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    Infineon Technologies AG BCR 112L3 E6327

    TRANS PREBIAS NPN 50V TSLP-3
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    DigiKey BCR 112L3 E6327 Reel 30,000
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    BCR112L3 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BCR112L3 Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR112L3E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSLP-3-4 T/R Original PDF
    BCR112L3E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 Original PDF
    BCR 112L3 E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSLP-3 Original PDF

    BCR112L3 Datasheets Context Search

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    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    WFs transistor

    Abstract: WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23 BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W

    WFs transistor

    Abstract: SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07174 EHA07184 BCR112 BCR112F BCR112L3 BCR112T WFs transistor SOT323 WF BCR112U E6327 BCR112 BCR112F BCR112L3 BCR112T BCR112W infineon marking code B2 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • BCR112U: Two internally isolated transistors with good matching in one multichip package • BCR112U: For orientation in reel see


    Original     		PDF BCR112. BCR112U: BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F

    WFs transistor

    Abstract: WFs SOT23
    Text: BCR112. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR112. BCR112/F/L3 BCR112T/W BCR112U EHA07184 EHA07174 BCR112 BCR112F BCR112L3 BCR112T WFs transistor WFs SOT23