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    74 LS 138 APPLICATIONS Search Results

    74 LS 138 APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OMAP5910JZVL2 Texas Instruments Applications processor Visit Texas Instruments Buy
    OMAP5910JGVL2 Texas Instruments Applications processor Visit Texas Instruments Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy

    74 LS 138 APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    351AL

    Abstract: DSP811 74 LS 138 applications dps8l DPS 138
    Text: DPS8 Series Pushwheel Switches, Mini, Rear Mount MATERIAL SPECIFICATIONS The DPS8 Series is a compact, lower cost family of instrument grade, pushbutton code switches for numerical input applications. DPS8 models are similar in size to those of the SMCD Series and


    Original     		PDF 301LS 351AL DSP811 74 LS 138 applications dps8l DPS 138

    AURIX

    Abstract: TC275T TC233LP-32F200 XC2289H XC2368E
    Text: Microcontroller Pocket Guide www.infineon.com/microcontrollers N 1x USART, 1x SSC F, B, K F, B, K 1x USART Additional Features/ Additional Features/ Remarks Remarks N 1 1x USART PG-MQFP-80 OTP Packages 1 N Packages N N 1 Temperature Ranges Temperature Ranges


    Original     		PDF PG-MQFP-80 C505CA-4EM/-LM B158-H9157-G6-X-7600 AURIX TC275T TC233LP-32F200 XC2289H XC2368E

    BK377

    Abstract: No abstract text available
    Text: VOLTAGE CONTROLLED OSCILLATORS Surface Mount LINEAR TUNING 12.5 to 3000 MHz ROS JTOS Typ. Typ. Typ. Typ. Max. Typ. V Nom. (mA) Max. Note B C O N N E C T I O N 0.03 0.06 0.15 0.6 0.8 0.02 0.04 0.11 0.2 0.3 1.0–4.0 2.0–2.6 2.8–4.0 3.7–4.8 5.8– 6.7


    Original     		PDF JTOS-25 JTOS-50 JTOS-75 JTOS-100 JTOS-150 JTOS-200 JTOS-300 JTOS-400 JTOS-535 JTOS-765 BK377

    Untitled

    Abstract: No abstract text available
    Text: 138 AVG Semiconductors_ DDiT Technical Data DV74LS138 DV74ALS138 3 Line to 8 Line Decoder/Demultiplexer These Schottky-clamped circuits are designed to be used in high-performance memory-decoding or data-routing applications requiring very short propagation delay times. One of eight lines


    OCR Scan     		PDF DV74LS138 DV74ALS138 DV74LS138, LS138 ALS138 1-800-AVG-SEMI

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189

    64LS138

    Abstract: No abstract text available
    Text: S N 5 4 LS 13 8 , SN 54S138, S N 74 LS 13 8 , S N 74 S 13 8 A 3-LINE TO 8-LINE D EC OD ERS/DEM U LTIPLEXERS DECEMBER 1972 —REVISED MARCH 1988 Designed Specifically for High-Speed: Memory Decoders Data Transmission Systems I I 3 Enable Inputs to Simplify Cascading


    OCR Scan     		PDF 54S138, 64LS138

    al 232 nec

    Abstract: NE64400 NE644 NE64408 S21E
    Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors


    OCR Scan     		PDF b427414 NE64400 NE64408 NE644 gain60 al 232 nec NE64408 S21E

    NE70083

    Abstract: 2SK353 DS 3107 NE700 2sk mesfet 1S121 2sk 353
    Text: N E C / CALIFORNIA 1SE NEC D fa427414 O G O l b S l 1 T - 3 1-2 5 " LOW NOISE Ku-K BAND GaAs MESFET NE700 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW C O S T The NE700 is a low cost GaAs FET featuring low noise figures and high associated gains thru 18 GHz.


    OCR Scan     		PDF fa427414 NE700 NE70000 NE70083. NE70083-4 NE70083 2SK353 DS 3107 2sk mesfet 1S121 2sk 353

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		PDF L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857

    ZD75-0524

    Abstract: ZT60-522 ZS-30 ZS150-36 Lambda Electronics zs50 lambda zs150-15 ZD30 zs30-12 ZD75-0512 zs150
    Text: Port I —AC-to-PC Power Supplies LAMBDA'S AND Z SERIES Ideal For High Volume, Low Cost Office Automation Applications The requirements for reliability and cost effectiveness are no longer mutually exclusive in office automation, point of sale equipment and other high volume applications.


    OCR Scan     		PDF 10Wto 85-132VAC 85-132/170-250VAC ZS-10 ZS-15 ZS-30 ZS-50 ZS-75 ZS-100 ZS-150 ZD75-0524 ZT60-522 ZS150-36 Lambda Electronics zs50 lambda zs150-15 ZD30 zs30-12 ZD75-0512 zs150

    MRF5711L

    Abstract: BF430L BF430
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5711L BF430L* The RF Line N P N Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in the high-gain, lo w -n oise sm all-sign al am plifiers for operation u p to 3.5 GHz. A ls o u sab le in applications requiring fast sw itching


    OCR Scan     		PDF MRF5711L BF430L* igh49 BF430L BF430

    2SC1253

    Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
    Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for


    OCR Scan     		PDF MS7414 NE74000 NE74014 NE74020 NE740 E90115 NE74014 2SC12579 2SC1253 E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733

    NE41607

    Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
    Text: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e


    OCR Scan     		PDF b427mM NE416 NE41635 DE161 NE41607 NC921 Z171 NE41600 2SC2025 50m1n NE41615 Z128

    2SK609

    Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08
    Text: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ­ ated gain thru K-band by employing a recessed 0.3 micron


    OCR Scan     		PDF 0QDlb27 NE710 NE71000 NE71000) 2SK609 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08

    block diagram of 74LS138 3 to 8 decoder

    Abstract: block diagram of 74LS138 1 line to 16 line TTL 74ls138 74LS138 74LS138 3 to 8 74LS138 application note 74LS138 pin configuration 74LS138 3 to 8 decoder Pin of 74LS138 3 to 8 decoder 74ls138 3-8
    Text: GD54/74LS138 3-TO-8-LINE DECODERS/DEMULTIPLEXERS Feature • Pin Configuration • D esigned Specifically for High S p e e d M em ory D ec o d e rs and Data Transm ission System s Incorporate 3 Enable Inputs to Simplify Cascading • A N D /O R Data R eception


    OCR Scan     		PDF GD54/74LS138 block diagram of 74LS138 3 to 8 decoder block diagram of 74LS138 1 line to 16 line TTL 74ls138 74LS138 74LS138 3 to 8 74LS138 application note 74LS138 pin configuration 74LS138 3 to 8 decoder Pin of 74LS138 3 to 8 decoder 74ls138 3-8

    Untitled

    Abstract: No abstract text available
    Text: Applications H igh Slew R a te .30V//ys • Data A c q u is itio n System s • Fast S e ttlin g . 330ns • R.F. A m p lifie rs •


    OCR Scan     		PDF 330ns 500KHz

    NE202

    Abstract: NE20300 NE20383A
    Text: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN


    OCR Scan     		PDF b4E7414 NE20300 NE20383A NE203 NE202, NE202 NE20383A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL IGBT SGH40N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


    OCR Scan     		PDF SGH40N60UFD

    2SK280

    Abstract: NE13783 NE13700 NE13783-4 NE13783S RF MESFET S parameters
    Text: L N E C / 1SE D CALIFORNIA NEC • b427414 Q0G1SÖS 7^3h l S 1 LOW NOISE Ku-BAND G aAs MESFET NE13700 NE13783 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fMAx: 80 G H z The NE137 features low noise figure and high associated gain • L O W N O IS E F IG U R E


    OCR Scan     		PDF NE13700 NE13783 NE137 NE13700) NE13783) NE13783 2SK280 NE13783-4 NE13783S RF MESFET S parameters

    2SK609

    Abstract: No abstract text available
    Text: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY


    OCR Scan     		PDF NE710 NE71000) E71083 E71084 b4275E5 NE71000 NE71000L NE71000M 2SK609

    NE243187

    Abstract: NE243188
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499

    2SK609

    Abstract: NE71084 NE71000M
    Text: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05


    OCR Scan     		PDF NE710 E71000) E71083 app48 NE71000 NE71000L NE71000M NE71000N 2SK609 NE71084

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300) channe49 lS21l IS12I

    Untitled

    Abstract: No abstract text available
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted


    OCR Scan     		PDF CF003 CF003-03 CF003 CF003-01 n745D3