404 10 $0.404 100 $0.404 1000 $0.37 10000 $0.37	Buy Now
Rochester Electronics	IRF630NPBF		1,545		1	1 $0.4604 10 $0.4604 100 $0.4328 1000 $0.3913 10000 $0.3913	Buy Now

TME	IRF630NPBF		300		1	1 $0.84 10 $0.453 100 $0.404 1000 $0.358 10000 $0.317	Buy Now
Ameya Holding Limited	IRF630NPBF		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	IRF630NPBF		1,508			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	IRF630NPBF	Tube	11,874			1 - 10 $0.281 100 $0.185 1000 $0.185 10000 $0.185	Buy Now
EBV Elektronik	IRF630NPBF		93,000	9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF630NPBF		74,000		1	1 - 10 - 100 - 1000 $0.9177 10000 $0.9177	Buy Now
Win Source Electronics	IRF630NPBF		36,150			1 - 10 - 100 - 1000 $0.2 10000 $0.1715	Buy Now
Wuhan P&S	IRF630NPBF		1,000		1	1 $0.53 10 $0.53 100 $0.44 1000 $0.38 10000 $0.38	Buy Now
Vishay Siliconix IRF630STRLPBF MOSFET N-CH 200V 9A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF630STRLPBF	Cut Tape	1,233		1	1 $2.42 10 $1.558 100 $2.42 1000 $2.42 10000 $2.42	Buy Now
	IRF630STRLPBF	Digi-Reel	1,233		1	1 $2.42 10 $1.558 100 $2.42 1000 $2.42 10000 $2.42	Buy Now
	IRF630STRLPBF	Reel	800		800	1 - 10 - 100 - 1000 $0.8044 10000 $0.68375	Buy Now
New Advantage Corporation	IRF630STRLPBF		10,400		1	1 - 10 - 100 - 1000 $0.5138 10000 $0.5138	Buy Now

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IRF63 Datasheets (260)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF630	Fairchild Semiconductor	9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs	Original	PDF
IRF630	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF630	Intersil	9A, 200V, 0.400 ?, N-Channel Power MOSFETs	Original	PDF
IRF630	Philips Semiconductors	N-Channel TrenchMOS Transistor	Original	PDF
IRF630	STMicroelectronics	N-CHANNEL 200V - 0.35 ? - 9A - TO-220-TO220-FP	Original	PDF
IRF630	STMicroelectronics	N-Channel 200V - 0.35W - 9A - TO-220-FP MESH OVERLAY MOSFET	Original	PDF
IRF630	STMicroelectronics	N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET	Original	PDF
IRF630	STMicroelectronics	N-channel 200V - 0.35 Ohm - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET	Original	PDF
IRF630	Temic Semiconductors	8-bit CMOS Microcontroller 0-60 MHz	Original	PDF
IRF630	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF630	Transys Electronics	Power MOSFET	Original	PDF
IRF630	Fairchild Semiconductor	N-Channel Power MOSFETs, 12A, 150-200 V	Scan	PDF
IRF630	FCI	POWER MOSFETs	Scan	PDF
IRF630	Frederick Components	Power MOSFET Selection Guide	Scan	PDF

IRF630	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF630	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.	Scan	PDF
IRF630	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF630	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)	Scan	PDF
IRF630	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF630	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, 200V, 9A, Pkg Style TO220AB	Scan	PDF

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IRF63 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF634 Abstract: IRF634FP Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3	Original	IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP	PDF
IRF630M Abstract: IRF630MFP Text: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	IRF630M IRF630MFP O-220/TO-220FP IRF630FPM O-220 O-220 O-220FP IRF630M IRF630MFP	PDF
Untitled Abstract: No abstract text available Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω	Original	IRF634N IRF634NS IRF634NL O-220 08-Mar-07	PDF
ISL 2651 Abstract: 630n Text: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER	Original	IRF630N/IRF630NS/IRF630NL O-263 O-262 O-220 100oC, ISL 2651 630n	PDF
TA17412 Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL	PDF
IRF1010 Abstract: IRF634N IRF634NL IRF634NS 1403X Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET	Original	IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 12-Mar-07 IRF1010 IRF634N IRF634NL IRF634NS 1403X	PDF
IRF630PBF Abstract: No abstract text available Text: PD- 95916 IRF630PbF Lead-Free Document Number: 91031 9/27/04 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031	Original	IRF630PbF 12-Mar-07 IRF630PBF	PDF
irf630 Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A	Original	IRF630, IRF630S IRF630 O220AB) IRF630S OT404 irf630 smd transistor transistor IRF630 irf630 philips	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF630 MOSFET N-Channel TO-220 1. GATE FEATURES 2. DRAIN 3. SOURCE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units ID @TC=25℃ Continuous Drain Current, VGS @ 10 V	Original	O-220 IRF630 O-220	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN	Original	O-220 IRF630 O-220	PDF
IRF634N Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3 Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology	Original	IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 IRF634N IRF634NL IRF634NS SiHF634N-E3 SiHF634NS-E3	PDF
Untitled Abstract: No abstract text available Text: ^s.nii-donaucto'L L/^ioaueti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630B 0( 2) DESCRIPTION • Drain Current -ID= 9A@ TC=25°C • Drain Source Voltage: VDss= 200V(Min)	Original	IRF630B	PDF
Untitled Abstract: No abstract text available Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF630S, SiHF630S 2002/95/EC O-263) 11-Mar-11	PDF
IRF630SPBF Abstract: 95118 Text: PD - 95118 IRF630SPbF • Lead-Free www.irf.com 1 3/17/04 IRF630SPbF 2 www.irf.com IRF630SPbF www.irf.com 3 IRF630SPbF 4 www.irf.com IRF630SPbF www.irf.com 5 IRF630SPbF 6 www.irf.com IRF630SPbF D2Pak Package Outline Dimensions are shown in millimeters inches	Original	IRF630SPbF EIA-418. IRF630SPBF 95118	PDF

Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21	Original	IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRF630 Abstract: TD 1409 Text: IRF630 Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D Drain G S Gate Drain Source N Channel ELECTRICAL CHARACTERISICS at Parameter Symbol Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Value Test Conditions Symbol	Original	IRF630 -20VDC 160VDC, 20VDC 10VDC, O-220-AB IRF630 TD 1409	PDF
IRF630S Abstract: No abstract text available Text: IRF630S Power MOSFET VDSS = 200V, RDS on = 0.40 ohm, ID = 9.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate Charge QGS Gate to Drain Charge QGD Input Capacitance CISS	Original	IRF630S 160VDC, 10VDC 25VDC, 100VDC, IRF630S	PDF
CMD8 Abstract: No abstract text available Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)	OCR Scan	DD3711b T-39-01 CMD8	PDF
irf630 Abstract: RD161 Text: PD-9.3091 International S Rectifier IRF630 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 -4 0 Í2 l D = 9 .0 A Description DATA	OCR Scan	IRF630 O-220 irf630 RD161	PDF
SEC irf630 Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630 Text: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	TT70S7Û IRF630 IRF631 IRF632 IRF633 IRF633 O-220 SEC irf630 IRF630 SEC for IRF630	PDF
IRF630R Abstract: IRF633R rf630 IRF631R IRF632R Text: Rugged Pow er M O S F E T s - IRF630R, IRF631R, IRF632R, IRF633R F ile N u m b e r 1990 Avalanche Energy Rated N-Channel Power MOSFETs 8.0A and 9.0A, 150V-200V rDs on = 0.40 and 0.60 N -C H A N N EL E N H A N C EM EN T M O D E D Features:	OCR Scan	IRF630R, IRF631R, IRF632R, IRF633R 50V-200V 92CS-4ZCS8 IRF632R IRF633R IRF630R rf630 IRF631R	PDF
Untitled Abstract: No abstract text available Text: IRF630S N - CHANNEL 200V - 0.35Î2 - 9A - D2PAK MESH OVERLAY MOSFET TYPE V IR F 630 S • . . . . . dss 200 V R d S o i i < 0 .4 0 Q. Id 9 A TYPICAL R D S (on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	OCR Scan	IRF630S O-263	PDF
Untitled Abstract: No abstract text available Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	IRF630, RF1S630SM 400i2	PDF
IRF634S Abstract: No abstract text available Text: IRF634S A d v a n c e d Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45Î1 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	IRF634S IRF634S	PDF

IRF63 Search Results

IRF63 Price and Stock

STMicroelectronics IRF630

Vishay Siliconix IRF634PBF

Vishay Siliconix IRF630PBF

Infineon Technologies AG IRF630NPBF

Vishay Siliconix IRF630STRLPBF

IRF63 Datasheets (260)

IRF63 Datasheets Context Search

IRF634

IRF630M

Untitled

ISL 2651

TA17412

IRF1010

IRF630PBF

irf630

Untitled

Untitled

IRF634N

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Untitled

IRF630SPBF

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IRF630

IRF630S

CMD8

irf630

SEC irf630

IRF630R

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IRF634S