SI9955DY
Abstract: fairchild NDS 1182
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
fairchild NDS
1182
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FDS9953A
Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS9953A
FDS9953A
9953A
CBVK741B019
F011
F63TNR
F852
L86Z
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FDS6688
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6688
FDS6688
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
rca tube 56
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FDS9945
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS9945
FDS9945
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
86 diode
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CBVK741B019
Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.
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FDS3812
CBVK741B019
F011
F63TNR
F852
FDS3812
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6692
CBVK741B019
F011
F63TNR
F852
FDS6692
FDS9953A
L86Z
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fairchild NDS
Abstract: marking w66
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
fairchild NDS
marking w66
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Untitled
Abstract: No abstract text available
Text: Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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Untitled
Abstract: No abstract text available
Text: FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS3601
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Untitled
Abstract: No abstract text available
Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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CBVK741B019
Abstract: F011 F63TNR F852 FDS4501H FDS9953A L86Z
Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate
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FDS4501H
CBVK741B019
F011
F63TNR
F852
FDS4501H
FDS9953A
L86Z
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FDFS2P106A
Abstract: No abstract text available
Text: FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P106A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
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FDFS2P106A
FDFS2P106A
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6678A FDS9953A L86Z
Text: FDS6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6678A
CBVK741B019
F011
F63TNR
F852
FDS6678A
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS3612 FDS9953A L86Z rca 632
Text: FDS3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.4 A, 100 V. RDS ON = 120 mΩ @ VGS = 10 V
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FDS3612
CBVK741B019
F011
F63TNR
F852
FDS3612
FDS9953A
L86Z
rca 632
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F63TNR
Abstract: F852 FDS6576 FDS9953A L86Z CBVK741B019 F011
Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDS6576
F63TNR
F852
FDS6576
FDS9953A
L86Z
CBVK741B019
F011
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6670A FDS6670S FDS9953A L86Z
Text: FDS6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6670S
FDS6670S
CBVK741B019
F011
F63TNR
F852
FDS6670A
FDS9953A
L86Z
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MOSFET and parallel Schottky diode
Abstract: CBVK741B019 F011 F63TNR F852 FDS6990A FDS6990S FDS9953A L86Z
Text: FDS6990S Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS6990S
FDS6990S
FDS6990A
MOSFET and parallel Schottky diode
CBVK741B019
F011
F63TNR
F852
FDS6990A
FDS9953A
L86Z
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9959
Abstract: No abstract text available
Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4412DY
9959
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Untitled
Abstract: No abstract text available
Text: FDS6961AZ Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6961AZ
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fds4935
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z c2335 9842A
Text: FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS4935
fds4935
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
c2335
9842A
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FDS6694
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Text: FDS6694 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS6694
FDS6694
CBVK741B019
F011
F63TNR
F852
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.
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FDS2570
CBVK741B019
F011
F63TNR
F852
FDS2570
FDS9953A
L86Z
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6690A FDS6984S FDS6986S FDS9953A L86Z
Text: FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages
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FDS6986S
FDS6986S
CBVK741B019
F011
F63TNR
F852
FDS6690A
FDS6984S
FDS9953A
L86Z
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Untitled
Abstract: No abstract text available
Text: T E C H N IC A L Page DATA 1 / 1 R143.713.200 TNC FEMALE - MALE PUSH-ON ADAPTOR TN C S ER IE8 »14.5 S t r a i g h t knurled /I 32. 7 50 NOMINAL IMPEDANCE 0-4 GHz -65/+165 *c FREQUENCY RANGE TEMPERATURE RATING V.S.W.R 1.08 + .025 0.04 RF INSERTION LOSS n
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9842A00
01-MAR-95
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