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    A114D Search Results

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    A114D Price and Stock

    OMRON Industrial Automation H7CX-A114D1-N-DC12-24-AC24

    COUNTER LCD 4 CHAR 24V PANEL MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H7CX-A114D1-N-DC12-24-AC24 Bulk 2 1
    • 1 $489.13
    • 10 $489.13
    • 100 $489.13
    • 1000 $489.13
    • 10000 $489.13
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    Siemens 3RE41225AA114DY0

    STARTER,FVNR,S0,3PH,THOLR,24VAC,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3RE41225AA114DY0 Box 1
    • 1 $386.84
    • 10 $386.84
    • 100 $386.84
    • 1000 $386.84
    • 10000 $386.84
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    Mouser Electronics 3RE41225AA114DY0
    • 1 $386.84
    • 10 $386.84
    • 100 $386.84
    • 1000 $386.84
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    RS 3RE41225AA114DY0 Bulk 1
    • 1 $511.08
    • 10 $485.52
    • 100 $459.97
    • 1000 $459.97
    • 10000 $459.97
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    Siemens 3RE41224CA114DF6

    NON-REV MTR STR, FRAME SZ 0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3RE41224CA114DF6 Box 1
    • 1 $702.23
    • 10 $702.23
    • 100 $702.23
    • 1000 $702.23
    • 10000 $702.23
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    RS 3RE41224CA114DF6 Bulk 1
    • 1 $962.13
    • 10 $914.03
    • 100 $865.92
    • 1000 $865.92
    • 10000 $865.92
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    Siemens 3RE41226CA114DB0

    NON-REV MTR STR, FRAME SZ 0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3RE41226CA114DB0 Box 1
    • 1 $791.14
    • 10 $791.14
    • 100 $791.14
    • 1000 $791.14
    • 10000 $791.14
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    RS 3RE41226CA114DB0 Bulk 1
    • 1 $1083.95
    • 10 $1029.75
    • 100 $1029.75
    • 1000 $1029.75
    • 10000 $1029.75
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    Siemens 3RE41223AA114DF6

    NON-REV MTR STR, FRAME SZ 0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3RE41223AA114DF6 Box 1
    • 1 $538.49
    • 10 $538.49
    • 100 $538.49
    • 1000 $538.49
    • 10000 $538.49
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    Mouser Electronics 3RE41223AA114DF6
    • 1 $538.49
    • 10 $538.48
    • 100 $538.48
    • 1000 $538.48
    • 10000 $538.48
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    RS 3RE41223AA114DF6 Bulk 1
    • 1 $711.45
    • 10 $675.88
    • 100 $640.31
    • 1000 $640.31
    • 10000 $640.31
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    Find more A114D price and stock on Findchips.com

    A114D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A114D General Electric Semiconductor Data Book 1971 Scan PDF
    A114D General Electric Semiconductor Data Handbook 1977 Scan PDF
    A114D Harris Semiconductor 1.0A Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF
    A114D Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    A114D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JESD22-A114D

    Abstract: No abstract text available
    Text: DATA BRIEF CY7C68003 MoBL-USB TX2UL USB 2.0 ULPI Transceiver Features • UART Pass Through Mode The Cypress MoBL-USB™ TX2UL is a low voltage high speed HS USB 2.0 ULPI Transceiver. ■ ESD Compliance: ❐ JESD22-A114D 8 kV Contact Human Body Model (HBM) for


    Original     		CY7C68003 JESD22-A114D IEC61000-4-2 20-pin 24-pin PDF

    DP-34

    Abstract: tx2u
    Text: CY7C68003 MoBL-USB TX2UL USB 2.0 ULPI Transceiver Features • UART Pass Through Mode The Cypress MoBL-USB™ TX2UL is a low voltage high speed HS USB 2.0 ULPI Transceiver. ■ ESD Compliance: ❐ JESD22-A114D 8 kV Contact Human Body Model (HBM) for DP, DM, and VSS Pins


    Original     		CY7C68003 JESD22-A114D IEC61000-4-2 20-pin 24-pin DP-34 tx2u PDF

    TX2UL

    Abstract: 943 stp CY7C68003-20FNXI CY7C68003-24LQXI CY7C68003-24LQXIT JESD22-A114 JESD22-A114D 3 phase UPS block diagram
    Text: CY7C68003 MoBL-USB TX2UL USB 2.0 ULPI Transceiver Features • UART Pass Through Mode The Cypress MoBL-USB™ TX2UL is a low voltage high speed HS USB 2.0 ULPI Transceiver. ■ ESD Compliance: ❐ JESD22-A114D 8 kV Contact Human Body Model (HBM) for DP, DM, and VSS Pins


    Original     		CY7C68003 JESD22-A114D IEC61000-4-2 20-pin 24-pin TX2UL 943 stp CY7C68003-20FNXI CY7C68003-24LQXI CY7C68003-24LQXIT JESD22-A114 3 phase UPS block diagram PDF

    TDA8275

    Abstract: 7133h tda8275a SAA7131E tda18271 SAA7135 saa7131e 03 g tda18271 vsync dvb strong power supply circuit diagram nxp saa7131E
    Text: SAA7131E Global standard low-IF demodulator and PCI audio and video decoder for analog TV Rev. 03 — 19 May 2008 Product data sheet 1. General description The SAA7131E combines a digital global standard low-IF demodulator for analog TV with a PCI audio and video decoder.


    Original     		SAA7131E SAA7131E TDA18271, TDA8275A TDA8275 7133h tda18271 SAA7135 saa7131e 03 g tda18271 vsync dvb strong power supply circuit diagram nxp saa7131E PDF

    omron h7cx

    Abstract: Counter Omron H7CX marking a4w a4w transistor A114 pnp a4w 41 diode a4s diode a4W OMRON DIP switch Y92F-30
    Text: Multifunction Counter/Tachometer DIN 48 x 48 H7CX Series CSM_H7CX_DS_E_2_1 DIN 48 x 48 Multifunction Counter/Tachometer with a Bright, Easy-to-view Negative Transmissive LCD. The H7CX Defines a New Standard. • Highly visible display with backlit negative transmissive LCD.


    Original     		PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA801B025F CMPA801B025F CMPA80 1B025F PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band


    Original     		CGHV40030 CGHV40030 CGHV40 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		CGH35015 CGH35015 CGH3501 35015P PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		CGH40006P CGH40006P CGH40006P, CGH40 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		CGH35030F CGH35030F CGH3503 PDF

    CGH40180PP

    Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40180PP CGH40180PP CGH40180PP, CGH4018 CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40180PP CGH40180PP CGH40180PP, CGH4018 PDF

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006 PDF

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB PDF

    STR 6307 POWER

    Abstract: RO4350B STR 6735 470PF CGH4003 CGH40035 CGH40035F CGH40035F-TB CGH40035-TB JESD22
    Text: CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		CGH40035F CGH40035F CGH40035F, CGH4003 CGH40035 STR 6307 POWER RO4350B STR 6735 470PF CGH4003 CGH40035F-TB CGH40035-TB JESD22 PDF

    A114M

    Abstract: A114B A114C A114D
    Text: 7294621 74 P O W E R E X INC D E ~ l? 2 m 5 1 000135=] S f~ r~o3-/jr A114B A114C A114D A114E A114M Fast Recovery Rectifier 200-600 Volts 2.0 Amps THE G E N E R A L ELEC T R IC A114 IS A 2.0 AMPERE, A X IA L -L E A D E D , FAST R E C O V E R Y R EC T IF IER . D U A L H EA T SIN K CO NSTRU CTIO N P R O V ID ES


    OCR Scan     		A114B A114C A114D A114E A114M 80ARD A114M PDF

    A114F

    Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
    Text: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —


    OCR Scan     		1N5059 1N4245-49 1N5624-27 DT230 MPR10-15 A14A-P GER4001 M14A-M DT230F A114F A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF