LCX374
Abstract: 74LCX374 74LCX374MSA 74LCX374MSAX 74LCX374SJ 74LCX374SJX 74LCX374WM 74LCX374WMX
Text: LCX374 N ß a t i o n a l S e m i c o n d u c t o r 74LCX374 Low-Voltage Octal D Flip-Flop with 5V Tolerant Inputs and Outputs General Description Features The LCX374 consists of eight D-type flip-flops featuring sep arate D-type inputs for each flip-flop and TRI-STATE out
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74LCX374
LCX374
74LCX374
74LCX374MSA
74LCX374MSAX
74LCX374SJ
74LCX374SJX
74LCX374WM
74LCX374WMX
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Untitled
Abstract: No abstract text available
Text: r r i \ [ LTC1286/LTC1298 TECHNOLOGY Micropower Sampling 12-Bit Serial I/O A/D Converters \ m A u g u s t 1993 F€ATUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1286/LTC1298 are micropower, 12-bit, sucessive approximation sampling A/D converters. They draw only
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LTC1286/LTC1298
12-Bit
LTC1286/LTC1298
12-bit,
100joA
LTC1286
LTC1298
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA
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M27C256B
10OjiA
M27C256B
TSOP28
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tcnl 100
Abstract: No abstract text available
Text: / T _ LT1210 u TECHNOLOGY r m 1.1 A, 35M Hz C u rre n t F e e d b a c k A m p lifie r F€OTUR€S DCSCRIPTIOn • 1.1A Minimum Output Drive Current ■ 35MHz Bandwidth, Ay = 2, RL = 10Q ■ 900V/,us Slew Rate, Ay = 2, RL = 10i2 The LT 1210 is a current feedback amplifier with high
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LT1210
35MHz
LT1210
LT1206
LT1227
100V/ns
LT1360
50MHz,
00V/ns
000pF
tcnl 100
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Untitled
Abstract: No abstract text available
Text: um LT1311 TECHNOLOGY Q uad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for O ptical Disk Drives F€fflUR€S D € S C R IP T IO n • Four Complete Current-to-Voltage Converters ■ 14-Lead Small Outline Package ■ Accurate Gain: 20mV/|jA, ±4%
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LT1311
12MHz,
145ns
14-Lead
250nA
12MHz
250ns
LT1113
LT1169
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B00ST1
Abstract: M21 diode NDS8926
Text: ra E ^ E L E Â S E LTC1702/LTC1703 L ir m TECHNOLOGY Dual 550kHz Synchronous 5V-to-2.x/l .xV Switching Regulator Controllers with VID D ecem ber 1998 F € f ìT U R € S D C S C R IP T IO n • Two Independent Controllers in One Package ■ LTC1703 Side 1 Output Is Compliant with the Intel
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LTC1702/LTC1703
550kHz
LTC1703
100mA
LTC1702.
B00ST1
M21 diode
NDS8926
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Royer oscillator circuit diagram
Abstract: 0465R LT1786F smb pig tail sda 2023 b MOSFET Royer oscillator 1733G
Text: TECHNOLOGY SM BusProgrom m oble CCFL Sw itching R egulator to-lamp-current control” and communicates using the 2-wire SMBus serial interface. The LT1786F acts as an SMBus slave device using one of two selectable SMBus addresses set by the address pin ADR.
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LT1786F
100kHz
24kHz,
200kHz
200kHz,
500kHz
Royer oscillator circuit diagram
0465R
smb pig tail
sda 2023 b
MOSFET Royer oscillator
1733G
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Untitled
Abstract: No abstract text available
Text: LT1529 r r u n LT1529-3.3/LT 1529-5 m TECHNOLOGY 3A Low D ro p o u t R egulators w ith M ic ro p o w e r Q u ie s c e n t C urrent a n d S hutdow n K R T U IK S DCSCRIPTIOn • Dropout Voltage: 0.6V at Iout = 3A ■ Output Current: 3A ■ Quiescent Current: 50uA
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LT1529
LT1529-3
1529/LT1529-3
3/LT1529-5
O-220
T0-220
T0-100
T0-101
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Untitled
Abstract: No abstract text available
Text: ED5, ED9, ED 10, ED11 ED 15 & ì Supertex inc. Progammable Encoder/Decoder Ordering Information Package Device Plastic DIP #Pins ED5 ED5P (18) ED9 ED9P (18) ED10 J-Lead PLCC (#Pins) — ED11P (28) ED15 ED15P (28) — Die — ED9WG (20) — — ED10WG (20)
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ED15P
ED10WG
ED11P
ED11WG
ED15PJ
ED15WG
ED15X
18-pin
20-pin
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Quad buffer/line driver 3-State 74LV126 FEATURES DESCRIPTION • Wide operating voltage: 1.0 to 5.5 V The 74LV126 is a low-voltage Si-gate C M O S device that is pin and function compatible with 74HC/HCT126. • Optimized for low voltage applications: 1.0 to 3.6 V
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74LV126
74LV126
74HC/HCT126.
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Untitled
Abstract: No abstract text available
Text: IM U M L EELEÂ1E Final Electrical Specifications H i LT1317/LT1317B m TECHNOLOGY M icro p o w er 600kHz PWM DC/DC Converters January 1998 FCRTURCS D C S C R IP TIO n • 100uA Quiescent Current ■ Operates with Vm as Low as 1.5V ■ 600kHz Fixed Frequency Operation
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LT1317/LT1317B
600kHz
100uA
LT1317)
LT1317B)
300mV
500mA
LT1307/LT1307B
1317/LT1317B
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Untitled
Abstract: No abstract text available
Text: •’ V I * -1 o J0 9 3 u m TECHNOLOGY ■ Slew Rate ■ Gain-Bandwidth Product 50V/jas Typ 23MHzTyp The LT1215 is a dual, single supply precision op amp with a 23MHz gain-bandwidth product and a 50V/ns slew rate. The LT1216 is a quad version of the same amplifier. The
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23MHzTyp
LT1215
23MHz
LT1216
200jxV
250ns
480ns
450jaV
120nA
600nA
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Untitled
Abstract: No abstract text available
Text: u im TECHNOLOGY LT13 0 7/LT13 0 7B Single Cell Micropower 600kHz PWM DC/DC Converters FCflTURCS D C S C R IP T IO n • Uses Small Ceramic Capacitors ■ 50jjA Quiescent Current LT1307 ■ 1m A Quiescent Current (LT1307B) ■ Operates with V|N as Low as 1V
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7/LT13
600kHz
50jjA
LT1307)
LT1307B)
295mV
500mA
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led 30w
Abstract: preheat
Text: UNITECH SYSTEMS INC. / LC LED INC. 258 50 Street, 3rd Floor Brooklyn NY 11220 Tel: 718.567.0070 Fax: 718.491.1379 www.lc-led.com 500TSW4DA Super White Soldering Solder Dipping • Pre-Heat: 100°C Max. 30W Max. Soldering Iron • Pre-Heat Time: 60 seconds
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500TSW4DA
led 30w
preheat
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Infrared photodiode preamplifier
Abstract: No abstract text available
Text: u im _LT1319 TECHNOLOGY Multiple M odulation Standard Infrared Receiver F€RTUR€S DCSCRIPTIOn • Receives Multiple IR Modulation Methods ■ Low Noise, High Speed Preamp: 2pA/VHz, 7MHz ■ Low Frequency Ambient Rejection Loops ■ Dual Gain Channels: 8MHz, 400V/V
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LT1319
00V/V
TN0201T
BPW34FA
BPV22NF
Infrared photodiode preamplifier
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Untitled
Abstract: No abstract text available
Text: SÔE D • O K I b ? 2 4 2 4 G GD 1 3 4 b l 4T7 H O K I J S E M I C O N D U C T O R GROUP O K I semiconductor_ MSM 28 F 101_ _ 1 M BIT 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION T h e M S M 2 8 F 1 01 is a high speed 12 8 K x 8-bit Flash erasable and electrically reprogram m able
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3N172
Abstract: 3N172-73 3N173 X3N172-73
Text: caloric Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 3N172/3N173 A B S O L U T E M A X IM U M R A TIN G S T a = 2 5 °C unless otherwise specified FE A TU R E S • H igh In put Im p e d a n c e • D iod e P ro te cte d G ate
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3N172/3N173
1503Z
3N172
3N173
-10mA
200ns
M43S2
3N172
3N172-73
3N173
X3N172-73
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