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    CGH40045 Search Results

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    CGH40045 Price and Stock

    MACOM CGH40045F

    GaN FETs GaN HEMT DC-4.0GHz, 45 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH40045F 100
    • 1 $253.93
    • 10 $239.31
    • 100 $239.26
    • 1000 $239.26
    • 10000 $239.26
    		Buy Now

    MACOM CGH40045P

    GaN FETs 45W, 4.0GHz, 830121P, GaN HEMT, PILL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH40045P
    • 1 $353.56
    • 10 $350.95
    • 100 $350.95
    • 1000 $350.95
    • 10000 $350.95
    		Get Quote

    Cree, Inc. CGH40045F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CGH40045F 4
    • 1 $493.7632
    • 10 $479.6557
    • 100 $479.6557
    • 1000 $479.6557
    • 10000 $479.6557
    		Buy Now
    CGH40045F 2
    • 1 $202.5
    • 10 $202.5
    • 100 $202.5
    • 1000 $202.5
    • 10000 $202.5
    		Buy Now

    CGH40045 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH40045 Cree 45 W, RF Power GaN HEMT Original PDF
    CGH40045F Cree RF FETs, Discrete Semiconductor Products, TRANS 45W RF GAN HEMT 440193 PKG Original PDF
    CGH40045F-AMP Wolfspeed CGH40045F DEV BOARD WITH HEMT Original PDF
    CGH40045F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40045 Original PDF
    CGH40045P Wolfspeed 45W, GAN HEMT, 28V, DC-4.0GHZ, P Original PDF

    CGH40045 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB PDF

    CGH40045

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045F

    Abstract: CGH40045 10UF cree L2
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 CGH40045F 10UF cree L2 PDF

    CGH40045F

    Abstract: CGH40045 ATC100B Cree Microwave 10UF JESD22
    Text: CGH40045F 45 W, RF Power GaN HEMT Cree’s CGH40045F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045F CGH40045F CGH40045F, CGH4004 CGH40045 ATC100B Cree Microwave 10UF JESD22 PDF

    CGH40045

    Abstract: 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    93420

    Abstract: cgh40045f CGH40045 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 93420 cgh40045f 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    CGH40045

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		CGH40045 CGH40045 CGH40045, CGH4004 PDF

    CGH40045-TB

    Abstract: CGH40045
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045-TB PDF

    CGH27060

    Abstract: str 16006 CGH40045F CGH27015 CGH27060F JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		CGH27060F CGH27060F CGH2706 CGH27060 str 16006 CGH40045F CGH27015 JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		CGH27060F CGH27060F CGH2706 PDF

    CGH40045

    Abstract: Mobile WiMAX abstract IC 502 POSTEC cree gan
    Text: A Highly Efficient Doherty Power Amplifier Employing Optimized Carrier Cell Junghwan Moon #1 , Young Yun Woo ∗ , and Bumman Kim #2 # Department of Electrical Engineering, Pohang University of Science and Technology POSTECH , Gyeongbuk, Republic of Korea


    Original     		PDF

    str 16006

    Abstract: 44019
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		CGH27060F CGH27060F CGH2706 str 16006 44019 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		CGH27060F CGH27060F CGH2706 PDF

    cgh40045

    Abstract: str 5 q 0765
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		CGH27060F CGH27060F CGH2706 cgh40045 str 5 q 0765 PDF

    CGH40035FE

    Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT
    Text: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and


    Original     		CGH40035 CGH40035 CGH40035, CGH4003 CGH40035FE STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035F str 765 RT PDF

    GaN ADS

    Abstract: power transistor gan s-band CGH40045 simple circuit diagram of samsung mobile with int Mobile WiMAX abstract SC-10 maek GaN amplifier 100W power amplifier classe d schematic diagram 100w amp schematic diagram
    Text: A Novel Design Method of Highly Efficient Saturated Power Amplifier based on Self-Generated Harmonic Currents Jangheon Kim1,2 , Junghwan Moon1 , Jungjoon Kim1 , Slim Boumaiza2 , and Bumman Kim1 Department of Electrical Engineering, Pohang University of Science and Technology, Gyeongbuk 790-784,


    Original     		PDF

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF