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    IRF634S Price and Stock

    Vishay Siliconix IRF634S

    MOSFET N-CH 250V 8.1A D2PAK
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    DigiKey IRF634S Tube
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    Vishay Siliconix IRF634SPBF

    MOSFET N-CH 250V 8.1A D2PAK
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    DigiKey IRF634SPBF Tube
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    Vishay Siliconix IRF634STRLPBF

    MOSFET N-CHANNEL 250V
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    DigiKey IRF634STRLPBF Reel 800
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    Vishay Siliconix IRF634STRRPBF

    MOSFET N-CH 250V 8.1A D2PAK
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    DigiKey IRF634STRRPBF Reel 800
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    IRF634STRRPBF Digi-Reel 1
    • 1 $2.09
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    IRF634STRRPBF Cut Tape 1
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    Vishay Intertechnologies IRF634STRLPBF

    Trans MOSFET N-CH 250V 8.1A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF634STRLPBF)
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    Avnet Americas IRF634STRLPBF Reel 12 Weeks 800
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    TTI IRF634STRLPBF Reel 800
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    Find more IRF634S price and stock on Findchips.com

    IRF634S Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF634S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF634S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634S Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF634S International Rectifier HEXFET Power Mosfet Scan PDF
    IRF634S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634STRL International Rectifier 250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
    IRF634STRL International Rectifier HEXFET Power MOSFET Scan PDF
    IRF634STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634STRLPBF Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 250V Original PDF
    IRF634STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF
    IRF634STRR International Rectifier 250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Scan PDF
    IRF634STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634STRRPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A D2PAK Original PDF

    IRF634S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 18-Jul-08

    AN609

    Abstract: IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634S SiHF634S AN609, 6863m 8651m 0259m 9396m 3890m 1419m 6299m AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    4538

    Abstract: AN609 IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634S SiHF634S AN609, 12-Mar-10 4538 AN609

    SiHF634S

    Abstract: smd e3a IRF634S SiHF634S-E3 SMD-220 SMD DIODE marking AB
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF634S, SiHF634S SMD-220 SMD-220 18-Jul-08 smd e3a IRF634S SiHF634S-E3 SMD DIODE marking AB

    smd diode marking 51

    Abstract: diode smd marking 51 SiHF634S
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF634S, SiHF634S SMD-220 12-Mar-07 smd diode marking 51 diode smd marking 51

    IRF634S

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF634S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRF634S IRF634S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95541 IRF634SPbF • Lead-Free SMD-220 Document Number: 91035 7/21/04 www.vishay.com 1 IRF634SPbF Document Number: 91035 www.vishay.com 2 IRF634SPbF Document Number: 91035 www.vishay.com 3 IRF634SPbF Document Number: 91035 www.vishay.com 4 IRF634SPbF


    Original     		PDF IRF634SPbF SMD-220 08-Mar-07

    1047 diode

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1047 diode

    SMD-220

    Abstract: IRF634SPBF
    Text: PD - 95541 IRF634SPbF • Lead-Free SMD-220 Document Number: 91035 7/21/04 www.vishay.com 1 IRF634SPbF Document Number: 91035 www.vishay.com 2 IRF634SPbF Document Number: 91035 www.vishay.com 3 IRF634SPbF Document Number: 91035 www.vishay.com 4 IRF634SPbF


    Original     		PDF IRF634SPbF SMD-220 12-Mar-07 SMD-220 IRF634SPBF

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    k 1542

    Abstract: IRF634SPBF
    Text: PD - 95541 IRF634SPbF • Lead-Free SMD-220 www.irf.com 1 7/21/04 IRF634SPbF 2 www.irf.com IRF634SPbF www.irf.com 3 IRF634SPbF 4 www.irf.com IRF634SPbF www.irf.com 5 IRF634SPbF 6 www.irf.com IRF634SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations


    Original     		PDF IRF634SPbF SMD-220 EIA-418. k 1542 IRF634SPBF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    CS51220

    Abstract: MMSD4148T1 MMSZ5239BT1 IRF634S MBRB2535CTL MMFT1N10E MMSZ5245BT1 MOC213 NCP4414 MTB20N20E
    Text: CS51220DEMO/D Demonstration Note for CS51220 36 V–72 V Dual DC–DC Converter 5 V/5 A and 3.3 V/5 A Output, Featuring the CS51220 Feed–Forward Voltage Mode PWM Controller with Programmable Phase Delay Synchronization http://onsemi.com DEMONSTRATION NOTE


    Original     		PDF CS51220DEMO/D CS51220 CS51220 r14525 MMSD4148T1 MMSZ5239BT1 IRF634S MBRB2535CTL MMFT1N10E MMSZ5245BT1 MOC213 NCP4414 MTB20N20E

    LL110

    Abstract: IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024
    Text: International Rectifier Existing Product The HEXFET SMD Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months Potential products no current plans. see bus.mgmt. Dual SO-8 SOT-223 DPak Effective 14 June, 1999


    Original     		PDF IRF7233 IRF7220 OT-223 IRLML2402 IRF7501/7 IRLMS1902 IRF7210 -400V IRF840S* IRF830S* LL110 IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024

    MARKING SMD transistor R44

    Abstract: No abstract text available
    Text: Back CS51220 Feed Forward Voltage Mode PWM Controller with Programmable Synchronization http://onsemi.com CS51220 is a single output PWM Controller with switching frequency up to 500 kHz. The feed forward voltage mode control provides excellent line regulation for wide input range. This PWM


    Original     		PDF CS51220 r14525 CS51220/D MARKING SMD transistor R44

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    IRF634S

    Abstract: No abstract text available
    Text: IRF634S A d v a n c e d Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45Î1 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S IRF634S

    Untitled

    Abstract: No abstract text available
    Text: IRF634S A d van ced Power MOSFET FEATURES - 250 V ♦ Rugged Gate Oxide Technology ^ D S o n = 0.45Q ♦ Lower Input Capacitance lD = 8.1 A B ^D S S ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S

    Untitled

    Abstract: No abstract text available
    Text: IRF634S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 8 .1 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1005 International ioR R ectifier IRF634S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		PDF IRF634S SMD-220 SMD-220 D-6380

    045-CI

    Abstract: DIODE rj 81a 7z mosfet AN-994 IRF634S SMD-220 SMD 81A diode 81a smd
    Text: PD-9.1005 International [rag Rectifier IRF634S HEXFET P ow er M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 2 5 0 V


    OCR Scan     		PDF IRF634S SMD-220 caIRF634S 045-CI DIODE rj 81a 7z mosfet AN-994 IRF634S SMD 81A diode 81a smd