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    7N10 Search Results

    7N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H7N1005LD-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 15A 110Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    H7N1004LSTR-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 30A 35Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    H7N1004FM-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 25A 35Mohm To-220Fm Visit Renesas Electronics Corporation
    H7N1005DSTR-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 12A 110Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    H7N1004AB-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 30A 35Mohm To-220Ab Visit Renesas Electronics Corporation
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    7N10 Price and Stock

    YAGEO Corporation RC0075JS-7N10KL

    RES 10K OHM 5% 0.02W 0075
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    DigiKey RC0075JS-7N10KL Cut Tape 20,000 1
    • 1 $0.58
    • 10 $0.309
    • 100 $0.1825
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    RC0075JS-7N10KL Reel 20,000 20,000
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    Ozdisan Elektronik RC0075JS-7N10KL
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    Laird, A DuPont Business TYS60284R7N-10

    FIXED IND 4.7UH 3.08A 30MOHM SMD
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    DigiKey TYS60284R7N-10 Cut Tape 7,990 1
    • 1 $0.49
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    TYS60284R7N-10 Digi-Reel 7,990 1
    • 1 $0.49
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    TYS60284R7N-10 Reel 6,000 2,000
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    Sager TYS60284R7N-10 2,500
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    Infineon Technologies AG BSC027N10NS5ATMA1

    MOSFET N-CH 100V 23A/100A TSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC027N10NS5ATMA1 Reel 5,000 5,000
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    Bristol Electronics BSC027N10NS5ATMA1 5,000
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    EBV Elektronik BSC027N10NS5ATMA1 21 Weeks 5,000
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    New Advantage Corporation BSC027N10NS5ATMA1 20,000 1
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    Win Source Electronics BSC027N10NS5ATMA1 17,000
    • 1 -
    • 10 $6.5
    • 100 $4.334
    • 1000 $4.334
    • 10000 $4.334
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    Vishay Dale NTHS0805N17N1003JE

    THERM NTC 100KOHM 4064K 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTHS0805N17N1003JE Cut Tape 3,810 1
    • 1 $1.71
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    • 100 $1.0468
    • 1000 $0.82056
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    NTHS0805N17N1003JE Digi-Reel 3,810 1
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    NTHS0805N17N1003JE Reel 2,000 2,000
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    RS NTHS0805N17N1003JE Bulk 2,000
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    onsemi NVMYS007N10MCLTWG

    PTNG 100V LL LFPAK4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NVMYS007N10MCLTWG Digi-Reel 2,960 1
    • 1 $2.77
    • 10 $1.757
    • 100 $1.2233
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    NVMYS007N10MCLTWG Cut Tape 2,960 1
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    Avnet Silica NVMYS007N10MCLTWG 17 Weeks 3,000
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    Find more 7N10 price and stock on Findchips.com

    7N10 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7N-10.000MBP-T TXC Crystals, Oscillators, Resonators - Oscillators - XTAL OSC TCXO 10.0000MHZ CMOS Original PDF
    7N10070005 TXC XTAL OSC TCXO 10.0MHZ CMOS Original PDF
    7N10LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N10LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N10LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N10LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    7N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF QW-R502-394

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF QW-R502-394

    7n10l

    Abstract: UTC 7N10G-AA3-R 7n10
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF QW-R502-394 7n10l UTC 7N10G-AA3-R 7n10

    7N10

    Abstract: UTC 7N10G-AA3-R 39-4B
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and


    Original     		PDF QW-R502-394 7N10 UTC 7N10G-AA3-R 39-4B

    7N10

    Abstract: UTC 7N10G-AA3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and


    Original     		PDF QW-R502-394 7N10 UTC 7N10G-AA3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF OT-223 O-252 O-251 QW-R502-394

    7N10

    Abstract: UTC 7N10G-AA3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and


    Original     		PDF QW-R502-394 7N10 UTC 7N10G-AA3-R

    7n10l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and


    Original     		PDF QW-R502-394 7n10l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar


    Original     		PDF 7N10Z 7N10Z QW-R502-762

    7n10l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe


    Original     		PDF OT-223 O-252D O-251 O-252 QW-R502-394 7n10l

    7n10l

    Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
    Text: 7N10LE, 7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334

    7n10l

    Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
    Text: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334

    2N1025

    Abstract: 2N1026 2N1469 2N327A
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N935 — 2N936 — 2N937 — 2N938 — 2N939 — 2N940 — GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTORS 2N327A 2N328A 2N329A


    Original     		PDF 2N935 2N936 2N937 2N938 2N939 2N940 2N327A 2N328A 2N329A 2N1025 2N1025 2N1026 2N1469 2N327A

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA mosfet structure

    7n10l

    Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
    Text: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD7N10LE, RFD7N10LESM 7n10l 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334

    SOT89 MARKING CODE

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A07Z ADVANCE INFORMATION 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID max


    Original     		PDF ZXMN10A07Z AEC-Q101 DS33565 SOT89 MARKING CODE

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V : RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA

    Untitled

    Abstract: No abstract text available
    Text: 7N10F7 N-channel 100 V, 0.027 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID 7N10F7 100 V 0.035 Ω 7A • N-channel enhancement mode 3 • Lower RDS(on) x area vs previous generation


    Original     		PDF STL7N10F7 DocID025972

    Untitled

    Abstract: No abstract text available
    Text: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB


    OCR Scan     		PDF 430Z271 RFD7N10LE, RFD7N10LESM RFP7N10LE O-220AB O-251AA RFD7N10LESM RFP7N10LE 184e-9

    Untitled

    Abstract: No abstract text available
    Text: 7N10LE, 7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFD7N10LE, RFD7N10LESM 184e-9 1e-30 13e-3 74e-8) 45e-3 68e-5) 75e-3

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    diode gee a9

    Abstract: HTC one m7
    Text: SPP 7N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level


    OCR Scan     		PDF 47N10L SPP47N10L SPB47N10L P-T0220-3-1 Q67040-S4177 P-T0263-3-2 Q67040-S4176 S35bQ5 Q133777 SQT-89 diode gee a9 HTC one m7