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    BC847S Price and Stock

    Diotec Semiconductor AG BC847S

    BJT SOT-363 45V 100MA
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    DigiKey BC847S Cut Tape 1,485 1
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    BC847S Digi-Reel 1,485 1
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    BC847S Reel 3,000
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    Mouser Electronics BC847S 6,611
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    Onlinecomponents.com BC847S 9,000
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    TME BC847S 8,950 25
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    Chip1Stop BC847S 3,000
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    Master Electronics BC847S 9,000
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    onsemi BC847S

    BJT SOT363 45V NPN 0.25W 150C
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    Avnet Americas BC847S Reel 4 Weeks 3,206
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    Newark BC847S Bulk 3,210
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    Rochester Electronics BC847S 76,203 1
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    Velocity Electronics BC847S 320
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    Rochester Electronics LLC BC847S

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey BC847S Bulk 2,664
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    Infineon Technologies AG BC847SH6359XTMA1

    TRANS 2NPN 45V 0.1A SOT363
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    Infineon Technologies AG BC847SH6827XTSA1

    TRANS 2NPN 45V 0.1A SOT363
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    Find more BC847S price and stock on Findchips.com

    BC847S Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC847S Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BC847S Fairchild Semiconductor NPN Multi-Chip General Purpose Amplifier Original PDF
    BC847S Fairchild Semiconductor NPN Multi-Chip General Purpose Amplifier Original PDF
    BC847S Infineon Technologies NPN Silicon AF Transistor Array for AF input stages and drivers Original PDF
    BC847S Infineon Technologies Dual AF Transistor Arrays for General Purpose Applications Original PDF
    BC847S Infineon Technologies Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; VCEO (max): 45.0 V; VCBO (max): 50.0 V; IC(max): 100.0 mA; ICM (max): 200.0 mA; Original PDF
    BC847S Kexin NPN Multi-Chip General Purpose Amplifier Original PDF
    BC847S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC847S Siemens Cross Reference Guide 1998 Original PDF
    BC847S Siemens NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) Original PDF
    BC847S TY Semiconductor TY Equivalent - NPN Multi-Chip General Purpose Amplifier - SOT-363 Original PDF
    BC847SE6327 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 45V 100MA SOT363 Original PDF
    BC847SE6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 45V 0.1A SOT363 Original PDF
    BC847SE6433 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 45V 100MA SOT363 Original PDF
    BC847SE6433BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 45V 0.1A SOT363 Original PDF
    BC847SH6327 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS AF NPN 45V 100MA SOT363 Original PDF
    BC847SH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 45V 0.1A SOT363 Original PDF
    BC847SH6359 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 45V 100MA SOT363 Original PDF
    BC847SH6359XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 45V 0.1A SOT363 Original PDF
    BC847SH6433 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL NPN 45V 100MA SOT363 Original PDF

    BC847S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 1 E1


    Original     		PDF KC847S BC847S) OT-363

    Untitled

    Abstract: No abstract text available
    Text: JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC847S OT-363 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC847S OT-363 100mA 100MHz

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Nov-29-2001 EHP00365 BC847S VPS05604

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		PDF BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Jul-02-2001 EHP00365 BC847S VPS05604

    BC847S

    Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
    Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier


    Original     		PDF BC847S SC70-6 BC847S CBVK741B019 F63TNR FDG6302P SC70-6

    BC847S

    Abstract: SC70-6
    Text: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)


    Original     		PDF BC847S OT-363 026TYP 65TYP) 021REF 01-Jan-2006 SC70-6 BC847S SC70-6

    Untitled

    Abstract: No abstract text available
    Text: BC847S Dual General Purpose Transistor NPN Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT -363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Unit V V V mA Value


    Original     		PDF BC847S SC-88) BC847S 100MHz) 05-Feb-07 OT-363 OT-363

    Untitled

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5


    Original     		PDF BC847S EHA07178 OT363

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 200 mA ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-363 BC847S OT-363 100mA, 100MHz

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 BC847S VPS05604

    h11e

    Abstract: No abstract text available
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 h11e

    BC847S

    Abstract: SC70-6
    Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier


    Original     		PDF BC847S SC70-6 BC847S SC70-6

    ic7001

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC847S OT-363 ic7001

    BC846U/S

    Abstract: BC846U
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 BC846U/S

    1DS sot363

    Abstract: marking 1DS sot363
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 1DS sot363 marking 1DS sot363

    marking 1DS sot363

    Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846S BC846U EHA07178 marking 1DS sot363 1Ds SOT363 BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs

    Untitled

    Abstract: No abstract text available
    Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier


    Original     		PDF BC847S SC70-6

    marking 1c

    Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
    Text: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max


    Original     		PDF KC847S BC847S) OT-363 marking 1c smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range


    Original     		PDF OT-363 BC847S OT-363 100mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 B1 E1 C2 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier


    Original     		PDF BC847S SC70-6

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. BC847S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRAN SISTO R *Compleiiieit to BC857S ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC847S BC857S 062in 300uS 100mA 200uA 200Hz

    mpsa42 "sot23"

    Abstract: MPSA42 sot-223 siemens bfp22
    Text: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN


    OCR Scan     		PDF BC847S BC847PN BC857S OT363 OT363 OT223 mpsa42 "sot23" MPSA42 sot-223 siemens bfp22