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    88C5 Price and Stock

    Fix Supply 3188C5

    Shaker Screen Carriage Bolt - Sq
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    DigiKey 3188C5 80,000 250
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    Fix Supply 1488C5

    Shaker Screen Carriage Bolt - Sq
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    DigiKey 1488C5 55,000 400
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    TDK Epcos B41888C5477M000

    CAP ALUM 470UF 20% 25V RADIAL
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    DigiKey B41888C5477M000 Bulk 2,409 1
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    TME B41888C5477M000 12,000
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    JRH Electronics MS3188C55A

    CONNECTOR ACCESSORIES
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    DigiKey MS3188C55A Bulk 184 1
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    JRH Electronics MS3188C53N

    CONNECTOR ACCESSORIES
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    DigiKey MS3188C53N Bulk 100 1
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    88C5 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    88C50-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C51-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C52-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C53-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C54-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C5500 Marvell PRML Read Channel Physical Layer Device Original PDF
    88C55-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C56-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C57-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C58-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF
    88C59-AF5-R Unisonic Technologies BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR Original PDF

    88C5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    88C5200

    Abstract: 88C5520 marvell read channel "read channel" Marvell marvell viterbi 88C4200 marvell HARD DISK marvell "read channel" hard disk read channel
    Text: HighPHY Family 88C5500 and 88C5520 PRML Read Channel Physical Layer Devices Data Rates Up to 1.2 Gb/s, Combined with Target-Morphing™ Digital Signal Processing Technology, Enable Next-Generation Storage Solutions PRML Read Channel Physical Layer Devices


    Original     		PDF 88C5500 88C5520 88C5520 88C5200 marvell read channel "read channel" Marvell marvell viterbi 88C4200 marvell HARD DISK marvell "read channel" hard disk read channel

    Intel Stacked CSP

    Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
    Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology


    Original     		PDF 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Intel Stacked CSP transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160

    8E89

    Abstract: No abstract text available
    Text: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ


    Original     		PDF

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    M36L0T7050T2

    Abstract: M58LT128HB M58LT128HT M36L0t7050
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM


    Original     		PDF M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h M36L0T7050T2 M58LT128HB M58LT128HT M36L0t7050

    28F008C3

    Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode
    Text: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces


    Original     		PDF 32-MBIT 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 64-KB 28F008C3 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode

    ISL9504

    Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS


    Original     		PDF

    SOT23-5 AE31

    Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    rc28F640C3TC90

    Abstract: intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3
    Text: 3 Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming


    Original     		PDF 28F800C3, 28F160C3, 28F320C3, 28F640C3 32Kword rc28F640C3TC90 intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3

    Intel flash memory 292215

    Abstract: 8891 AP-658 88C0 88C1 88C2 88C3 88C4 88C5 AP-657
    Text: E AP-658 APPLICATION NOTE Designing for Upgrade to the 3 Volt Advanced+ Boot Block Flash Memory December 1998 NOTE: This document formerly known as Designing for Upgrade to the Advanced+ Boot Block Flash Memory. Order Number: 292216-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or


    Original     		PDF AP-658 28F800C3, 28F160C3, 28F320C3 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3 AP-657 Intel flash memory 292215 8891 AP-658 88C0 88C1 88C2 88C3 88C4 88C5

    117h68

    Abstract: CR10 J-STD-020B
    Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T1 M30L0R7000B1 54MHz 117h68 CR10 J-STD-020B

    M36L0T7060B

    Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
    Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory


    Original     		PDF M36L0T7060T2 M36L0T7060B2 M36L0T7060T2: 88C4h M36L0T7060B2: 88C5h M36L0T7060B M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7

    88C0

    Abstract: 88C1 88C2 88C3 88C4 88C5 AP-658 29221* intel
    Text: E AP-658 APPLICATION NOTE Designing for Upgrade to the Advanced+ Boot Block Flash Memory May 1998 Order Number: 292216-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF AP-658 16-Mbit 32-Mbit 88C0 88C1 88C2 88C3 88C4 88C5 AP-658 29221* intel

    CR10

    Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56
    Text: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR128GT M58LR128GB 54MHz CR10 J-STD-020B M58LR128GB M58LR128GT VFBGA56

    28F3202C3

    Abstract: 29066
    Text: PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 16-Mbit Flash + 4-Mbit SRAM - 28F1604C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 32-Mbit Flash + 2-Mbit SRAM - 28F3202C3 ! Flash Memory Plus SRAM


    Original     		PDF 16-Mbit 28F1602C3 32-Mbit 28F3204C3 28F1604C3 28F3202C3 16-Mb 32-Mb 28F3202C3 29066

    29064

    Abstract: No abstract text available
    Text: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  12 V for Fast Production Programming High Performance  2.7 V–3.6 V: 90 ns Max Access Time


    Original     		PDF 28F800C3, 28F160C3, 28F320C3 32-Kword 29064

    29066

    Abstract: No abstract text available
    Text: 3 Volt Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology


    Original     		PDF 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 16-Mbit 32-Mbit 32-Mbit/8-Mbit 32-Mbit/4-Mbit, 29066

    Hardlock

    Abstract: No abstract text available
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3372E Hardlock

    bsc 60h

    Abstract: AT49BV320C AT49BV320CT SA70 3372A
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF

    Micron MT2 cmos

    Abstract: 51240 jeida dram 88 pin DU35 Micron MT2
    Text: M T24D 88C51240 512K x 40. 1 MEG x 20 IC DRAM CARD |V llC = R O N IC DRAM CARD 2 MEGABYTES 512K x 40, 1 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC DRAM card • Polarized receptacle connector • Industry standard DRAM functions and timing


    OCR Scan     		PDF 88C51240 88-pin Micron MT2 cmos 51240 jeida dram 88 pin DU35 Micron MT2

    29064

    Abstract: No abstract text available
    Text: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier


    OCR Scan     		PDF 28F800C3, 28F160C3, 28F320C3 64-KB Consump001 28F160C3 29064

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 2.7 V or 1.65 V I/O Option Reduces Overall System Power


    OCR Scan     		PDF 32-MBIT 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 64-KB

    te28f160

    Abstract: t28f160
    Text: intei PRELIMINARY 2.4 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C2, 28F160C2, 28F320C2 x16 Flexible SmartVoltage Technology — 2.4 V-3.0 V Read/Program/Erase — 2.4 V or 1.65 V I/O Option Reduces Overall System Power — 12 V for Fast Production Programming


    OCR Scan     		PDF 28F800C2, 28F160C2, 28F320C2 64-KB Consumptio001 28F160C2 te28f160 t28f160