7n10le
Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
Text: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM FP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected
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PDF
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RFD7N10LE,
RFD7N10LESM
RFP7N10LE
O-220AB
O-251AA
RFD7N10LESM
RFP7N10LE
1-800-4-HARRIS
7n10le
AN7254
AN7260
RFD7N10LE
pspice model for ttl
TC247
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7N10LE
Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
Text: RFD7N10LE, RFD7N10LESM, FP7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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Original
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PDF
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RFD7N10LE,
RFD7N10LESM,
RFP7N10LE
184e-9
1e-30
13e-3
74e-8)
45e-3
68e-5)
7N10LE
FP7N10LE
RFD7N10LESM9A
TO-220 package thermal resistance
pspice model for ttl
RFD7N10LE
RFD7N10LESM
RFP7N10LE
TB334
TC1-1-13
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Untitled
Abstract: No abstract text available
Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM FP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB
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OCR Scan
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PDF
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430Z271
RFD7N10LE,
RFD7N10LESM
RFP7N10LE
O-220AB
O-251AA
RFD7N10LESM
RFP7N10LE
184e-9
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FF175
Abstract: 268E-5
Text: RFD7N10LE, RFD7N10LESM, FP7N10LE H A R R IS S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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PDF
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RFD7N10LE,
RFD7N10LESM,
RFP7N10LE
07e-14
37e-2
72e-3
59e-6
84e-8)
32e-1
50e-4
FF175
268E-5
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Untitled
Abstract: No abstract text available
Text: P *3 3 S RFD7N10LE, RFD7N10LESM, FP7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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OCR Scan
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PDF
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RFD7N10LE,
RFD7N10LESM,
RFP7N10LE
184e-9
1e-30
13e-3
74e-8)
45e-3
68e-5)
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FP7N10LE
Abstract: JEDEC TO-251AA RFD7N10LE RFP4N05L RFP4N06L RFD7N10LESM 7n10l
Text: RFP4N05L RFP4N06L Harris A u g u s t 19 91 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T0-220A B TOP VIEW • 4A, 5 0 V and 60 V • rD S {0 N ) = ° - 8 n DRAIN (FLANGE) • Design O ptim ized for 5 V G a te Drives • Can b e D riven D irectly from Q M O S, NM O S, T T L Circuits
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OCR Scan
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PDF
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RFP4N05L
RFP4N06L
MiL-STD-883,
FP7N10LE
JEDEC TO-251AA
RFD7N10LE
RFD7N10LESM
7n10l
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pspice model for ttl
Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Text: m HARRIS RFD7N10LE, RFD7N10LESM FP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q
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OCR Scan
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PDF
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RFD7N10LE,
RFD7N10LESM
RFP7N10LE
O-220AB
O-251AA
RFP7N10LE
1e-30
13e-3
pspice model for ttl
7n10l
FP7N10LE
268E-5
TC1-1-13
358e9
pspice model for CMOS
TRS-10
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