CGH40006P Search Results

CGH40006P Price and Stock

Filter by Manufacturer


MACOM CGH40006P RF MOSFET HEMT 28V 440109
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40006P	Tray	103		1	1 $79.97 10 $65.575 100 $65.575 1000 $65.575 10000 $65.575	Buy Now
Mouser Electronics	CGH40006P		735			1 $78.49 10 $76.36 100 $73.24 1000 $73.24 10000 $73.24	Buy Now
Richardson RFPD	CGH40006P		1,175		1	1 $123.73 10 $123.73 100 $123.73 1000 $123.73 10000 $123.73	Buy Now
MACOM CGH40006P-AMP CGH40006P DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH40006P-AMP	Box	2		1	1 $726.29 10 $726.29 100 $726.29 1000 $726.29 10000 $726.29	Buy Now
Richardson RFPD	CGH40006P-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH40006P Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH40006P		Cree	RF FETs, Discrete Semiconductor Products, TRANS 8W RF GAN HEMT 440109 PKG		Original	PDF
CGH40006P-AMP		Wolfspeed	CGH40006P DEV BOARD WITH HEMT		Original	PDF
CGH40006P-AMP		Wolfspeed	CGH40006P DEV BOARD WITH HEMT		Original	PDF
CGH40006P-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40006P		Original	PDF

CGH40006P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006P CGH40006P, CGH40	PDF
CGH40006P-TB Abstract: RO5880 006P CGH40006P JESD22 CGH40006 Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006	PDF
CGH40006 Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649 Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649	PDF
Untitled Abstract: No abstract text available Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006P CGH40006P, CGH40	PDF
Untitled Abstract: No abstract text available Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006P CGH40006P, CGH40	PDF
CGH40006P Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006P CGH40006P, CGH40 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB	PDF
cgh40006p Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and	Original	CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF