Untitled
Abstract: No abstract text available
Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.
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BDT65F;
BDT65AF
BDT65BF;
BDT65CF
7110flSb
BDT65F
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ltd133
Abstract: 7 segments display philips LTD133F-21 12 pin 7 segment clock Liquid Crystal 12 pin 4 digit 7 segment display
Text: PHILIPS INTERNATIONAL Data sheet status Product specification date of issue July 1990 . bOE 7110flSb 0 D 5 7 0 2 5 7' 4 LTD133 Ü51 IPHIN /S t Liquid crystal display DEVICE DESCRIPTION The LTD133 is a 3 1/2-digit 7 segment clock display with AM and PM functions. It is designed for use with the
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LTD133
7110flSb
0D57025
LTD133
PCF1175
7Z22271
LTD133F-21
LTD133F-21
7 segments display philips
12 pin 7 segment clock Liquid Crystal
12 pin 4 digit 7 segment display
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NDS 40-20
Abstract: BUK437-500B DIODE BB2
Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK437-500B
NDS 40-20
BUK437-500B
DIODE BB2
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tam s8
Abstract: C101 LTA343F-11 LTA343R-11
Text: PHILIPS INTERNATIONAL Data sheet status Pro du ct specification date of issue J u ly 1990 bOE D I 7110flSb 0 0 5 7 G 1 3 30T LTA343 Liquid Crystal Display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTA343 is a 40-character, 2-line dot matrix display. Typical applications include hand held equipment and
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LTA343
7110flSb
0057G13
LTA343
40-character,
160x27
7110a2b
tam s8
C101
LTA343F-11
LTA343R-11
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transistor tt 2222
Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and
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711002b
BLY87C
transistor tt 2222
Trimmer 10-60 pf
transistor h 1061
15 w RF POWER TRANSISTOR NPN
bly87c
IEC134
yl 1060
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b57 diode
Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
Text: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES
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7110flSb
0G410bD
BR211
BR211-100
b57 diode
M3245
M3244
diode 1123 07s
M3243
BI 1123
M324
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BLX13
Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested
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711005t.
BLX13
r-33-//
BLX13
BLX13A
C 3311 transistor
HF band power amplifier
philips 3h1
transistor f
PH ON 823
philips Fxc 3 b
SOT-56
transistor c 1971
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2N3020
Abstract: 2N3019
Text: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter
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2N3019
2N3020
7110flSb
711002b
00M2fci42
2N3020
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MPS3640
Abstract: No abstract text available
Text: Philips Sem iconductors_ 7- 3 7 - 1/ PNP 1 GHz switching transistor PHILIPS INTERNATIONAL DESCRIPTION Product specification 5bE D • -^ MPS3640 7110flSb D D M b D b T Sbfl ■ P H I N PINNING PNP general purpose switching
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-r-37-V
MPS3640
7110fiSb
MPS3640
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Untitled
Abstract: No abstract text available
Text: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.
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BDT60F;
BDT60AF
BDT60BF;
BDT60CF
7110flSb
OT186
BDT61F,
BDT61AF,
BDT61BF
BDT61CF.
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dd1041
Abstract: 74ABT244 74ABT244D 74ABT244DB 74ABT244N 74ABT244PW
Text: INTEGRATED CIRCUITS 7 4 A B T 2 4 4 Octal buffer/line driver 3-State Product specification 1995 May 22 IC23 Philips Semiconductors PHILIPS P H ILIP S 7110flSb 00^0407 TT1 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors FAST Products
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74ABT244
7110flSb
64mA/-32mA
500mA
74ABT244
OT360-1
MO-153AC
dd1041
74ABT244D
74ABT244DB
74ABT244N
74ABT244PW
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BFG741
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFG741 SbE D • 7110flSb DÜMS3S7 bTl IPHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base
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BFG741
7110flSb
OT223
BFG741
OT223.
25K/W
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PLCC28
Abstract: TDA8718 TDA8718K IRT 1250
Text: IN TE G R A TE D C IR C U ITS IM T R ^ S P E E T TD A8718 8-bit high-speed analog-to-digital converter Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS t 7110flSb 0073701 1T1 •
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TDA8718
7110flSb
TDA8718
7110fl2b
PLCC28
TDA8718K
IRT 1250
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h1a11
Abstract: 74ABT16
Text: INTEGRATED CIRCUITS 74ABT16244-1 16-bit buffer/line driver with 30Q series termination resistors 3-State Product specification 1995 Apr 11 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 7110flSb O O i n n s TDS • ' Philips Semiconductors Product specification
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74ABT16244-1
16-bit
74ARTifi9dd
A/-32mA
500mA
7110fl2b
OT362-1
h1a11
74ABT16
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TDA8708T
Abstract: TDA8708 IEC134 S028 "Digital Comparator" 3117 3/TDA8708
Text: Philips Product specification T - 7 7 -0 7 -1 3 Video analog input interface TDA8708 PHILIPS INTERNATIONAL SbE D • 7110flSb 0D370L.1 Hbb ■ P H I N FEATURES GENERAL DESCRIPTION • 8-bit resolution
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TDA8708
0D370L
TDA8708
003707b
TDA8708T
IEC134
S028
"Digital Comparator"
3117
3/TDA8708
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TIP29F
Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.
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TIP29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
7110flSb
OT186
TIP30F,
TIP30AF,
TIP30BF,
TIP29F
TIP30CF
TIP29AF
TIP29BF
TIP29CF
TIP29DF
TIP30AF
TIP30BF
TIP30DF
TIP30F
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BUK545
Abstract: BUK545-60A BUK545-60B
Text: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
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7110ASfc.
BUK545-60A/B
OT186
BUK545
10CHXh
ID/100
BUK545-60A
BUK545-60B
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2N930 NPN transistor FREE
Abstract: 2n930
Text: 2N930 1 * 2 * - PHILIPS INTERNATIONAL 5LE D n _j L 7110flSb DDM25ti2 GST M P H I N N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise amplifier appli
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2N930
7110flSb
10itA
711DflSb
T-29-17
2N930 NPN transistor FREE
2n930
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12 pin 4digit 7 segment display
Abstract: glass lcd multimeter LCD 7 segment display with 13 pins 4-DIGIT 7-SEGMENT LTD242R-12 Philips 3.5 digit 7 segment lcd display LTD242R-22 4 digit 7 segment lcd display 40 pin LTD242F-22 40 PIN 4 digit lcd display
Text: PHILIPS INTERNATIONAL bOE J> m 7110flSb D0570Ô4 bbT Philips Components_ D ata sheet status P ro du ct specification d a te of issue July 1990 LTD242 IPHIN T - its t Liquid crystal display DEVICE DESCRIPTION The LTD242 is a 4-digit, 7-segment multi-function LCD.
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7110flEb
0D570Ã
LTD242
LTD242R-12
LTD242R-22
LTD242F-22
LTD242F-22
12 pin 4digit 7 segment display
glass lcd multimeter
LCD 7 segment display with 13 pins
4-DIGIT 7-SEGMENT
Philips 3.5 digit 7 segment lcd display
4 digit 7 segment lcd display 40 pin
40 PIN 4 digit lcd display
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BFQ233
Abstract: BFQ253A BFQ233A BFQ253
Text: Product specification Philips Sem iconductors NPN 1 GHz video transistors PHILIPS INTERNATIONAL DESCRIPTION BFQ233; BFQ233A SbE I> m 7110flSb 00455^0 Tûb • PHIN PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a
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T-33-05
BFQ233;
BFQ233A
7110fl2b
BFQ253
BFQ253A
MBB634
BFQ233
BFQ233A
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BUK445-100A
Abstract: BUK445-100B BT diode BUK445
Text: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies
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BUK445-100A/B
-SOT186
BUK445-100A
BUK445-100B
BT diode
BUK445
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str x 6556
Abstract: STR 6556 str w 6556 schematic digital sound processor UFN 432 TDA 810 amplifier audio crossover filter eao 02 SERIES extra bass circuit diagram n621
Text: INTEGRATED CIRCUITS m w m •I i n BITSTREAM CONVERSION TDA1546T Bitstream Continuous Calibration DAC with digital sound processing BCC-DAC Preliminary specification File under Integrated Circuits, IC01 January 1995 Philips Semiconductors PHILIPS 7110flSb OOfiblSB 764
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TDA1546T
7110flSb
VD1/pp40
711Dfi2h
str x 6556
STR 6556
str w 6556
schematic digital sound processor
UFN 432
TDA 810 amplifier
audio crossover filter
eao 02 SERIES
extra bass circuit diagram
n621
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BUK445-100A
Abstract: 1E05 BUK445 BUK445-100B
Text: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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7110flSb
BUK445-1OOA/B
-SOT186
BUK445
-100A
-100B
BUK445-100A
1E05
BUK445-100B
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BUK454-500B
Abstract: 1S93 DM 321 diode 1S93
Text: PHILIPS INTERNATIONAL bSE D • 7110flSb DObHObl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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711DflSh
BUK454-500B
-T0220AB
BUK454-500B
1S93
DM 321
diode 1S93
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