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    8MX40 Price and Stock

    Panasonic Electronic Components M8MX40S2YS

    MOTOR INDUCT 80MM 100V 40W
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    DigiKey M8MX40S2YS Box 10
    • 1 -
    • 10 $107.45
    • 100 $107.45
    • 1000 $107.45
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    RS M8MX40S2YS Bulk 1
    • 1 $114.22
    • 10 $108.51
    • 100 $91.38
    • 1000 $91.38
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    Panasonic Electronic Components M8MX40S2YGA

    STANDARD MTR 3175 RPM 200/220V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M8MX40S2YGA Box 10
    • 1 -
    • 10 $116.081
    • 100 $116.081
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    RS M8MX40S2YGA Bulk 1
    • 1 $118.15
    • 10 $112.24
    • 100 $94.52
    • 1000 $94.52
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    Gates 8MX-40S-21

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-40S-21
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    RS 8MX-40S-21 Bulk 1 1
    • 1 $162.17
    • 10 $162.17
    • 100 $162.17
    • 1000 $162.17
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    Gates 8MX-40S-62

    Belt Sprocket, Poly Chain GT2 Sprockets,8MM | Gates 8MX-40S-62
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    RS 8MX-40S-62 Bulk 1
    • 1 $271.9
    • 10 $258.31
    • 100 $231.12
    • 1000 $231.12
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    Martin Sprocket & Gear Inc PB8MX40S62

    Poly Chain Sprocket, MPC, rough stock bore, 8MM belt, 62MM belt width, 40 teeth | Martin Sprocket & Gear PB8MX40S62
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    RS PB8MX40S62 Bulk 6 Weeks 1
    • 1 $282.55
    • 10 $268.42
    • 100 $240.17
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    • 10000 $240.17
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    Find more 8MX40 price and stock on Findchips.com

    8MX40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    408006EQS4G07TH

    Abstract: No abstract text available
    Text: 8M x 40 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 408006EQS4G07TH 100 Pin 8Mx40 EDO DIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61


    Original     		PDF 408006EQS4G07TH 8Mx40 4Mx16 256x8

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5721680UUEUGU Modular Technologies September 23, 1997 128MByte 16M x 72 DRAM Module - 8Mx8 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM57216800UEUGU SM57216801UEUGU SM57216808UEUGU SM57216809UEUGU


    Original     		PDF SM5721680UUEUGU 128MByte 168-pin SM57216800UEUGU SM57216801UEUGU SM57216808UEUGU SM57216809UEUGU 50/60/70ns 400mil AMP-390052-1

    4Mx4 dram simm

    Abstract: TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k
    Text: Memory Overview Package Type -Pin Count Supply Voltage Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F NVM Flash_Card CF-50 3.3; 5.0 Compact flash card 15MByte NVM Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F HB286015C3 15MByte NVM Flash_Card


    Original     		PDF ATA-68 CF-50 15MByte HB286015C3 HB286030A3 30MByte 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    Untitled

    Abstract: No abstract text available
    Text: SM5720880UUEUGU April 25, 2000 Revision History • April 25, 2000 Modified column addresses on page 3. • April 28, 1998 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM5720880UUEUGU 64MByte 168-pin

    MCM91430

    Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
    Text: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1


    Original     		PDF stan00C 1Mx16 MCM4L4400B MCM5L4100A MCM54100A 256Kx16 512Kx8 MCM5L4100A MCM54100A MCM91430 Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B

    xc68040

    Abstract: xc68307 MC88110 mpc 1488 mc68185 Motorola M 9587 xc68lc040 XPC106 MC88100 XPC105
    Text: BR1100/D REV 22 Microprocessor and Memory Technologies Group Reliability and Quality Report Third Quarter 1996 MICROPROCESSOR AND MEMORY TECHNOLOGIES GROUP RELIABILITY AND QUALITY REPORT QUARTER 3, 1996  MOTOROLA INC., 1996 To Our Valued Customers: Thank You! Thank you for selecting Motorola as your supplier of Microprocessor and Memory Products.


    Original     		PDF BR1100/D xc68040 xc68307 MC88110 mpc 1488 mc68185 Motorola M 9587 xc68lc040 XPC106 MC88100 XPC105

    Untitled

    Abstract: No abstract text available
    Text: SMART SM572088094E6G6 Modular Technologies September 30, 1999 Revision History • September 30, 1999 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM572088094E6G6 64MByte 168-pin

    km44c4000ak

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5408000AK/AKG Fast Page Mode Preliminary 8Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Samsung KMM5408000AK is a 8M bit x 40 D ynam ic RAM high density m em ory module. The FEATURES


    OCR Scan     		PDF KMM5408000AK/AKG 8Mx40 KMM5408000AK 5408000AK 24-pin 72-pin km44c4000ak

    m5408

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM54081OOAK/AKG Fast Page Mode 8Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package G EN ERA L D ESCRIPTIO N FEATURES • Performance Range' The Samsung KM M 5408100AK is a 8M bit x 40 Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM54081OOAK/AKG 8Mx40 5408100AK KMM5408100AK 24-pin 72-pin KMM54O0100AK KMM540B100AK m5408

    fe 540b

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5408000AK/AKG Fast Page Mode 8Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAR with 300 mil Package GENERAL DESCRIPTION FEATURES P e rfo rm an ce R ange: T h e S a m s u n g K M M 5 4 0 B 0 0 0 A K is a BM bit x 4 0 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e


    OCR Scan     		PDF KMM5408000AK/AKG 8Mx40 KMM54O0OOOAK 44C4000AK fe 540b

    HB56D836SBT-AC

    Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
    Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms


    OCR Scan     		PDF 72-pin A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL HB56A132BW-B/BL HB56A132SBW-B/BL HB56A132BW-C/CL HB56A132SBW-C/CL HB56A232BT-B/BL HB56D836SBT-AC power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B

    GM71C18160AJ7

    Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
    Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I


    OCR Scan     		PDF GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    LG 2MX32 EDO simm module

    Abstract: GMM732201 GMM732411OCNS
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32


    OCR Scan     		PDF \GMM781000CNS-6 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 1GMM781OOOCNS-7 1GMM791000CNS-7 1GMM784000CS-7 1GMM794000CS-7 1Mx40 2Mx32 LG 2MX32 EDO simm module GMM732201 GMM732411OCNS

    GMM732411

    Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6


    OCR Scan     		PDF OMM781000CNS-6 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 GMM781OOOCNS-7 GMM79I GMM784000CS-7 GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM732411 GMM7362000 GMM732411OCNS OMM781000CNS

    KMM5334100

    Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
    Text: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13


    OCR Scan     		PDF KMM581000CN-6/7/8 KMM591000CN-6/7/8 KMM5362203AW/WG-6/7/8 KMM5362209AU/AUG-6/7/8. KMM5334100 LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm

    2MX32

    Abstract: No abstract text available
    Text: Contents Quick Module Reference. 5 72-Pin DRAM S IP Data Sheets 11 lM x32 HB56A132 Series. HB56A132B W/SB W Series. HB56A232 Series. HB56A432 Series. HB56A832 Series. 13 21 28


    OCR Scan     		PDF 72-Pin 2Mx32 4Mx32 8Mx32 1Mx36 2Mx36 8Mx36 HB56A132 HB56A132B HB56A232

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    m7401

    Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6


    OCR Scan     		PDF 1GMM781000CNS-6 GMM791GOOCNS-6 GMM784000CS-6 GMM794000CS-6 GMM781000CNS-7 GMM791000CNS-7 GMM784000CS-7 GMM794000CS-7 GMM7321OOOCS/SG-6 GMM732101OCS/SG-6 m7401 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb

    SIMM 1Mx9 30pin

    Abstract: simm EDO 72pin KMM51442100ATG KMM532
    Text: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16


    OCR Scan     		PDF 1Mx32 1Mx33 1Mx36 KMM581000CN KMM5B1020CN KMM591000CN KMM591020CN KMM5321000CV/CVG KMM5331000C/CG KMM5361000C2/C2G SIMM 1Mx9 30pin simm EDO 72pin KMM51442100ATG KMM532

    M5M417500

    Abstract: MH8M325CJ-6 MH8M325CNJ-6 M5M417500B MH8M325CNJ-7 M5M417405CJ MH4M325CJJ-6 MH8M32 M5M417800CTP MH4M36CXJ6
    Text: # 72 pin SIMM Continued Memory Bit Configuration (Word X Bit) P t» W supply voltage Load nwnories Bank Configuration Package outline Outward dimensions Contact W X H X D (m m ) Plating Ni +Solder plating Both sides 4Mx36 107.95X25.4X8.6 Au plating M5M417405CJx8


    OCR Scan     		PDF M5M417400CJx8 M5M44100C 4Mx36 M5M417405CJx8 M5M44105CJx4 M5M417400CJX10 95X25 MH4M36CXJ-6 MH4M36CXJ-7 M5M417500 MH8M325CJ-6 MH8M325CNJ-6 M5M417500B MH8M325CNJ-7 M5M417405CJ MH4M325CJJ-6 MH8M32 M5M417800CTP MH4M36CXJ6

    GM71C4400BJ70

    Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
    Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80


    OCR Scan     		PDF 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256