HY5141OOA Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ,ï l l u n , . HY5141OOA Series >79 I U N U n I 4M x 1-blt CMOS DRAM DESCRIPTION The HY5141 OOA is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY5141 OOA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY5141OOA HY5141 HY51410QA such1380 1AC06-30-MAY94 HY514100A HY514100AJ HY514100AU HY514100AT	PDF
Untitled Abstract: No abstract text available Text: H Y C 5 3 6 4 1 0 • • H Y U N D A I S e r i e s 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in	OCR Scan	4Mx36 HYC536410 HY5117400ASLTand HY5141OOALT x36/18 50fla 1MC04-01-FEB95 0004DSB HYC536410-Series	PDF
jeida dram 88 pin Abstract: No abstract text available Text: 'HYUNDAI HYC536410 Series 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in	OCR Scan	HYC536410 4Mx36 HY5117400ASLTand HY5141OOALT x36/18 1MC04-01-FEBB5 HYC536410-Series 1MC04-01-FEB95 jeida dram 88 pin	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT	PDF
HYM532810 Abstract: HY5117400 HYM53 Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,	OCR Scan	HYM532810 32-blt 32-bit HY5117400 HYM532810M/LM HYM532810MG/LMG 1CF02-10-JUN94 4b75D 0D03577 HYM53	PDF
U5SB Abstract: 1621-B AY83 Text: •HYUNDAI SEMICONDUCTOR HYM584000A Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CM O S DRAM module consisting of eight HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.	OCR Scan	HYM584000A HY514100A HYM584000AM/ALM 1BC03-10-M 005f0 061MAX. U5SB 1621-B AY83	PDF
HY514100A Abstract: 512Kx1+DRAM Text: HYUNDAI HY514100A Series SEMICONDUCTOR 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY514100A HY5141OOA 1AC06-20-APR93 HY514100AJ HY514100AU HY51410QAT HY514100ALT 512Kx1+DRAM	PDF
Untitled Abstract: No abstract text available Text: HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY514100A Schot0300 1AC06-30-MAY94 D002U0Q HY514100AJ HY514100AU	PDF
r4kf Abstract: HY53C464LS fr4k HY53C256LS HY531000J Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S	OCR Scan	256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J	PDF
Untitled Abstract: No abstract text available Text: H Y U ND A I HYM536400A Series SEMICONDUCTOR 4M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each	OCR Scan	HYM536400A 36-bit HY514100A HYM536400AM/ALM HYM536400AMG/ALMG 198-OmW power23	PDF
HY51V18164 Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC	OCR Scan	256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ	PDF