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    02N80C Search Results

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    02N80C Price and Stock

    Infineon Technologies AG SPD02N80C3ATMA1

    MOSFET N-CH 800V 2A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD02N80C3ATMA1 Reel 2,500 2,500
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    • 10000 $0.47025
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    SPD02N80C3ATMA1 Cut Tape 2,404 1
    • 1 $1.8
    • 10 $1.147
    • 100 $0.7719
    • 1000 $0.5588
    • 10000 $0.5588
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    SPD02N80C3ATMA1 Digi-Reel 1
    • 1 $1.8
    • 10 $1.147
    • 100 $0.7719
    • 1000 $0.5588
    • 10000 $0.5588
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    Avnet Americas SPD02N80C3ATMA1 Reel 4 Weeks 1
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    SPD02N80C3ATMA1 Reel 15 Weeks 2,500
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    • 10000 $0.54219
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    Mouser Electronics SPD02N80C3ATMA1 55,747
    • 1 $0.82
    • 10 $0.754
    • 100 $0.65
    • 1000 $0.498
    • 10000 $0.47
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    Newark SPD02N80C3ATMA1 Cut Tape 1
    • 1 $1.29
    • 10 $0.999
    • 100 $0.802
    • 1000 $0.517
    • 10000 $0.517
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    Rochester Electronics SPD02N80C3ATMA1 580 1
    • 1 $0.5486
    • 10 $0.5486
    • 100 $0.5157
    • 1000 $0.4663
    • 10000 $0.4663
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    Chip1Stop SPD02N80C3ATMA1 20,000
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    • 10000 $0.438
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    SPD02N80C3ATMA1 Cut Tape 2,500
    • 1 -
    • 10 $0.559
    • 100 $0.552
    • 1000 $0.538
    • 10000 $0.534
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    SPD02N80C3ATMA1 1,410
    • 1 $0.8107
    • 10 $0.7207
    • 100 $0.6087
    • 1000 $0.4486
    • 10000 $0.4486
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    EBV Elektronik SPD02N80C3ATMA1 5,000 16 Weeks 2,500
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    New Advantage Corporation SPD02N80C3ATMA1 15,000 1
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    • 10000 $0.6214
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    Infineon Technologies AG SPA02N80C3XKSA1

    MOSFET N-CH 800V 2A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA02N80C3XKSA1 Tube 500
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    • 1000 $0.74518
    • 10000 $0.74518
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    Infineon Technologies AG SPP02N80C3XKSA1

    MOSFET N-CH 800V 2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP02N80C3XKSA1 Tube
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    Infineon Technologies AG SPD02N80C3BTMA1

    MOSFET N-CH 800V 2A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD02N80C3BTMA1 Digi-Reel
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    SPD02N80C3BTMA1 Cut Tape
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    SPD02N80C3BTMA1 Reel
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    Infineon Technologies AG SPD02N80C3

    N-CH 800V 2A 2700mOhm TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rutronik SPD02N80C3 Reel 2,500 2,500
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    • 10000 $0.4537
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    CoreStaff Co Ltd SPD02N80C3 7,500
    • 1 $0.953
    • 10 $0.789
    • 100 $0.577
    • 1000 $0.561
    • 10000 $0.561
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    Find more 02N80C price and stock on Findchips.com

    02N80C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02N80C3

    Abstract: JESD22 PG-TO220-3 SPA02N80C3
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA02N80C3 PG-TO220-3 02N80C3 02N80C3 JESD22 PG-TO220-3 SPA02N80C3

    02N80C3

    Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    C2625

    Abstract: 02N80C3 02N8
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP02N80C3 PG-TO220-3 02N80C3 C2625 02N80C3 02N8

    02N80C3

    Abstract: JESD22 PG-TO220-3 SPP02N80C3 02N8
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP02N80C3 PG-TO220-3 02N80C3 02N80C3 JESD22 PG-TO220-3 SPP02N80C3 02N8

    02N80C3

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3

    SPD02N80C3

    Abstract: 02N80C3 Q67040-S4635 55-AK
    Text: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code


    Original     		PDF SPD02N80C3 P-TO252-3-1 Q67040-S4635 02N80C3 SPD02N80C3 02N80C3 Q67040-S4635 55-AK

    02N80C3

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA02N80C3 PG-TO220-3 02N80C3 02N80C3

    02N80C3

    Abstract: No abstract text available
    Text: 02N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 02N80C3

    02N80C3

    Abstract: Transistor d12 t DS800 SPA02N80
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA02N80C3 PG-TO220-3 02N80C3 100ain 02N80C3 Transistor d12 t DS800 SPA02N80

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    MAX7523

    Abstract: 02N80C3 02N8
    Text: 02N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 MAX7523 02N80C3 02N8

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    02N80C3

    Abstract: Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8
    Text: 02N80C3 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 2.7 Ω ID 2 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


    Original     		PDF SPP02N80C3 SPA02N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4432 02N80C3 02N80C3 Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8

    02N80C3

    Abstract: SPP02N80C3 Q67040-S4432
    Text: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 02N80C3 SPP02N80C3 Q67040-S4432

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type Package


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3