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    HY51V64400 Search Results

    HY51V64400 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY51V64400A Hyundai 16Mx4, Fast Page mode Original PDF

    HY51V64400 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HY51V64400HG 16M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The


    Original
    PDF HY51V64400HG 64Mbit 400mil 32pin

    16mx4

    Abstract: HY51V64400A
    Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


    Original
    PDF HY51V64400A HY51V65400A 16Mx4, 128ms cycle/64ms) 16Mx4 10/Sep

    Untitled

    Abstract: No abstract text available
    Text: HY51V64400,HY51V65400 16Mx4, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


    Original
    PDF HY51V64400 HY51V65400 16Mx4, 16Mx4

    HY51V64400A

    Abstract: No abstract text available
    Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


    Original
    PDF HY51V64400A HY51V65400A 16Mx4, 128ms cycle/64ms) 16Mx4

    Untitled

    Abstract: No abstract text available
    Text: HY51V64400HG 1SMx4,3.3V, 8K Ref, FP DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The advanced circuit and process allow this device to achieve high performance and low power dissipation,


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    PDF HY51V64400HG 64Mbit 16Mx4, 400mil 32pin

    v64_5

    Abstract: 51V65400 HY51V65400
    Text: “HYUNDAI HY51V64400, HY51V65400 _16M x 4-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


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    PDF HY51V64400, HY51V65400 HY51V64400JC HY51V64400LJC HY51V64400SLJC HY51V64400TC HY51V64400SLTC HY51V65400JC HY51V65400LJC v64_5 51V65400 HY51V65400

    Untitled

    Abstract: No abstract text available
    Text: HY51V64400 Series •HYUNDAI 16Mx 4-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64400 is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V64400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V64400 HY51V64400 A0-A12* 1AF02-00-M

    Untitled

    Abstract: No abstract text available
    Text: ♦ HY51V64400, HY51V65400 « « rU M D /ll > 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CM OS DRAM s. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    PDF HY51V64400, HY51V65400 16Mx4,

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V64400 Series 16Mx 4-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64400 is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V64400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY51V64400 1AF02-00-MAY95

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V64400, HY51V65400 16Mx4, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow


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    PDF HY51V64400, HY51V65400 16Mx4, 0-A12) 16Mx4

    S5400A

    Abstract: RO3035
    Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    PDF V64400A V65400A 16Mx4, 128ms cycle/64ms) S5400A RO3035

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


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    PDF 256Kx4-bit, 1MX16BIT 16MX1

    Untitled

    Abstract: No abstract text available
    Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns


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    PDF 8Mx72 7738280CTG A6V8730E18H 71V65800Cx9 HY51V 65803HG 71V64403C 71V65403C 65403HG

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


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    PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    edo ram 4Mx16

    Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP


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    PDF 16M-bit 16400C 17400C 16403C 17403C 16400HG edo ram 4Mx16 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


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    PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ