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    M53640812C Search Results

    M53640812C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M53640812CB0-5 Samsung Electronics EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V Original PDF
    M53640812CB0-6 Samsung Electronics EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V Original PDF
    M53640812CW0-5 Samsung Electronics EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V Original PDF

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    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


    Original     		PDF M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0