2SK2247
Abstract: No abstract text available
Text: 2SK2247 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,
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2SK2247
2SK2247
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2SB1002
Abstract: 2SD1368 2SD789 Mark CA DSA003638
Text: 2SD1368 Silicon NPN Epitaxial ADE-208-1148 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C)
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2SD1368
ADE-208-1148
2SB1002
2SB1002
2SD1368
2SD789
Mark CA
DSA003638
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2SB1001
Abstract: 2SD1367 DSA003638
Text: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)
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2SD1367
ADE-208-1147
2SB1001
2SB1001
2SD1367
DSA003638
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2SB1025
Abstract: 2SB1026 2SD1419 DSA003775
Text: 2SB1026 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1419 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SB1026 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SB1026
2SD1419
2SB1025
2SB1026
2SD1419
DSA003775
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2SD1470
Abstract: DSA003638
Text: 2SD1470 Silicon NPN Epitaxial, Darlington ADE-208-1153 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SD1470 Absolute Maximum Ratings (Ta = 25°C) Item
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2SD1470
ADE-208-1153
2SD1470
DSA003638
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2SD1420
Abstract: DSA003638
Text: 2SD1420 Silicon NPN Epitaxial ADE-208-1151 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SD1420
ADE-208-1151
2SD1420
DSA003638
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Hitachi 2SJ
Abstract: Hitachi DSA001651
Text: 2SJ450 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 3 2 1 4 D 1. Gate 2. Drain G 3. Source 4. Drain S 2SJ450
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2SJ450
D-85622
Hitachi 2SJ
Hitachi DSA001651
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Hitachi DSA0076
Abstract: 2SB1027
Text: 2SB1027 Silicon PNP Epitaxial ADE-208-1038 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1027 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1027
ADE-208-1038
Hitachi DSA0076
2SB1027
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain
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2SJ361
Hitachi DSA002713
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Hitachi DSA002779
Abstract: No abstract text available
Text: 2SK1579 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Suitable for low voltage operation Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1579 Absolute Maximum Ratings Ta = 25°C unless otherwise specified.
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2SK1579
D-85622
Hitachi DSA002779
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Hitachi DSA0076
Abstract: 2SB1028
Text: 2SB1028 Silicon PNP Epitaxial ADE-208-1039 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1028 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SB1028
ADE-208-1039
Hitachi DSA0076
2SB1028
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2SK1579
Abstract: DSA003639 2SK157
Text: 2SK1579 Silicon N-Channel MOS FET ADE-208-1296 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance • High speed switching • Suitable for low voltage operation Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source
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2SK1579
ADE-208-1296
2SK1579
DSA003639
2SK157
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2SD1472
Abstract: DSA003730
Text: 2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Flange ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SD1472
2SD1472
DSA003730
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UPAK
Abstract: 2003
Text: As of January, 2003 Unit: mm 1.5 1.5 3.0 0.44 Max Package Code JEDEC JEITA Mass reference value (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g
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LC 500-S
Abstract: 2SD1368
Text: 2SD1368 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2 S B 1 X 2 Outline UPAK 1 1. 2. 3. 4. 922 Base Collector Emitter Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SD1368
2SD1368
2SB1002
LC 500-S
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hiki
Abstract: 2SD141 2SD1419
Text: HITACHI 2SD1419 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Com plem entary pair with 2 S 3 1 025 _ -q I U.VÎ 3 Coilicif»,J, FjrtlilKr < Coì'-ì ì Ic* ifi ninii> UPAK AB SO LU TE M AXIM UM RATINGS (Ta=2$*’C) m a x im u m c o l l e c t o r p o w e r
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2SD1419â
2S31025
2SD1419
500mA4*
500mA.
150mA*
2SD141Ã
hiki
2SD141
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2SD1974
Abstract: No abstract text available
Text: HITACHI 2SD1974-SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER J y h 5 S ik 7. C tC « i« UTO r }. k-Tvr^i -Sl L i i * D irW iiiM i ih im {UPAK) • ABSOLUTE MAXIMUM RATINGS (Ta=2yC) lie in S ym bol MAXIMUM COLLECTOR DISSIPATION CURVE 2 S P I 974
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2SD1974
2SD1974
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sram 8kx8 memory map
Abstract: 80C31 Development Board 80C31 F800H MCS-51 Ram 64k 8kX8 80C31 instruction set UPAK
Text: açx.o ^ ' it* ' E M 607G31 jxPak Family 8/12 MHz Th e fu tu re . . . today. Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM Features The EDH 607C31 uPAK family from EDI is the first in a series of high density microcomputer modules based on the industry-standard 80C31
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607G31
80C31
32Kx8
607C31
80C31,
or32Kx8
sram 8kx8 memory map
80C31 Development Board
F800H
MCS-51
Ram 64k 8kX8
80C31 instruction set
UPAK
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Untitled
Abstract: No abstract text available
Text: 2SB1001 Silicon PNP Epitaxial HITACHI Application • Low frequency power am plifier • Complementary pair with 2 S D 1367 Outline UPAK 2. Collector 3. Emitter 4. Collector Flange 222 2SB1001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit
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2SB1001
2SD1367
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base, collector, emitter
Abstract: No abstract text available
Text: HITACHI 2SC4643-Silicon NPN Epitaxial UHF/VHF Wide Band Amplifier Table 1 Absolute Maximum Ratings UPAK Ta = 25°C Item Symbol Rating Unit Collector to base voltage Vqbq 15 V Collector to emitter voltage VCEq 9 V Emitter to base voltage Vggo
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2SC4643-------------Silicon
2SC4592
base, collector, emitter
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L082
Abstract: ft-03
Text: OJLP 14 pins or more Outline 8 pins MSP 18 pins or more StP 3 pins UPAK 3 pins Plastic Plastic Plastic Plastic Plastic Plastic Consumer •— •— F MP *— Industrial PS P FP — P Material Suffix SOP 8 pins or more — U >i ; BJBWWr ¥ it * f* m m At
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3fr6632
ST-SLI-11-3
ADJ-D04-004A
L082
ft-03
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VC 474
Abstract: No abstract text available
Text: 2SC3380 Silicon NPN Triple Diffused HITACHI Application • High frequency high voltage amplifier • High voltage switch Outline UPAK 1 1. 2. 3. 4. 474 Base Collector Emitter Collector Flange 2SC3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SC3380
VC 474
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2sb1000
Abstract: No abstract text available
Text: HITACHI 2SB1000 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1366 _ iíiiü \ ftsr-ix i r, t >i r . !r r ^ " 1. Bdw 2. CoHcUor 3. Hmiucr 4. CoÜcciu» Range {Diincii^suiik in mai) (UPAK) MAXIMUM CO LLECTO R DISSIPATIO N
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2SB1000
2SD1366
2SB1000
2SB562.
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Untitled
Abstract: No abstract text available
Text: H ITACH I 2 S D 1 3 6 6 SIL.COM NPN EPITAXIAL LOW FREQUENCY POWER A M PtíFIgS Compfemortlary pai.* -aHii 2S81000 .iliii " t i »f . {UPAK I ABSO LUTE MAXIMUM RATINGS iTa=?5 *0 ItCìU $ ,• *U»i MAXIMUM CO LLECTO R DISSIPATION CURVE ÎS 0 1 A 6 6 C\>lkvìc>f la \%*%e volume
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2S81000
2SD1366
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