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    FDS6576 Price and Stock

    onsemi FDS6576

    MOSFET P-CH 20V 11A 8SOIC
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    DigiKey FDS6576 Reel 5,000 2,500
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    FDS6576 Cut Tape 2,305 1
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    FDS6576 Digi-Reel 1
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    Avnet Americas FDS6576 Reel 4 Weeks 724
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    Mouser Electronics FDS6576 7,077
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    Newark FDS6576 Cut Tape 2,500
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    Onlinecomponents.com FDS6576
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    Rochester Electronics FDS6576 3,558 1
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    TME FDS6576 1
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    Richardson RFPD FDS6576 2,500
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    Flip Electronics FDS6576 4,512
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    Wuhan P&S FDS6576 5,000 1
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    onsemi FDS6576.

    Mosfet, P, Smd, 8-Soic; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-830Mv; Power Dissipation Rohs Compliant: Yes |Onsemi FDS6576.
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    Newark FDS6576. Cut Tape 7,141 1
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    Fairchild Semiconductor Corporation FDS6576

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    Bristol Electronics FDS6576 1,887
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    Quest Components FDS6576 3,550
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    FDS6576 1,200
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    FDS6576 94
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    Others FDS6576

    INSTOCK
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    Chip 1 Exchange FDS6576 6,500
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    FDS6576 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDS6576 Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDS6576 Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDS6576 Fairchild Semiconductor P-Channel 2.5 V Specified PowerTrench MOSFET Original PDF
    FDS6576 Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDS6576 Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Scan PDF
    FDS6576_NL Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF

    FDS6576 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    PDF FDS6576

    FDS6576

    Abstract: 7w66
    Text: FDS6576 P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    PDF FDS6576 FDS6576 7w66

    F63TNR

    Abstract: F852 FDS6576 FDS9953A L86Z CBVK741B019 F011
    Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    PDF FDS6576 F63TNR F852 FDS6576 FDS9953A L86Z CBVK741B019 F011

    dimension SOIC8 package

    Abstract: No abstract text available
    Text: FDS6576 P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original
    PDF FDS6576 dimension SOIC8 package

    FDS6576

    Abstract: No abstract text available
    Text: tm FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced ® PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    PDF FDS6576 FDS6576

    Untitled

    Abstract: No abstract text available
    Text: tm FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET Features General Description –11 A, –20 V. RDS ON = 0.014 :@ VGS = –4.5 V This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced ® PowerTrench process. It has been optimized for power


    Original
    PDF FDS6576 FDS6576

    Untitled

    Abstract: No abstract text available
    Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original
    PDF FDS6576

    FDS6576

    Abstract: No abstract text available
    Text: FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original
    PDF FDS6576 FDS6576

    Untitled

    Abstract: No abstract text available
    Text: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


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    PDF LT8584 LTC680x 16-Lead LTC6802, LTC6803, LTC6804 TA03a LTC3300-1 48-Lead LTC6803

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    FDS4953

    Abstract: FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975
    Text: Discrete MOSFET SO-8 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SO-8 N-Channel FDS6898A 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6898AZ 20 Dual - 0.014 0.018 - 16 9.4 2 FDS6894A


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    PDF FDS6898A FDS6898AZ FDS6894A FDS6894AZ FDS6890A FDS6892A FDS6892AZ FDS6812A FDS4465 FDS6575 FDS4953 FDS6574A FDS4935 fds4488 fds6875 FDS3670 FDS6676 FDS6690S fds6912 FDS6975

    HTGB

    Abstract: FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912
    Text: Date Created: 1/23/2004 Date Issued: 2/13/2004 PCN # 20040403 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


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    PDF fairchil936 BNY001A SI4412DY SI4425DY SI4450DY SI4467DY SI4539DY SI4835DY SI4920DY SI4953DY HTGB FDS*35A FDS*6609A fds4559 fds5680 FDS3670 FDS369 FDS4935A FDS6675A fds6912

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    SI7615A

    Abstract: LTC6802-1
    Text: LT8584 2.5A Monolithic Active Cell Balancer with Telemetry Interface Description Features 2.5A Typical Average Cell Discharge Current n Integrated 6A, 50V Power Switch n Integrates Seamlessly with LTC680x Family: No Additional Software Required n Selectable Current and Temperature Monitors


    Original
    PDF LT8584 LTC680x 16-Lead C3300-1 48-Lead LTC6802-1 SSOP-44 LTC6803-1/ LTC6803-3 SI7615A LTC6802-1

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


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    PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    FDS6576

    Abstract: No abstract text available
    Text: =M l C O N D U C T O R PRELIMINARY tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power


    OCR Scan
    PDF FDS6576 /-10V FDS6576

    Untitled

    Abstract: No abstract text available
    Text: EMI CO N D U CTO R PRELIMINARY tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power


    OCR Scan
    PDF FDS6576 FDS6576