oms 450
Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
Text: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance
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2SK1086-M
SC-67
A2-132
oms 450
A2131
P channel MOSFET 10A schematic
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2SK1083-M
Abstract: No abstract text available
Text: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance
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2SK1083-M
SC-67
A2-126
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Untitled
Abstract: No abstract text available
Text: r r i \ [ LTC1286/LTC1298 TECHNOLOGY Micropower Sampling 12-Bit Serial I/O A/D Converters \ m A u g u s t 1993 F€ATUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1286/LTC1298 are micropower, 12-bit, sucessive approximation sampling A/D converters. They draw only
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LTC1286/LTC1298
12-Bit
LTC1286/LTC1298
12-bit,
100joA
LTC1286
LTC1298
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wt1e
Abstract: 2SK 93
Text: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof
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2SK1013-01
wt1e
2SK 93
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NI3T
Abstract: te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent
Text: 2SK1020 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •Voss —± 30V Guarantee ■Applications
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2SK1020
NI3T
te tfk
TFK 03 Diode
TFK U 111 B
A211-1
a1ae
2SK1020 equivalent
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D-12
Abstract: IRGBC20S vqe 23 VQE 24 vqe 24 d transistor CD 910
Text: PD - 9.687A International |k>r|Rectifier IRGBC20S INSULATED GATE BIPOLAR TRANSÌSTOR Standard Speed IGBT Features • Swiiching-loss rating includes all "tail" tosses • Optimized tor line frequency operation { to 400 Hz See Fig. 1 tor Current vs. Frequency curve
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IRGBC20S
O-220AB
D-12
vqe 23
VQE 24
vqe 24 d
transistor CD 910
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2SK 129 A
Abstract: 1085 MR A2129 2SK1085-MR A2128
Text: 2SK1085-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S • Features • Hicjh current • Low on-resistance • No secondary breakdown • Low driving power • Hich forward Transconductance ■Aoplications • Me tor controllers
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2SK1085-MR
SC-67
Tc-25Â
2SK 129 A
1085 MR
A2129
A2128
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VIP 100A
Abstract: 2SK2770-01 doom
Text: P U 2SK2770-01 J 1 E ïïïS D E N-channel MOS-FET 900V 5,5Q 3,5A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2770-01
VIP 100A
doom
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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siemens igbt BSM 150 gb 100 d
Abstract: CJ 53B siemens igbt BSM100GB160D csccn
Text: SIEMENS BSM 100 GB 160 D IGBT Module VCE= 1600 V 'c =2* 135 A at TC=25°c 'c = 2* 100 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half-bridge Type Ordering code BSM 100 GB 160D
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100gb16a
C67076-A2112-A2
20ki2
A23SbG5
flS35bD5
00b0S3S
BSM100GB160D
gm105270
023SbOS
siemens igbt BSM 150 gb 100 d
CJ 53B
siemens igbt
BSM100GB160D
csccn
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2SK1015-01
Abstract: mosfet 2sk
Text: 2SK1015-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V r,ss = ± 30V Guarantee
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2SK1015-01
2SK1015-01
mosfet 2sk
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2SK960
Abstract: 50N60 2SK960-MR
Text: 2SK960-MR FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hiijh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi<|h voltage ■Applications • Switching regulators
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2SK960-MR
SC-67
Tc-25Â
2SK960
50N60
2SK960-MR
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cc fuji
Abstract: 2SK2691-01R
Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2691-01R SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME DRAWNl CHECKED, I - APPROVED Fuji Electric Co.,Ltd. 1/0 Y 0?57-R-004a 1 1.Scope This specifies Fuji Power MOSFET 2SK2691-01R
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2SK2691-01R
57-R-004a
n957-R-0n3a
cc fuji
2SK2691-01R
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DIODE V97
Abstract: No abstract text available
Text: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .
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IRG4RC10UD
140ns
DIODE V97
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1da sot
Abstract: TZ404 TZ404BD TZ404CY
Text: T OP AZ SEMICONDUCTOR OSE D g Ü0G1ÜÛ7 5 | “ - T" 3S -2 S - - TI4G4 SEMICONDUCTOR N-CHANNiL EMHA^Ci^iNT-E^ODE D-MOS FIT ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TZ404BD TO-92 Plastic Package SOT-89 Surface Mount Package Description
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TZ404BD
OT-89
TZ404CY
80pSe
1da sot
TZ404
TZ404BD
TZ404CY
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Untitled
Abstract: No abstract text available
Text: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
4AS54S2
SMD-220
C-340
MA55452
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Untitled
Abstract: No abstract text available
Text: 2 SK 1 0 1 5-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ - F TT « r n I l S E - i r o m E o • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown
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KSD1
Abstract: ksd1 180 TC9327F SVFP-80PIN KSD1 65 l293 pin configuration
Text: TOSHIBA TC9327F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9327F DTS MICROCONTROLLER DTS-21 The TC9327F is a 4-bit CMOS microcontroller for single-chip digital tuning systems, featuring a built-in 230-MHz prescaler, PLL, and LCD drivers.
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TC9327F
DTS-21)
TC9327F
230-MHz
80-pin,
LQFP80-P-1212-0
KSD1
ksd1 180
SVFP-80PIN
KSD1 65
l293 pin configuration
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Untitled
Abstract: No abstract text available
Text: PD - 9.764 International @Rectifier IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPH40F
10kHz)
O-247AC
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transistor ge 703
Abstract: No abstract text available
Text: PD - 9.796A International ! or!Rectifier IRGBC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGBC30UD2
T0220A
5S452
002D41Ã
transistor ge 703
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Untitled
Abstract: No abstract text available
Text: F U JI 2SK2755-01 N-channel MOS-FET 450V 0,45Q 18A 125W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5
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2SK2755-01
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2sk mosfet
Abstract: 947-M 2sk 100a
Text: 2SK947-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES I Outline Drawings • Features • High speed switching • Low on-resistance 4 .5±02 032 / • No secondary breakdown 27±0 2 • Low driving power ÖÖ CM rO -H •H in D0®
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2SK947-M
SC-67
80jjs
947-M
2sk mosfet
947-M
2sk 100a
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P channel MOSFET 10A schematic
Abstract: N and P MOSFET
Text: 2SK1086-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • O utline D raw ings ■ Features • High current • Low o n-resistance • No secondary breakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce
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2SK1086-M
223fi
1086-M
P channel MOSFET 10A schematic
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: 2SK947-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • UPS • DC-DC converters • General purpose power amplifier
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2SK947-MR
53e8-7
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