M5364080 Search Results

M5364080 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M53640800CB0-C50		Samsung Electronics	8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V		Original	PDF
M53640800CB0-C60		Samsung Electronics	8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V		Original	PDF
M53640800CW0-C50		Samsung Electronics	8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V		Original	PDF
M53640800CW0-C60		Samsung Electronics	8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V		Original	PDF
M53640805BT0-C50		Samsung Electronics	8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V		Original	PDF
M53640805BT0-C60		Samsung Electronics	8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V		Original	PDF
M53640805BY0-C50		Samsung Electronics	8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V		Original	PDF
M53640805BY0-C60		Samsung Electronics	8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V		Original	PDF

M5364080 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE	Original	M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.	Original	M53640805BY0/BT0-C 8Mx36 4Mx16 M53640805BY0/BT0-C 8Mx36bits	PDF
Untitled Abstract: No abstract text available Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D	Original	M53640800DW0/DB0 M53640810DW0/DB0 M53640800DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin	PDF
Untitled Abstract: No abstract text available Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D	Original	M53640800DW0/DB0 M53640810DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin	PDF
DQ9-DQ12 Abstract: No abstract text available Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C	Original	M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12	PDF