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    640 SMD TRANSISTOR MARKING Search Results

    640 SMD TRANSISTOR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    640 SMD TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking gB

    Abstract: diode sy 171 smd transistor 2300 SMD led warm white sy 171 smd transistor marking SG diode sy 104 smd diode marking sG 640 smd transistor marking transistor smd marking blue
    Text: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD High Brightness WU-M-359 • self-adhesive rear side • lead-free soldered LEDLine Flex SMD High Brightness GB 1/4 July, 2010


    Original     		PDF WU-M-359 smd transistor marking gB diode sy 171 smd transistor 2300 SMD led warm white sy 171 smd transistor marking SG diode sy 104 smd diode marking sG 640 smd transistor marking transistor smd marking blue

    sot89 TRANSISTOR MARKING AV

    Abstract: 640 smd transistor marking ma2580 SmD TRANSISTOR av smd transistor marking Av aW sot89 2SB804 smd transistor marking 26 hFE CLASSIFICATION Marking marking AW
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB804 Features World standard miniature package:SOT-89 High collector to base voltage:VCBO -100V Excellent DC current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SB804 OT-89 -100V -500mA, -50mA sot89 TRANSISTOR MARKING AV 640 smd transistor marking ma2580 SmD TRANSISTOR av smd transistor marking Av aW sot89 2SB804 smd transistor marking 26 hFE CLASSIFICATION Marking marking AW

    MARKING SMD PNP TRANSISTOR BV

    Abstract: TRANSISTOR SMD BV 640 smd transistor marking BV SMD PT-200 2SB624
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SB624 OT-23 200TYP. -100mA) MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV 640 smd transistor marking BV SMD PT-200 2SB624

    transistor SMD DK

    Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SB798 OT-89 -100mA) 100TYP. transistor SMD DK dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798

    2SD596

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SD596 OT-23 200TYP. 100mA) 2SD596

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R310E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R310E6 1Description ThinPAK8x8


    Original     		PDF IPL65R310E6 IPL65R310E6

    IPL65R660E6

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R660E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R660E6 1Description ThinPAK8x8


    Original     		PDF IPL65R660E6 IPL65R660E6

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD 1Description


    Original     		PDF IPL65R725CFD

    SMD Transistor g15

    Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3
    Text: SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3

    Untitled

    Abstract: No abstract text available
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    SMD Transistor g22

    Abstract: 04N80C3 04N80
    Text: SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD04N80C3 PG-TO252-3 04N80C3 SMD Transistor g22 04N80C3 04N80

    04N80C3

    Abstract: SMD Transistor g22 JESD22 SPD04N80C3 640 smd transistor marking
    Text: SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD04N80C3 PG-TO252-3 04N80C3 04N80C3 SMD Transistor g22 JESD22 SPD04N80C3 640 smd transistor marking

    02N80C3

    Abstract: No abstract text available
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description


    Original     		PDF IPL65R210CFD

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R340CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R340CFD 1Description


    Original     		PDF IPL65R340CFD IPL65R340CFD

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R420E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R420E6 1Description ThinPAK8x8


    Original     		PDF IPL65R420E6

    65E6190

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R190E6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R190E6 1Description ThinPAK8x8


    Original     		PDF IPL65R190E6 65E6190

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R460CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R460CFD 1Description


    Original     		PDF IPL65R460CFD

    Untitled

    Abstract: No abstract text available
    Text: SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 9 Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD04N80C3 PG-TO252-3 04N80C3

    Untitled

    Abstract: No abstract text available
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    MOSFET 17N80c3

    Abstract: 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47
    Text: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPB17N80C3 PG-TO263 17N80C3 MOSFET 17N80c3 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47

    02N80C3

    Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c

    Untitled

    Abstract: No abstract text available
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    SMD Transistor g15

    Abstract: transistor A25 SMD transistor SMD g15
    Text: SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15