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    BUZ21 Search Results

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    BUZ21 Price and Stock

    Rochester Electronics LLC BUZ21

    MOSFET N-CH 100V 21A TO220AB
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    DigiKey BUZ21 Tube 42,977 204
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    Renesas Electronics Corporation BUZ21

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    Renesas Electronics Corporation BUZ21P2

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    Siemens BUZ21L

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    Bristol Electronics BUZ21L 444 3
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    Quest Components BUZ21L 2,091
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    BUZ21L 75
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    ComSIT USA BUZ21L 239
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    Siemens BUZ21

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    Bristol Electronics BUZ21 9 3
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    BUZ21 7
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    Chip 1 Exchange BUZ21 1,156
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    BUZ21 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUZ21 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    BUZ21 Infineon Technologies Power MOSFET, 100V, TO-220, RDSon=0.085 ?, 21A, NL Original PDF
    BUZ21 Intersil 19A, 100V, 0.100 ?, N-Channel Power MOSFET Original PDF
    BUZ21 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ21 Siemens Original PDF
    BUZ21 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ21 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ21 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    BUZ21 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ21 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ21 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUZ21 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ21 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ21 Semelab MOS Power Transistor Scan PDF
    BUZ21 Siemens Power Transistors Scan PDF
    BUZ21 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    BUZ21 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BUZ21 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan PDF
    BUZ210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ210 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    BUZ21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ211

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ211 BUZ211

    Untitled

    Abstract: No abstract text available
    Text: BUZ21L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)10 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF BUZ21L

    Untitled

    Abstract: No abstract text available
    Text: BUZ216 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)4.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF BUZ216

    buz210

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ210 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ210 buz210

    BUZ21

    Abstract: TA9854 TB334
    Text: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as


    Original     		PDF BUZ21 BUZ21) TA9854. BUZ21 TA9854 TB334

    Untitled

    Abstract: No abstract text available
    Text: BUZ211 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF BUZ211

    Untitled

    Abstract: No abstract text available
    Text: BUZ213 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)8.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)83 Minimum Operating Temp (øC)


    Original     		PDF BUZ213

    Untitled

    Abstract: No abstract text available
    Text: BUZ214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)83 Minimum Operating Temp (øC)


    Original     		PDF BUZ214

    Untitled

    Abstract: No abstract text available
    Text: BUZ215 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF BUZ215

    BUZ21

    Abstract: No abstract text available
    Text: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE


    OCR Scan     		PDF SS4735 BUZ21 O-220AB QQ14bQQ BUZ21

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E

    BUZ21

    Abstract: No abstract text available
    Text: BUZ21 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 19A, 100V • rDS on) = 0.1 f l • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF BUZ21 BUZ21

    BUZ21

    Abstract: bt 109 transistor BUZ21 L T0220AB
    Text: N AMER PHILIPS/DISCRETE ! ObE D btiSBT31 D01MM23 T " PowerMOS transistor BUZ21 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,


    OCR Scan     		PDF btiSBT31 D01MM23 BUZ21 T0220AB; fab53Ã T-39-11 BUZ21 bt 109 transistor BUZ21 L T0220AB

    Untitled

    Abstract: No abstract text available
    Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter


    OCR Scan     		PDF BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    BUZ21

    Abstract: No abstract text available
    Text: / = T S G S -T H O M S O N * 7 # » » itL IIC T ß Ä O tg S B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Dss BUZ21 100 V ^D S on 0.1 fi 19 A • 100 VO LTS - FOR DC/DC CO NVERTERS • HIGH CURRENT • RATED FOR UNCLAM PED INDUCTIVE


    OCR Scan     		PDF BUZ21 BUZ21

    BUZ10A

    Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
    Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B


    OCR Scan     		PDF D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23

    BUZ21

    Abstract: schematic diagram UPS din 40040 humidity
    Text: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING


    OCR Scan     		PDF BUZ21 BUZ21 O-220 schematic diagram UPS din 40040 humidity

    BUZ21

    Abstract: c0074
    Text: SGS-THOMSON HUKêirMDÊi BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A


    OCR Scan     		PDF BUZ21 C-0074 c0074

    buz21

    Abstract: transistor 643
    Text: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils


    OCR Scan     		PDF BUZ21 156x156 15x19 MC-0074 transistor 643

    buz21

    Abstract: as58
    Text: S G S -T H O M S O N w BUZ21 u r n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 . . . . . . V R d s o h dss 100 V j 0.1 Là Id 21 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C LOW GATE CHARGE


    OCR Scan     		PDF BUZ21 O-220 buz21 as58

    BUZ211

    Abstract: 30VN IEC134
    Text: BUZ211 PowerMOS transistor N AMER P H I L I P S /D I S CR ET E ObE D ^ 53=131 0014bbö 7 I T - 2 1 -1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage metal envelope.


    OCR Scan     		PDF BUZ211 0014bbà T-21-13 0014L7M T-39-13 BUZ211 30VN IEC134

    Untitled

    Abstract: No abstract text available
    Text: _ • 7 T E T 2 3 7 O O M S bG ? Sbb ■ S 6 T H _ fZ 7 SCS-THOMSON IM g^ i[L[iO¥[RMDOS B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 ■ . . . ■ ■ . V dss R D S (on Id 100 V < 0.1 n 21 A TYPICAL RDS(on) = 0.09 Q.


    OCR Scan     		PDF BUZ21

    Untitled

    Abstract: No abstract text available
    Text: _ 30E 1 C T • QQ30122 b ■ / ' p j v t j S G S -T H O M S O N _ S 6 S-ThOMSON ^7# M I^ dLi©¥[^®[i^D©i) ' BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al


    OCR Scan     		PDF QQ30122 BUZ21

    BUZ211

    Abstract: No abstract text available
    Text: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.


    OCR Scan     		PDF BUZ211 T-si-13 bbS3131 D014b T-39-13 BUZ211_ 0014b74 BUZ211