BDT85 Search Results

BDT85 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
BDT85	Philips Semiconductors	Silicon Power Transistors	Original	PDF
BDT85	Magnatec	NPN Epitaxial Base Transistors in a TO-220 Plastic Package	Scan	PDF
BDT85	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT85	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT85	Philips Semiconductors	SILICON POWER TRANSISTORS	Scan	PDF
BDT85F	Philips Semiconductors	Silicon Epitaxial Power Transistors	Original	PDF
BDT85F	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDT85F	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BDT85F	Philips Semiconductors	SILICON EPITAXIAL POWER TRANSISTORS	Scan	PDF

BDT85 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDT87F Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F	Original	BDT81F/83F/85F/87F BDT81F; BDT83F; BDT85F; BDT87F BDT82F/84F/86F/88F BDT81F BDT83F BDT87F NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536	PDF
BDT85 Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87	Original	BDT81/83/85/87 BDT81; BDT83; BDT85; BDT87 BDT82/84/86/88 BDT81 BDT83 BDT85 BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83	PDF
BDT86 equivalent Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor Text: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.	Original	BDT82 BDT84 BDT86 BDT88 BDT81 BDT83 BDT85 BDT87 BDT86 equivalent BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
DK53 Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513	PDF
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878	PDF
BDT85 Abstract: LLE16120X potentiometer Sfernice BY239-800 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16120X NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	LLE16120X SCA53 127147/00/02/pp12 BDT85 LLE16120X potentiometer Sfernice BY239-800	PDF
LLE18100X Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES	Original	LLE18100X OT437A LLE18100X MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431	PDF
MAX2136 Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.	OCR Scan	BDT81F; BDT83F BPT85F; BDT87F 0D4331S OT186 BDT82F, BDT84F, BDT86F BDT88F. MAX2136 t331t BDT81F BDT82F BDT83F BDT84F BDT87F BDT88F	PDF
SOT87 Abstract: BDT86 BDT88 BDT81 BDT82 BDT83 BDT84 BDT85 BDT87 l82a Text: / MAGNA BDT81; BDT83 BDT85; BDT87 SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T O -2 2 0 plastic envelope, designed for use in audio output stages and generai am plifier and switching applications. P-N-P complements are B D T 8 2 , B D T 84, B D T86 and BD T88.	OCR Scan	BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. 13H3S SOT87 BDT88 BDT81 BDT82 BDT84 BDT85 BDT87 l82a	PDF
BDT84 Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11 Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT81; BDT83 BDT85; BDT87 00H330b aTO-220 BDT82, BDT84, BDT86 BDT88. BDT84 PHILIPS 1N BDT88 BDT81 BDT82 BDT85 BDT87 10-J11	PDF
Untitled Abstract: No abstract text available Text: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A	OCR Scan	BDT81F; BDT83F BDT85F; BDT87F BDT82F, BDT84F, BDT86F BDT88F. BDT81F bb53T31	PDF
Untitled Abstract: No abstract text available Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS i n t e r n a t i o n a l 5 bE D • 7 1 1 0 fiSh G G 4 3 3 1 S bSi ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.	OCR Scan	BDT81F; BDT83F BDT85F; BDT87F	PDF
BDT88 Abstract: No abstract text available Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT88	PDF

Untitled Abstract: No abstract text available Text: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.	OCR Scan	BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81	PDF
BDT81F Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F Text: BDT81F; BDT83F J l^BDT85F; BDT87F SILICON EPITAXIAL POWER TRANSISTORS N PN silicon epitaxial power transistors, each in a SO T 1 8 6 envelope with an electrically insulated mounting base. PNP complements are B D T 8 2 F , B D T 8 4 F , B D T 8 6 F and BD T88F.	OCR Scan	BDT81F; BDT83F BDT85F; BDT87F OT186 BDT82F, BDT84F, BDT86F BDT88F. BDT81F BDT82F BDT84F BDT85F BDT87F BDT88F	PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
Transistor AND DIODE Equivalent list Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very	OCR Scan	BDT85 BY239800 BY239800; LLE16120X Transistor AND DIODE Equivalent list	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.	OCR Scan	BDT82; BDT84 BDT86; BDT88 O-220 BDT81, BDT83, BDT85 BDT87.	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
diode IN4148 Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list Text: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■	OCR Scan	LXE18300X 00350fll diode IN4148 Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list	PDF
BY239-800 Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides	OCR Scan	LLE16120X OT437A. BY239-800 MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit	PDF
Transistor Equivalent list Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency	OCR Scan	LXE16350X MBC423 OT439A. Transistor Equivalent list diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X	PDF
Transistor Equivalent list Abstract: Transistor AND DIODE Equivalent list capacitor feed-through Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very	OCR Scan	OT439A LXE16350X RA439 Transistor Equivalent list Transistor AND DIODE Equivalent list capacitor feed-through	PDF

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BDT85 Search Results

BDT85 Datasheets (9)

BDT85 Datasheets Context Search

BDT87F

BDT85

BDT86 equivalent

BUV48I

DK53

TRANSISTOR DATASHEET D1555

BDT85

LLE18100X

MAX2136

SOT87

BDT84

Untitled

Untitled

BDT88

Untitled

BDT81F

BPW22A

Transistor AND DIODE Equivalent list

Untitled

transistor f6 13003

diode IN4148

BY239-800

Transistor Equivalent list

Transistor Equivalent list