HY6264A
Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
Text: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A-
HY6264A/
HY6264A-I
192x8-bits
HY6264A/HY6264A-I
28pin
330mil
HY6264A
HY6264ALP-70
HY6264ALP
HY6264AJ
HY6264ALLP
HY6264AP
Hyundai Semiconductor HY6264A
HY6264AL
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HY6264ALP-70
Abstract: HY6264A HY6264ALP HY6264ALJ-70 Hyundai Semiconductor HY6264A HY6264AJ HY6264ALLP HY6264AP
Text: HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION minimize current drain is unnecessary for the HY6264A Series. The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process
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HY6264A
192x8-bits
HY6264A
70-Line
28pin
330mil
HY6264ALP-70
HY6264ALP
HY6264ALJ-70
Hyundai Semiconductor HY6264A
HY6264AJ
HY6264ALLP
HY6264AP
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A1201
Abstract: LE24LB642M USP6947325 6 PIN EEPROM h64K
Text: 注文コード No. N A 1 2 0 1 CMOS LSI LE24LB642M Two Wire Serial Interface EEPROM 64k EEPROM 概要 LE24LB642M は 2 線式シリアルインタフェース(I2C bus タイプ)EEPROM である。本製品は三洋 CMOS EEPROM 技術を採用することにより、高速動作、高信頼性を実現している。また、本製品のインタ
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LE24LB642M
64kbit
400kHz
USP6947325)
20080415-S00009
A1201-1/13
3032D
225mil)
A1201
LE24LB642M
USP6947325
6 PIN EEPROM
h64K
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x28c010 msl
Abstract: EEPROM X28HC64P-12 X28HC64JI die X28HC64PI-90 EEPROM256K X28HC64PZ-12
Text: X28HC64 64K, 8K x 8 Bit Data Sheet June 7, 2006 5 Volt, Byte Alterable EEPROM FN8109.1 • High reliability —Endurance: 1 million cycles —Data retention: 100 years • JEDEC approved byte-wide pin out • Pb-free plus anneal available RoHS compliant
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X28HC64
FN8109
--40mA
--64-byte
X28C010
X28C512
X28C513
X28HC256
x28c010 msl
EEPROM X28HC64P-12
X28HC64JI die
X28HC64PI-90
EEPROM256K
X28HC64PZ-12
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le25la642
Abstract: USP6947325 LE25LA642CS
Text: Ordering number : ENA1473 LE25LA642CS 64Kbit Serial SPI EEPROM SPI Bus Overview The LE25LA642CS is a 64Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
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ENA1473
LE25LA642CS
64Kbit
LE25LA642CS
NA1473-14/14
le25la642
USP6947325
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HT6264-70
Abstract: No abstract text available
Text: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • • • • Single 5V power supply Low power consumption – Operating: 200mW Typ. – Standby: 5µW (Typ.) 70ns (Max.) high speed access time Memory expansion by pin OE • Common I/O using tri-state outputs
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HT6264-70
200mW
28-pin
HT6264-70
536-bit
500mV
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USP6947325
Abstract: No abstract text available
Text: Ordering number : ENA1471 LE25LB642CT Serial SPI EEPROM SPI Bus (64Kbit) Overview The LE25LB642CT is a 64Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
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ENA1471
LE25LB642CT
64Kbit)
LE25LB642CT
64Kbit
NA1471-14/14
USP6947325
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L9002DX2
Abstract: CIRCUIT DIAGRAM of slot jammer L9320 2.4GHz Cordless Phone circuit diagram DX220 WR 137 antenna Voice encryption L9002VX2 12-bytes
Text: Preliminary Data Sheet SATURN-II L9002DX2 CD/SS Wireless packet and voice communication processor Table of Content 1. GENERAL DESCRIPTION .3
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L9002DX2
L9002DX2
CIRCUIT DIAGRAM of slot jammer
L9320
2.4GHz Cordless Phone circuit diagram
DX220
WR 137 antenna
Voice encryption
L9002VX2
12-bytes
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LE25LB643
Abstract: USP6947325
Text: Ordering number : ENA1342 LE25LB643 Serial SPI EEPROM SPI Bus (64Kbit) Overview The LE25LB643 is a 64Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
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ENA1342
LE25LB643
64Kbit)
LE25LB643
64Kbit
NA1342-14/14
USP6947325
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SCK 085
Abstract: USP6947325 1800H1FFFH
Text: 注文コード No.N A 1 3 4 2 LE25LB643 Serial SPI EEPROM SPI Bus (64Kbit) 概要 LE25LB643 はシリアルペリフェラルインターフェース(SPI)対応の 64Kbit EEPROM である。本製品は 三洋 CMOS EEPROM 技術を採用することにより、高速動作、高信頼性を実現している。また、インター
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LE25LB643
64Kbit)
64Kbit
USP6947325)
O2908
/20080926-S00003
A1342-1/16
SCK 085
USP6947325
1800H1FFFH
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2864b
Abstract: S-2860B S-2864B s286xb 2860B
Text: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.
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S-2860B/2864B
64k-bit
S-2860B
S-2864B
32byte
S-2864B:
28-pin
2864b
s286xb
2860B
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Untitled
Abstract: No abstract text available
Text: Rev.1.3_00 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.
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64k-bit
S-2860B/2864B
S-2860B
S-2864B
32byte
S-2860B:
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HY6264Alj-70
Abstract: hy6264a HY6264ALP-70
Text: HY6264A-0 Series • • H Y U N D A I 8Kx8bit CM OS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A-
HY6264A/
HY6264A-I
192x8-bits
HY6264A/HY6264A-I
-100mA
100mA
HY6264Alj-70
hy6264a
HY6264ALP-70
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Untitled
Abstract: No abstract text available
Text: HY6264A-0 Series • ' H Y U N D A I 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A-0)
HY6264A/
HY6264A-I
192x8-bits
HY6264A/HY6264A-I
-100mA
100mA
HY6264A-
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cdip28pin
Abstract: No abstract text available
Text: BR6265 BR6265 8KX8Bit64Ksram • £M5>r3E0/Dimensions Unit : mm BR6265 (i, 8 K X 8 tf CMOS X $ x -f "j v 0 RAM 7 t o TTL ¿ ¡ U g W ^ T '- T o h C M O S x /W ^ ic T ', $ » « ) £ £ 2 V IC T If T 1 9 - 2 JW S & T t i t c t b , A' 7 x U - a ' 7 7 T v -J
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BR6265
BR6265
AO--A12
cdip28pin
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HY6284A
Abstract: No abstract text available
Text: •HYUNDAI H Y 6 2 6 4 A - i 8Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A/
HY6264A-I
192x8-bits
HY6264A/HY6264A-I
HY6264A-
-100mA
100mA
28pin
HY6284A
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BR6265A-10LL
Abstract: BR6265A BR6265AF10LL BR6265AF-10LL BR6265A-10LL/BR6265AF-10LL
Text: BR6265A-10LL/BR6265AF-10LL BR6265A-10LL BR6265AF-10LL 8KX8Bit 64K SRAM • ^ JférfjiE l/D im en sio n s Unit : mm BR6265A/AF l i , 8 K X 8 t ' y h «IJ& <D CMOS 7, 9 x •i -j0 RAM T' t o A U flliT T L v 'J h CMOS 7*/^ ■ ÌX & W T', 2 V C " R i T b T - ? fr'fS ftT ' % 2 tz » , a' "jt U - /< y ?
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BR6265A-10LL/BR6265AF-10LL
BR6265A-10LL
BR6265AF-10LL
BR6265A/AF
BR6265A
BR6265AF10LL
BR6265AF-10LL
BR6265A-10LL/BR6265AF-10LL
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LM33256
Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Text: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns
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0QD75b3
150ns,
versionofLC3518B
ofLC3518B
ofLC3518BL
120ns,
LM33256
LM33256N
64K x 8 BIT DYNAMIC RAM
LM33256K
sanyo LC3564PL
lc3664* sanyo
LC324256 4m
static ram 8K
Static RAM
16k nmos dynamic ram
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p627
Abstract: 8Kx8bit
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S07-12501-4E 8-bit Proprietary Microcontroller F2MC-8L MB89620 Series MB89PV620 DESCRIPTION The MB89620 series has been developed as a general-purpose version of the F2MC*-8L family consisting of
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S07-12501-4E
MB89620
625/P625/W625/T625/V625/626/627/P627/W627
MB89PV620
F9602
p627
8Kx8bit
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Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE ^7 4825771 INTEGRATED 97 D DEVICE Integrated DeviceTechnolo3y. Inc. D e J MÖ2S771 □GG2bOE □ 02602 FAST CMOS REGISTERED EEPROM WITH SRC” 64K 8K x 8-BIT advance '"SSKSIK!! IDT78C564A FEATURES: DESCRIPTION: • 5 volt o n ly o pe ra tion
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2S771
IDT78C564A
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HT6264-70
Abstract: A12C
Text: HOLTEK H r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • Single 5V power supply Low power consum ption - O perating: 200mW Typ. - Stan dby: 5|iW (Typ.) 70ns (M ax.) high speed access tim e M em ory expan sion by pin OE • • • • • Com mon I/O u sin g tri-state outputs
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HT6264-70
200mW
28-pin
HT6264-70
536-bit
A12C
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tmm27256ad
Abstract: F000-FFFF TMP87P844N 87C844
Text: TO SHIBA TMP87P844 CM O S 8-BIT M ICRO CO NTRO LLER TMP87P844N The 87P844 are a One-Time PROM microcontroller with low-power 64K bits 8K bytes electrically programmable read only memory for the 87C444/844 system evaluation. The 87P844 is pin compatible with
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TMP87P844
TMP87P844N
87P844
87C444/844
87C444/844.
TMM27256AD
BM11108
F000-FFFF
TMP87P844N
87C844
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8Kx8bit
Abstract: No abstract text available
Text: • DESCRIPTION The MB89620R series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers. In addition to the RMC-8L CPU core which can operate at low voltage but at high speed, the microcontrollers
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MB89620R
F9703
8Kx8bit
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A12C
Abstract: HT6264-70
Text: HOLTEK& n r HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • O p e ra tin g voltage: 5V Low pow er consum ption - O peration: 200m W typ. - S tandby: 5(iW (typ.) 70ns (max.) high speed access tim e M em ory ex pansion by pin OE • • • • • P in -co m p atib le w ith s ta n d a rd 8Kx8
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HT6264-70
200mW
28-pin
HT6264-70
536-bit
A12C
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