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    BUZ21

    Abstract: TA9854 TB334
    Text: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as


    Original     		BUZ21 BUZ21) TA9854. BUZ21 TA9854 TB334 PDF

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    Abstract: No abstract text available
    Text: BUZ21 Semiconductor Data Sheet October 1998 19A, 100 V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


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