DDD4425
Abstract: DDD4432 DDD443D
Text: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.
|
OCR Scan
|
PDF
|
5D-120
H04-004-07
0D04423
MS5F3515
H04-004-03
DDDMM33
0QD4143M
DDD4425
DDD4432
DDD443D
|
GDM207
Abstract: No abstract text available
Text: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.
|
OCR Scan
|
PDF
|
MS5F3686
223fl7c12
0G0420Q
MS5F3686
GDM207
|
ESAC92-03
Abstract: esac92
Text: ESAC92-03 10A • Outline Drawing l o w lo s s s u p e r high speed r e c t i f i e r ¿3 6 • 0 ? Connection Diagram ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching
|
OCR Scan
|
PDF
|
ESAC92-03
22387R2
0003AS2
00G3653
ESAC92-03
esac92
|
750a
Abstract: No abstract text available
Text: 1MBI750LN-060 750A Fuji Power Module IGBT MODULE ( L series) • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p plications • High Current for Motor Drive, such as Electric Vehicle • High Current Inverter • Uninterruptible Power Supply
|
OCR Scan
|
PDF
|
1MBI750LN-060
223fi7c
750a
|
1ZFL
Abstract: ERB91-02 ERB91
Text: ERB91-02 1A • Outline Drawing l o w lo s s s u p e r high speed r e c t i f i e r ■ Marking ■ Features • Lo w V f Color code : Silver • Super high speed switching • High reliability by planer design Abridged type name Voltage class ■ Applications
|
OCR Scan
|
PDF
|
ERB91-02
I40I50
0363b
1ZFL
ERB91-02
ERB91
|
DDD421S
Abstract: No abstract text available
Text: X SPEC 1 F 1 CATI ON DEVICE NAME : I G BT TYPE NAME : 1MB 3 0 - SPEC. No. ; DATE : 0 6 0 M S 5 F 3 5 2 3 J u n .-2 5 -1 9 9 6 F u j i T h is S p e c ific a tio n DATE DRAW N CHECKED NAME E l e c t r i c C o. L td. is s u b je c t to change w ith o ut not ice.
|
OCR Scan
|
PDF
|
MS5F3523
H04-004-07
0GD4211
H04-004-03
M21cl
DGGM22D
H04-004-03
DDD421S
|
ESJA52-10A
Abstract: 00047-5-1
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage sili con d iode ESJA52-1OA made by FLU I ELECTR1C CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION His diode shall be marked with Cathode Mark and Lot No.
|
OCR Scan
|
PDF
|
ESJA52-10A
223fi7
000475Q
ESJA52QUA
00047-5-1
|
ERC80M-004
Abstract: 8f diode
Text: ERC80M-004 5 a S C H O T T K Y BARRIER DIODE : Features • S i* ''* £ * * £ Insulated package by fu lly m o ld in g . • te V F Low V F C onnection D iagram S uper hig h speed s w itc h in g . H ig h re lia b ility b y p la n e r d e s ig n . : A pplications
|
OCR Scan
|
PDF
|
ERC80M-004
500ns
I-125
8f diode
|
FUJI IGBT 100A
Abstract: No abstract text available
Text: 2-Pack IGBT 1200 V 100 A FUJI IGBT MODULE L series O utline D raw ings • Features • High Speed Sw itching • Low Saturation Voltage • Voltage Drive ■ A p p lic a tio n s • Inverter for Motor Drive • AC and DC Servo Drive Am plifier • Uninterruptible Power Supply
|
OCR Scan
|
PDF
|
Weigh0-300
223fl7T2
000S130
FUJI IGBT 100A
|
6mbp75ra060
Abstract: IGBT FF 300 MTT 95 A 12 N KAE x1 MTT 65 A 12 N 300V power amplifier JT-100
Text: O U U V /Z O A /O in one-package I G B T - I P M M • *8 R s e r i e s 6MBP75RA060 Features • f e m & t 'j- y • IP M -N '> V- X t 5 & 1 4 0 & -3 A- > >r - v • I G B T * 7 7<D Tj t t U a S f t f t K t t f f i C : J: 5 « • rt $ iJ ® [U K W g S o aQ^ S W * i | i i ^ j ^ l c i
|
OCR Scan
|
PDF
|
6MBP75RA060
Vet-15V
DQD5S77
6mbp75ra060
IGBT FF 300
MTT 95 A 12 N
KAE x1
MTT 65 A 12 N
300V power amplifier
JT-100
|
P channel MOSFET 10A schematic
Abstract: N and P MOSFET
Text: 2SK1086-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • O utline D raw ings ■ Features • High current • Low o n-resistance • No secondary breakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce
|
OCR Scan
|
PDF
|
2SK1086-M
223fi
1086-M
P channel MOSFET 10A schematic
N and P MOSFET
|
Untitled
Abstract: No abstract text available
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR
|
OCR Scan
|
PDF
|
2SK1089
2SK15Q8
2SK1389
2SK1390R
2SK2049
2SK1087MR
2SK1817MR
2SK2446-01
2SK2050
2SK1506
|
6MBP100NA060
Abstract: 6MBP100NA060-01 555 igbt driver Tra 1120 r
Text: . l , ì • „ ± I G M $ B T - I P N y , 6 0 0 V U - 7 6 M / 1 0 0 A B P 1 / 6 N A ® 6 - 1 Features • V7 ■ M . v -igy-f X \ ‘ r ljia $ § 1 4 • Low switching-surge and noise • Low power loss • High reliability ■ Maximum ratings and characteristics
|
OCR Scan
|
PDF
|
00V/100A/6M
6MBP100NA060-01
D0D5443
E23fi7TE
6MBP100NA060
6MBP100NA060-01
555 igbt driver
Tra 1120 r
|
Untitled
Abstract: No abstract text available
Text: J. SPECI F 1CAT 10 N DEVICE NAME : TYPE NAME : 1 M B H 2 5 - 1 20 SPEC. No. : M S 5 F 3 5 3 1 DATE : Jun. -25-1996 1G BT F u j i E l e c t r i c C o. Ltd. T h is S p e c if ic a t io n is su b je c t to change w ithout n otice. N AM E DATE APPROVED DRAWN
|
OCR Scan
|
PDF
|
|
