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    7N10L Search Results

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    7N10L Price and Stock

    Rochester Electronics LLC RFD7N10LE

    N-CHANNEL POWER MOSFET
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    DigiKey RFD7N10LE Bulk 5,942 606
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    Rochester Electronics LLC FQPF7N10L

    MOSFET N-CH 100V 5.5A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF7N10L Tube 5,887 1,025
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    Rochester Electronics LLC FQI7N10LTU

    MOSFET N-CH 100V 7.3A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI7N10LTU Tube 4,000 952
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    onsemi FQT7N10LTF

    MOSFET N-CH 100V 1.7A SOT223-4
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    DigiKey FQT7N10LTF Cut Tape 378 1
    • 1 $0.71
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    FQT7N10LTF Reel 4,000
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    FQT7N10LTF Digi-Reel 1
    • 1 $0.71
    • 10 $0.616
    • 100 $0.4268
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    Avnet Americas FQT7N10LTF Ammo Pack 53 Weeks, 6 Days 1
    • 1 $0.738
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    FQT7N10LTF Reel 26 Weeks 4,000
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    FQT7N10LTF Reel 26 Weeks 4,000
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    Mouser Electronics FQT7N10LTF 51,735
    • 1 $0.71
    • 10 $0.591
    • 100 $0.418
    • 1000 $0.304
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    Bristol Electronics FQT7N10LTF 1
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    TME FQT7N10LTF 3
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    • 100 $0.426
    • 1000 $0.384
    • 10000 $0.335
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    Richardson RFPD FQT7N10LTF 4,000
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    Avnet Asia FQT7N10LTF 26 Weeks 4,000
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    New Advantage Corporation FQT7N10LTF 116,000 1
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    onsemi FQP7N10L

    MOSFET N-CH 100V 7.3A TO220-3
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    DigiKey FQP7N10L Tube
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    Find more 7N10L price and stock on Findchips.com

    7N10L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    7N10LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N10LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N10LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N10LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    7N10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7n10l

    Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
    Text: 7N10LE, 7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334

    7n10l

    Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
    Text: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF QW-R502-394

    7n10le

    Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
    Text: S E M I C O N D U C T O R February 1994 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected


    Original     		PDF RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 1-800-4-HARRIS 7n10le AN7254 AN7260 RFD7N10LE pspice model for ttl TC247

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF QW-R502-394

    7n10l

    Abstract: UTC 7N10G-AA3-R 7n10
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF QW-R502-394 7n10l UTC 7N10G-AA3-R 7n10

    7n10l

    Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
    Text: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF OT-223 O-252 O-251 QW-R502-394

    7n10l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and


    Original     		PDF QW-R502-394 7n10l

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    7N10LE

    Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
    Text: 7N10LE, 7N10LESM, 7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFD7N10LE, RFD7N10LESM, RFP7N10LE 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 7N10LE FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13

    7n10l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF OT-223 O-252D O-251 O-252 QW-R502-394 7n10l

    Untitled

    Abstract: No abstract text available
    Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB


    OCR Scan     		PDF 430Z271 RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 184e-9

    Untitled

    Abstract: No abstract text available
    Text: 7N10LE, 7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 75e-3

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S 7N10LE, 7N10LESM, 7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM, RFP7N10LE 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5)

    FP7N10LE

    Abstract: JEDEC TO-251AA RFD7N10LE RFP4N05L RFP4N06L RFD7N10LESM 7n10l
    Text: RFP4N05L RFP4N06L Harris A u g u s t 19 91 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T0-220A B TOP VIEW • 4A, 5 0 V and 60 V • rD S {0 N ) = ° - 8 n DRAIN (FLANGE) • Design O ptim ized for 5 V G a te Drives • Can b e D riven D irectly from Q M O S, NM O S, T T L Circuits


    OCR Scan     		PDF RFP4N05L RFP4N06L MiL-STD-883, FP7N10LE JEDEC TO-251AA RFD7N10LE RFD7N10LESM 7n10l

    7n10l

    Abstract: RFD7N10LESM9A
    Text: in terrii 7N10LE, 7N10LESM D ata S h e e t 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power M O S F E T s are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM AN7254 AN7260. 7n10l RFD7N10LESM9A

    pspice model for ttl

    Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
    Text: m HARRIS 7N10LE, 7N10LESM 7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFP7N10LE 1e-30 13e-3 pspice model for ttl 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10