Cx2829
Abstract: ,national semiconductor Linear brief lb-3
Text: CX28250 ATM Physical Interface PHY Devices The CX28250 is an ATM-SONET Physical Layer (PHY) device with an integrated, PLL clock and data recovery (CDR) circuit. This device has optimized SONET framer functions for mapping ATM cells to SONET payloads for edge switch applications, and
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CX28250
53-byte
28250-DSH-002-A
CX28250
Cx2829
,national semiconductor Linear brief lb-3
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J32CG
Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0
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750GX
TSI108
RS232
NC7SZ00
J32CG
61a3 mosfet
BCM5461KFB
61a3
58A6
bcm5461
60F10
L32SD
DQ27152
A26B4
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Nippon capacitors
Abstract: No abstract text available
Text: B56AW472E-5/6/7 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-747A Z Rev. 1.0 Feb. 28, 1997 Description The H B56A W 472E belongs to 8 B yte DIMM (Dual In-line M em ory M odule) family, and has been developed as an optim ized m ain m em ory solution for 4 and 8 Byte processor applications. The
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HB56AW472E-5/6/7
304-word
72-bit
ADE-203-747A
16-bit
T16244)
HB56AW
168-pin
Nippon capacitors
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hb56a51240
Abstract: HM514256 HB56A51240BR7A
Text: blE P • 44^b203 002355b blB ■HITE! B56A51240BR Series 524,288-W ord x 40-Bit High Density Dynamic RAM Module HITACHI/ LOGIC/ARRAYS/MEM The H B56A51240BR is a 512k x 40 dynamic RAM m odule, m ounted 20 p ieces o f I-M bit DRAM HM514256AJP sealed in SOJ package.
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002355b
HB56A51240BR
40-Bit
B56A51240BR
HM514256AJP)
72-pin
HB56A51240BR-6A
hb56a51240
HM514256
HB56A51240BR7A
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514400C
Abstract: No abstract text available
Text: B56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The H B56A 140BR is a 1M X 40 dynam ic RAM m odule, m ounted 10 pieces of 4-M bit DRAM HM514400CS/CLS sealed in SOJ package. An outline of the B56A140BR is 72-pin single in-line
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HB56A140BR
576-word
40-bit
ADE-203Rev.
140BR
HM514400CS/CLS)
72-pin
514400C
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HB56A19B
Abstract: No abstract text available
Text: B56A19 Series-1,048,576-words x 9 bits High Density Dynamic R A M Module The H B 5 6A 19 is a 1M x 9 dynamic R A M module, mounted 9 pieces of 1-Mbit D R A M HM511000JP sealed in SO J package. A n outline of the H B56A 19 is 30-pin single-in-line package having
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HB56A19
576-words
HM511000JP)
30-pin
HB56A19B)
HM511000JP
54niu.
10Qmin.
a005i
HB56A19B
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Untitled
Abstract: No abstract text available
Text: B56A132 Series 1,048,576-word x 32-Bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1,1995 Description The H B56A132 is a 1 M x 32 dynamic RAM m odule, mounted 8 pieces o f 4-M bit DRAM (HM514400CS/CLS) sealed in SOJ package. An outline of the B56A132 is 72-pin single in-line package.
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HB56A132
576-word
32-Bit
ADE-203Rev.
B56A132
HM514400CS/CLS)
72-pin
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Untitled
Abstract: No abstract text available
Text: blE D • 4 4 ^ 5 0 3 DG2371b ÔT3 ■ H I T ? H B 56A 168 S e r ie s HITACHI/ l ogi c / arrays / heii 16,777,216-Word x 8-Bit High Density Dynamic RAM Module The H B56A 168 is a 16 M x8 dynam ic RAM m odule, m ounted 8 pieces o f 16-Mbit DRAM HM5116100J sealed in SOJ package. An outline
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DG2371b
216-Word
16-Mbit
HM5116100J)
HB56A168
30-pin
HB56A168AT-6
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D069
Abstract: PD-8100
Text: ^ 1 'i "T ’S G-» B56A164EJ Series 1,048,576-W ord x 64-Bit High Density Dynamic RAM Module HITACHI The H B56A 164E J belongs to 8 B yte D IM M Dual In-line M em ory M odule fam ily, and has been developed as an optim ized main m em ory solution for 4 and 8 B yte processor applications.
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HB56A164EJ
64-Bit
514400B
16-bit
16244D
168-pin
D-85540
D-85530
D069
PD-8100
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HB56A18B-8A
Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
Text: B56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The B56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single
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HB56A18
576-Word
HM511000JP)
30-pin
HB56A18A,
HB56A18AT)
HB56A18B)
HB56A18B-8A
SIMM 30-pin
HB56A18B
HB56A18AT-6H
"30 pin simm"
30-pin SIMM RAM
30 pin SIMM socket
HB56A18B8A
zp 1401
we221
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HM5117400J
Abstract: No abstract text available
Text: NEW PRODUCT B56A432B Series 4,194,304-Word X 32-Bit High Density Dynamic RAM Module - PRODUCT P R E V IE W - Rev.O Dec. 24.1991 ^H IT A C H I D escription T he H B56A432B is a 4M X 32 dynam ic RAM m odule, m ounted 8 pieces of 16Mbit DRAM H M S117400J sealed in SOJ package. An outline of th e B56A432B is 72-pin single in-line
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HB56A432B
304-Word
32-Bit
B56A432B
16Mbit
S117400J)
72-pin
HM5117400J
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B56A
Abstract: No abstract text available
Text: B56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56A49 is a 4M x 9 dynam ic RAM m odule, m ount ed 9 pieces o f 4 M bit D RAM H M 514100AS, H M 514100JP sealed in an SOJ package. An outline o f th e H B56A49 is the
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HB56A49
304-Word
B56A49
514100AS,
514100JP)
30-pin
HBS6A49
B56A
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Nippon capacitors
Abstract: No abstract text available
Text: B56AW472E-5/6/7 32 MB Buffered FP DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HITACHI ADE-203-747B (Z) Rev. 2.0 Nov. 1997 Description The H B56A W 472E belongs to 8 B yte DIMM (Dual In-line M em ory M odule) family, and has been
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HB56AW472E-5/6/7
72-bit,
ADE-203-747B
HM51W16400)
16-bit
T16244)
HB56AW
168-pin
HB56A
Nippon capacitors
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B56A
Abstract: No abstract text available
Text: B56A272E Series Preliminary 2,097,152-Word x 72-Bit High Density Dynamic RAM Module HITACHI The H B56A 272E belongs to 8 Byte DIMM Dual In-line Mem ory M odule fam ily, and has been developed as an optim ized m ain m emory solution for 4 and 8 Byte processor applications.
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HB56A272E
152-Word
72-Bit
16-Mbit
5117800B
16-bit
BT16244D
HBS6A272E
168-pin
HB56A
B56A
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Untitled
Abstract: No abstract text available
Text: bJE 1 • MMRbSDB QDS3b74 5 m B56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M
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QDS3b74
HB56A169
5116100J)
30-pin
HB56A169A
HB56A169AT
Q023bflD
B56A169B
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51W16400
Abstract: Nippon capacitors
Text: B56AW872EJK Series 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-719A Z Rev. 1.0 Feb. 20, 1997 Description The B56AW 872EJK belongs to 8 Byte DIMM (Dual In-line M emory M odule) family, and has been developed as an optim ized main memory solution for 4 and 8 Byte processor applications. The
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HB56AW872EJK
608-word
72-bit
ADE-203-719A
HB56AW
872EJK
B56AW
16-Mbit
16-bit
51W16400
Nippon capacitors
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B56A
Abstract: HB56AW232D-7b
Text: B56AW232D Series Preliminary 2,097,152-W ord x 32-Bit High Density Dynamic RAM Module H ITA CH I T he H B 56A W 232D is a 2M x 32 dynam ic RA M Sm all O utline Dual In-line M em ory M odule S O .D IM M , m ounted 4pieces o f 16-M bit DRA M (H M 51W 17800B TT)sealed in T S O P package .
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HB56AW232D
32-Bit
17800B
72-pin
HB56A
B56A
HB56AW232D-7b
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Untitled
Abstract: No abstract text available
Text: B56A48A/AT/B-8/10/12 8-Bit DRAM 4,194,304-Word x 8-Bit High Density Dynamic RAM Module PIN OUT • DESCRIPTION The B56A48 is a 4M x 8 dynamic RAM module, mounted eight 4Mbit DRAM HM514100JP sealed in SOJ package. An outline of the B56A48 is 30-pin single in-line package having Lead types
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HB56A48A/AT/B-8/10/12
304-Word
HB56A48
HM514100JP)
30-pin
HB56A48A,
HB56A48AT)
HB56A48B)
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Untitled
Abstract: No abstract text available
Text: B56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module • 72-pin single in-line package - L ead p itch : 1.27 mm • Single 5 V ± 5% supply • H igh speed - A ccess tim e : 60 ns/70 ns/80 ns (m ax) • L ow pow er dissipation - O perating : 5.775 W /5.250 W /4.725 W (m ax)
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HB56A140BR
576-word
40-bit
HB56A140BR-6B/6BL
HB56A140BR-7B/7BL
HB56A140BR-8B/8BL
HB56A140BR-ess
DQO-DQ39)
514400B
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Untitled
Abstract: No abstract text available
Text: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types
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/AT/B-8/10/12
304-Word
514100JP)
30-pin
HB56A49A,
HB56A49AT)
56A49B)
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Untitled
Abstract: No abstract text available
Text: B56A172E Series 1,048,576-word X 72-bit ECC High Density Dynamic RAM Module Description The B56A172E belongs to 8 Byte DIMM (Dual In-line M em ory M odule) fam ily, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A172E
576-word
72-bit
514400B
T162244DGG)
168-pin
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL B56A132SBV-B/BL B56A132BV/BU-C/CL B56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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TI624
Abstract: TI6244
Text: B56A264EJ Series Preliminary 2 ,0 9 7 ,1 5 2 -W o rd x 64-B it H igh D ensity D ynam ic RAM M odule HITACHI . ne H B 5 6 A 2 6 4 E I b e lo n g s to 8 B y te D IM M D u a l In -lin e M e m o ry M o d u le fa m ily , a n d h a s b e en d e v elo p ed a s a n o p tim iz e d m a in m e m o ry s o lu tio n
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HB56A264EJ
TI624
TI6244
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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