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    Untitled

    Abstract: No abstract text available
    Text: HY51V64400,HY51V65400 16Mx4, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    PDF HY51V64400 HY51V65400 16Mx4, 16Mx4

    v64_5

    Abstract: 51V65400 HY51V65400
    Text: “HYUNDAI HY51V64400, HY51V65400 _16M x 4-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


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    PDF HY51V64400, HY51V65400 HY51V64400JC HY51V64400LJC HY51V64400SLJC HY51V64400TC HY51V64400SLTC HY51V65400JC HY51V65400LJC v64_5 51V65400 HY51V65400

    Untitled

    Abstract: No abstract text available
    Text: ♦ HY51V64400, HY51V65400 « « rU M D /ll > 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CM OS DRAM s. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    PDF HY51V64400, HY51V65400 16Mx4,

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


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    PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V64400, HY51V65400 16Mx4, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow


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    PDF HY51V64400, HY51V65400 16Mx4, 0-A12) 16Mx4

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ