8KX8 SRAM Search Results

8KX8 SRAM Result Highlights (5)

Part	Manufacturer	Description
MD27C64-25	Rochester Electronics LLC	UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28
MD27C64-20	Rochester Electronics LLC	UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28
MD27C64-35	Rochester Electronics LLC	UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28
MD2114A-5	Rochester Electronics LLC	SRAM
HM3-6504B-9	Rochester Electronics LLC	Standard SRAM, 4KX1, 220ns, CMOS, PDIP18

8KX8 SRAM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN	Original	LH5164AN	PDF
CS16LV40963 Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D	Original	32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D	PDF
BD4822 Abstract: No abstract text available Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized	Original	bq4822Y 10-year BD4822	PDF
Untitled Abstract: No abstract text available Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized	Original	bq4822Y 10-year	PDF
IS61SP25636 Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64 Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B	Original	32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64	PDF
BD4822 Abstract: No abstract text available Text: Not Recommended for new Designs bq4822Y RTC Module With 8Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4822Y RTC Module is a nonvolatile 65,536-bit SRAM organized	Original	bq4822Y 536-bit BD4822	PDF
HM65664A Abstract: SOJ28 Text: Temic Semiconductors Part Number Format Temperature Range °G H M 65664A -9 8Kx8 -40 to +85 4.5 to 5.5 35 to 55 5/100 2 to 30 75 to 100 HM 65664A -A 8Kx8 -40 t o +125 4.5 to 5.5 35 to 55 50/500 20 to 200 75 to 100 H M 65664A -2 CL65664 8Kx8 8Kx8 -55 to +125	OCR Scan	5664A CL65664 IL65664 L65664 PDIL28( PDIL28Î S028I SOJ28 HM65664A	PDF
Untitled Abstract: No abstract text available Text: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.	OCR Scan	EDI8810H/L EDI8810H/L 653bit,	PDF
EDI8808CB Abstract: No abstract text available Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.	OCR Scan	EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12	PDF
Untitled Abstract: No abstract text available Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package	OCR Scan	bq431OY bq4310Y 28-pin, 330-mil 4833YPD bg4310YSH- bq48SH	PDF
80C31 instruction set Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31 Text: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single	OCR Scan	685C31 80C31 80C31, 685C31-8CMHR 685C31 -12CMH GU185RF 80C31 instruction set BOC31 F800H MCS-51 80c31 application	PDF
transistor D883 Abstract: EDI8810HL e255 8KX8-Bit CMOS SRAM Text: ^EDI _ EDI8810H/L Electronic D e sig n s I n o * Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic iUMDN Features The EDI8810H/L is a 65,653bit, 6 transistor cell CMOS Static RAM organized as 8Kx8. It is available in both standard H and low power (L)	OCR Scan	EDI8810HL EDI8810H/L 653bit, transistor D883 EDI8810HL e255 8KX8-Bit CMOS SRAM	PDF
UPAK Abstract: static ram 8KX8 sram 8kx8 memory map Text: pS. & • t<b EDH 685C31 ^E D I EEPROM \|iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules	OCR Scan	685C31 80C31 685C31 80C31, on85C31-8CMHR 685C31-12CMHR UPAK static ram 8KX8 sram 8kx8 memory map	PDF
1202z Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3 Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883	OCR Scan	5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3	PDF

Untitled Abstract: No abstract text available Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow	OCR Scan	EDI8808CB EDI8808CB 536bit, MIL-STD-883,	PDF
Untitled Abstract: No abstract text available Text: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time	OCR Scan	AS7C164 AS7C164L 605mW 300mil	PDF
Untitled Abstract: No abstract text available Text: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)	OCR Scan	EDI8810H/L ecEDI8810H/L 8810H/L	PDF
ELECTRONIC DESIGNS INC 91 PAGE 343 Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL Text: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)	OCR Scan	EDI8810HL EDI8810H/L 653bit, 128Kx8 ELECTRONIC DESIGNS INC 91 PAGE 343 E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL	PDF
as7c164 Abstract: No abstract text available Text: H ig h P e rfo rm a n ce m 8KX8 RI AS7C164 A S7C I64L CMOS SRAM oa 8Kx8 CMOS SRAM Common I/O Features • Organization: 8,192 words x 8 bits • High speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time	OCR Scan	AS7C164 28-pin as7c164	PDF
AS7C164-20PC Abstract: AS7C164 000DM 7C164-12 7C164-10 Text: H igh Perform ance AS7C164 AS7C.164L 8Kx8 CMOS SRAM A 8Kx8 CMOS SRAM Common I /O Features • Organization: 8,192 words x 8 bits • H igh speed - 8 / 1 0 / 1 2 / 1 5 / 2 0 ns address access time - 3 / 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption	OCR Scan	AS7C164 28-pin AS7C164-20PC AS7C164 000DM 7C164-12 7C164-10	PDF
A12C Abstract: HT6264-70 Text: HOLTEK& n r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • O p e ra tin g voltage: 5V Low pow er consum ption - O peration: 200m W typ. - S tandby: 5(iW (typ.) 70ns (max.) high speed access tim e M em ory ex pansion by pin OE • • • • • P in -co m p atib le w ith s ta n d a rd 8Kx8	OCR Scan	HT6264-70 200mW 28-pin HT6264-70 536-bit A12C	PDF
HT6264-70 Abstract: A12C 8Kx8bit Text: HOLTEK HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • Com m on I/O u sin g tr i- s ta te o u tp u ts TTL com patible in te rfa c e levels F u lly s ta tic o p era tio n P in -co m p atib le w ith s ta n d a rd 8Kx8 b its of EPR O M /M A SK ROM 28-pin D IP /S D IP /SO P p ackage	OCR Scan	HT6264-70 200mW 28-pin 536-bit HT6264-70 A12C 8Kx8bit	PDF
AN923 Abstract: AN934 M48T559Y M48T59 M4T28-BR12SH1 SOH28 STATIC RAM 16x8 Z623 Text: w . SGS-THOMSON k7# . OMGMiDlglLECTMMSl _M48T559Y 64K 8Kx8) TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED • SOFTWARE and HARDWARE RESET for WATCHDOG TIMER ■ REGISTER COMPATIBLE with M48T59 TIMEKEEPERSRAM ■ ADDRESS/DATA MULTIPLEXED I/O PINS	OCR Scan	M48T559Y M48T59 M48T559Y: SOH28 AN923 AN934 M48T559Y M4T28-BR12SH1 SOH28 STATIC RAM 16x8 Z623	PDF
FF5H Abstract: M4T28-BR12SH1 AN923 AN934 M48T559Y M48T59 SOH28 Z623 Text: w . SGS-THOMSON k7# . OMGMiDlglLECTMMSl _M48T559Y 64K 8Kx8) TIMEKEEPER SRAM with ADDRESS/DATA MULTIPLEXED • SOFTWARE and HARDWARE RESET for WATCHDOG TIMER ■ REGISTER COMPATIBLE with M48T59 TIMEKEEPERSRAM ■ ADDRESS/DATA MULTIPLEXED I/O PINS	OCR Scan	M48T559Y M48T59 M48T559Y: SOH28 FF5H M4T28-BR12SH1 AN923 AN934 M48T559Y SOH28 Z623	PDF

8KX8 SRAM Search Results

8KX8 SRAM Result Highlights (5)

8KX8 SRAM Datasheets Context Search

Untitled

CS16LV40963

BD4822

Untitled

IS61SP25636

BD4822

HM65664A

Untitled

EDI8808CB

Untitled

80C31 instruction set

transistor D883

UPAK

1202z

Untitled

Untitled

Untitled

ELECTRONIC DESIGNS INC 91 PAGE 343

as7c164

AS7C164-20PC

A12C

HT6264-70

AN923

FF5H