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    International Power Sources

    Abstract: LWE2025R
    Text: T -3 3 -0 5 LWE2025R / \ PHILIPS INTERNATIONAL 5bE D • 711Dfl5b DDMbSTfc. 35fl BiPHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon p ow er tra n sisto r fo r use in a co m m o n -e m itte r,cla ss-A a m p lifie r up to 2.3 G H z in CW c o n d itio n s in m ilita ry and professional applications.


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    PDF 33-OS LWE2025R 7110fl5b FO-93) MCD656 T-33-05 International Power Sources LWE2025R

    collision

    Abstract: NE8392C NE8392CA NE8392CN NE83C92 NE83Q92 NE83Q93 "network interface controller"
    Text: INTEGRATED CIRCUITS NE8392C Coaxial transceiver interface for Ethernet/Thin Ethernet Product specification 1995 May 1 IC19 Philips Sem iconductors PHILIPS 711Dfl5b □Dflclö?D =JD1 Philips Semiconductors Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet


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    PDF NE8392C SD00283 NE8392C OT261-3 MO-047AB 7110A2L collision NE8392CA NE8392CN NE83C92 NE83Q92 NE83Q93 "network interface controller"

    1641A

    Abstract: 74ABT245 74ABT374 74ABT646 74ABT646D 74ABT646DB 74ABT646N 74ABT646 Philips
    Text: PHILIPS INTERNATIONAL bSE D • 711Dfl5b □□5754b 3bD ■ PHIN Philips Sem iconductors Advanced BiCMOS Products Product specification Octal bus transceiver/register 3-State — 74ABT646 — — — — —— — QUICK REFERENCE DATA FEATURES . Combines 74ABT245 and 74ABT374


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    PDF 7110fl2b 005754b 74ABT646 74ABT245 74ABT374 64mA/-32mA 500mA 74ABT646 74ABT 1641A 74ABT646D 74ABT646DB 74ABT646N 74ABT646 Philips

    K 192 A transistor

    Abstract: BUK438-500B
    Text: bSE D PHILIPS INTERNATIONAL m 711Dfl5b DGbBTBl ÖTE « P H I N Product Specification Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 711Dfl2b 0Db3T31 BUK438-500B 7110flSL K 192 A transistor BUK438-500B

    ic TT 2222

    Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
    Text: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.


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    PDF 711005b 00b3432 BLW98 D0b344D ic TT 2222 transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98

    as6 diode

    Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
    Text: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier


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    PDF BYX96 BS9331-F129 BYX96-300 BYX96-300R 1600R. i-oi-19 7110fl2b as6 diode diode as6 BYX96-300U

    BD201F

    Abstract: BDX77F BD203F BD202F BD204F BDX78F
    Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


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    PDF BD201F; BD203F; BDX77F 7110a2b T-33-0 OT186 BD202F, BD204F BDX78F. BD201F BDX77F BD203F BD202F BDX78F

    semiconductor LINEAR

    Abstract: NE529 0405B IN914 NE529D NE529N OTO70
    Text: Product specification Philips Semiconductor* Unear Products Voltage comparator NE529 PIN CONFIGURATIONS DESCRIPTION The NE529 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with the conventional linear process. This allows simultaneous


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    PDF NE529 NE529 711Dfl5b 007fib73 semiconductor LINEAR 0405B IN914 NE529D NE529N OTO70

    DH47

    Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
    Text: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power


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    PDF BUK541-100A/B -SOT186A BUK571-100A/B DH47 BUK571 BUK571-100A BUK571-100B buk541-100 K571

    transistor 45 f 122

    Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
    Text: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X


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    PDF BFQ32C OT173 OT173X BFP96. 711002b OT173. D0M542fl transistor 45 f 122 BFQ32C SOT173 GHz PNP transistor BFP96

    M1434

    Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
    Text: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no


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    PDF BTV58 T0-220AB BTV58â 1000R 711005b 00S30TM M1434 Gate Turn-Off Thyristors LS025 BTV58-600R 600R CG10A 1000R

    3067

    Abstract: BD677A BD679A BD675A BD676A BD678A BD680A
    Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification Silicon Darlington power transistors PHILIPS INTERNATIONAL D ESCRIPTION 711002b 004BT7S bBl WÊ PHIN r -3 3 -z * f Q U IC K R E F E R E N C E DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a


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    PDF BD675A/BD677A/BD679A O-126 BD676A, BD678A BD680A 711002b 004BT7S BD675A BD677A 3067 BD677A BD679A BD675A BD676A

    74f162 pc

    Abstract: 74f162 U5033 74F160A 74F161A 74F162A 74F163A F161A F163A N74F160AN
    Text: PHILIPS INTERNATIONAL Philips Semiconduciors-SIgneHcs Document No. 853-0347 ECN No. 0347 Date of issue October 7,1988 Status Product Specification S fiE I • T H O S E b 0 0 5 1 1 3 2 TS b IPHIN FAST 74F160A,74F161 A 74F162A,74F 163A Counters ’F160A, 'F162A BCD Decade Counter


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    PDF F160A 7110fiEb 0DSn32 74F160A 74F162 74F163A F160A, F162A F161A, F163A 74f162 pc U5033 74F161A 74F162A F161A N74F160AN

    circuit diagram of rc transmitter and receiver

    Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
    Text: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS


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    PDF SC68C562 SC68C562 circuit diagram of rc transmitter and receiver philips e3 Philips KS capacitors SC68C562C1N SCN68562

    BYX38-300

    Abstract: BYX38 BYX38-300R iC-NC BYX38/300 T0117
    Text: BYX38 SERIES SbE D PHILIPS INTERNATIONAL • 711QÛ2b D D M l b m 3TT ■ P H I N T - 0 M 7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:


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    PDF BYX38 711QflSb BYX38-300 BYX38-300R 1200R. 10-32UNF iC-NC BYX38/300 T0117

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


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    PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    MCB770

    Abstract: DIP28 MAB8048 PCA3351C PCA3351CP PCA3352C PCA3352CP PCA3353C PCD33XXA S52 EEPROM
    Text: Product specification Philips Semiconductors 8-bit microcontroller with DTMF generator PCA3351C; PCA3352C; and 128 bytes E E P R O M _ PCA3353C CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION


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    PDF PCA3351C; PCA3352C; PCA3353C MCB770 DIP28 MAB8048 PCA3351C PCA3351CP PCA3352C PCA3352CP PCA3353C PCD33XXA S52 EEPROM

    SR 4216 D TRANSISTOR SWITCHING

    Abstract: SR 4216 D TRANSISTOR CXA 1376 "Pager receiver" CTC 1351 CTC 1351 transistor CXA 1364 transistor ctc 1351 uaa2083 173 MHz RF receiver
    Text: Productspecification Philips Semiconductors Advanced pager receiver UAA2080 FEATURES G ENERAL DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2080 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and


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    PDF UAA2080 PCA5000A, PCF5001 PCD5003 TQFP32; 7110fi5ti MLCZ39 SR 4216 D TRANSISTOR SWITCHING SR 4216 D TRANSISTOR CXA 1376 "Pager receiver" CTC 1351 CTC 1351 transistor CXA 1364 transistor ctc 1351 uaa2083 173 MHz RF receiver

    P80CL580

    Abstract: P80CL580HFT XTAL18 invertor 80C51 P83CL580 P83CL580HFT philips 3b8 26
    Text: Philips Semiconductors Product specification Low voltage 8-bit microcontrollers P80CL580; P83CL580 CONTENTS 15 l2C-BUS SERIAL I/O Serial Control Register S1CON Serial Status Register (S1STA) Data Shift Register (S1 DAT) Address Register (S1 ADR) 1 FEATURES


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    PDF P80CL580; P83CL580 P80CL580 711Gfl2b P80CL580 P80CL580HFT XTAL18 invertor 80C51 P83CL580 P83CL580HFT philips 3b8 26

    PCD3351AP

    Abstract: MAB8048 PCD3351A PCD3352A PCD3353A PCD33XXA
    Text: Philips Semiconductors Preliminary specification Single-chip 8-bit Telecom Microcontroller c FEATURES • 8-bit CPU, ROM, RAM, I/O in a single 28-lead package • 2 k ROM bytes; 64 RAM bytes PCD3351A • 4 k ROM bytes; 128 RAM bytes (PCD3352A) • 6 k ROM bytes; 128 RAM bytes (PCD3353A)


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    PDF PCD3351A/52A/53A 28-lead PCD3351A) PCD3352A) PCD3353A) MAB8048) 7110BEL PCD3351AP MAB8048 PCD3351A PCD3352A PCD3353A PCD33XXA

    12MHz

    Abstract: 80C31 instruction set 87C51 80C31 80C51 8XC51 SC87C51CYF40 SI 1020H SC80C31BCGA44 zt 751
    Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 80C31/80C51/87C51 PIN CONFIGURATIONS The Philips 80C31/80C51/87C51 is a high-performance microcontroller fabricated with Philips high-density CMOS technology. The CMOS 8XC51 is functionally compatible with the


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    PDF 80C31/80C51/87C51 80C31/80C51 /87C51 8XC51 80C51) 87C51) 16-bit SQT307-2 711062b 12MHz 80C31 instruction set 87C51 80C31 80C51 SC87C51CYF40 SI 1020H SC80C31BCGA44 zt 751

    bvc62

    Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
    Text: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum


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    PDF BLV859 OT262B 711002b OT262B. 711Dfi5b bvc62 transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330

    OLS 049

    Abstract: MS-012AC TEA1113 TEA1113T microphone preamp agc
    Text: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1113 FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The T E A 1113 is a bipolar integrated circuit that performs


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    PDF TEA1113 711005b 0Cm473 OLS 049 MS-012AC TEA1113 TEA1113T microphone preamp agc

    XTAL18 OSCI CRYSTAL

    Abstract: P80CL580 invertor 80C51 P80CL580HFH P80CL580HFT P83CL580 P83CL580HFT philips d2r XTAL18 OSCI CRYSTAL 12 mhz
    Text: Philips Semiconductors Product specification Low voltage 8-bit microcontrollers P80CL580; P83CL580 CONTENTS 15 l 2 C-BUS SERIAL I/O Serial Control Register S1CON Serial Status Register (S1STA) Data Shift Register (S1 DAT) Address Register (S1ADR) 2 .1 ROMIess version: P80CL580


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    PDF P80CL580; P83CL580 P80CL580 711002b 010cJb2cà XTAL18 OSCI CRYSTAL invertor 80C51 P80CL580HFH P80CL580HFT P83CL580 P83CL580HFT philips d2r XTAL18 OSCI CRYSTAL 12 mhz