Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD596 Search Results

    2SD596 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SD596(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD596-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD596A-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD596-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SD596 Price and Stock

    Samtec Inc ESQT-110-02-S-D-596

    FLEXYZ FLEXIBLE-HEIGHT SOCKET ST
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESQT-110-02-S-D-596 Bulk 1
    • 1 $9.52
    • 10 $9.52
    • 100 $9.52
    • 1000 $9.52
    • 10000 $9.52
    		Buy Now
    Avnet Americas ESQT-110-02-S-D-596 Bulk 1
    • 1 $6.53
    • 10 $6.04
    • 100 $4.06
    • 1000 $4.06
    • 10000 $4.06
    		Buy Now
    Mouser Electronics ESQT-110-02-S-D-596
    • 1 $6.53
    • 10 $6.04
    • 100 $4.06
    • 1000 $2.62
    • 10000 $1.66
    		Get Quote
    Master Electronics ESQT-110-02-S-D-596
    • 1 -
    • 10 $8.07
    • 100 $4.61
    • 1000 $2.87
    • 10000 $1.81
    		Buy Now

    Samtec Inc ESQT-110-02-S-D-596-003

    FLEXYZ FLEXIBLE-HEIGHT SOCKET ST
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESQT-110-02-S-D-596-003 Bulk 1
    • 1 $9.9
    • 10 $9.9
    • 100 $9.9
    • 1000 $9.9
    • 10000 $9.9
    		Buy Now
    Avnet Americas ESQT-110-02-S-D-596-003 Bulk 1
    • 1 $6.75
    • 10 $6.24
    • 100 $4.22
    • 1000 $4.22
    • 10000 $4.22
    		Buy Now
    Master Electronics ESQT-110-02-S-D-596-003
    • 1 -
    • 10 $8.39
    • 100 $4.79
    • 1000 $3.01
    • 10000 $1.93
    		Buy Now

    NEC Electronics Group 2SD596-T1B(DV3)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD596-T1B(DV3) 713
    • 1 $0.66
    • 10 $0.66
    • 100 $0.297
    • 1000 $0.198
    • 10000 $0.198
    		Buy Now

    NEC Electronics Group 2SD596-T1B(DV4)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD596-T1B(DV4) 2,096
    • 1 $0.55
    • 10 $0.55
    • 100 $0.55
    • 1000 $0.22
    • 10000 $0.22
    		Buy Now

    NEC Electronics Group 2SD596-T1B(DV5)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD596-T1B(DV5) 2,328
    • 1 $0.6
    • 10 $0.6
    • 100 $0.6
    • 1000 $0.18
    • 10000 $0.12
    		Buy Now
    Find more 2SD596 price and stock on Findchips.com

    2SD596 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD596 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SD596 Kexin NPN Silicon Epitaxial Transistor Original PDF
    2SD596 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD596 NEC Semiconductor Selection Guide Original PDF
    2SD596 TY Semiconductor NPN Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SD596 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD596 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD596 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD596 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD596 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD596 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD596 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD596 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD596 NEC AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD Scan PDF
    2SD596DV1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD596DV1 NEC Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SD596DV2 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD596DV2 NEC Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SD596DV3 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD596DV3 NEC Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor Mini Mold Scan PDF

    2SD596 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB624

    Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4
    Text: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596


    Original     		PDF 2SB624 OT-23 hFE200 -100mA) 2SD596 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV4 2SB624-BV5 2SB624 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4

    BV4 pnp

    Abstract: BV4 transistor 2SB624 2SD596
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ

    2SD596

    Abstract: No abstract text available
    Text: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF 2SD596 OT-23 OT-23 MIL-STD-202E 2SD596

    2SD596

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original     		PDF 2SD596 OT-23 200TYP. 100mA) 2SD596

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR（NPN ） ＳＯＴ－２３－３ Ｌ FEATURES １．ＢＡＳＥ ２．ＥＭＩＴＴＥＲ Power dissipation PCM : 0.2 W（Tamb=25℃）


    Original     		PDF OT-23-3L 2SD596 037TPY 950TPY 700REF 028REF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA 700mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ

    2SB624

    Abstract: 2SD596 BV4 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA) 2SD596. -100mA -700mA -700mA, -70mA -10mA 2SB624 2SD596 BV4 transistor

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624

    sot-23 bv4

    Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4

    hFE-200 transistor PNP

    Abstract: 2SB624
    Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624

    D1802

    Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
    Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)


    Original     		PDF 2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier

    2SD596A

    Abstract: transistor DV3 D1788 2SB624
    Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)


    Original     		PDF 2SD596A 2SB624 2SD596A transistor DV3 D1788

    transistor dv4

    Abstract: 2SD596 10MHZ 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA) 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SD596 10MHZ 2SB624

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SD596 OT-23 200TYP. 100mA)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA

    transistor dv4

    Abstract: transistor DV3 2SD596 SOT23-3L
    Text: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 2SD596 OT-23-3L OT-23-3L 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 SOT23-3L

    2SD596

    Abstract: D1298 SSA250 transistor dv4
    Text: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.


    OCR Scan     		PDF 2SD596 2SD596 D1298 SSA250 transistor dv4

    transistor DV3

    Abstract: 2sd 596 2sd59
    Text: S IL IC O N T R A N S IS T O R 2SD596 A U D IO FREQ U ENCY PO W ER A M P L IF IE R N P N S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N PACKAGE DIMENSIONS The 2 S D 5 9 6 is designed for use in small type equipm ents especially recom ­


    OCR Scan     		PDF 2SD596 2SD596 transistor DV3 2sd 596 2sd59

    2SD1810

    Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
    Text: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5


    OCR Scan     		PDF 2SC4210 2SD596 2SC2618 2SD1328 2SC4209 2SD780A 1782K 2SC4209 2SD602A 2SD1810 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145

    mg30g1bl3

    Abstract: 2SD472 MG30GIBL3 2SC2603 2SD610 2SC3170 2SC1815 2sc2238 2SC2603 F 2sd882 hitachi
    Text: - 218 - m « Type No. 2SD 602 , 2SD 605 j 2SD 606 2SD 608 rJ 610 612 612K 613 ✓ 614 617 / 2SD 619 2SD 620 2SD 622 2SD 628H 2S0 623 2SD 632 2SD 633 2SD 634 637 638 639 641 643 644 3 2SC3330 2SC1815 2SD776 S £ -y-y'ry v-ytr > = 8 2SD596 B aZ HITACHI 2SC2618


    OCR Scan     		PDF 2SD602 2SD602A 2SD603 2SD604 2SD605 2SD606 2SD608 2SD610 2SD612 2SD612K mg30g1bl3 2SD472 MG30GIBL3 2SC2603 2SC3170 2SC1815 2sc2238 2SC2603 F 2sd882 hitachi

    2SB624

    Abstract: 2SD596 F50450
    Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)


    OCR Scan     		PDF 100mA) 2SB624 PWS10ms, 2SD596 F50450

    2SB624

    Abstract: 2SD596 marking ll
    Text: NEC Silicon T ran sisto r S ïf/ \ T 7 2SB624 P N P i t f f + S s T J U M S s y □> h # it 9 K w m ' , W V ' J v K IC ffl > L - riftilT - T o o h FE* fÎ 5 ^ 0 hpE : 200 T Y P . V 2 .8 ± 0.2 1.5 = - 1 .0 V , I c = -100 mA) c e O 2SD596 t =i > 7 °'l 9 > 9 'J T t o


    OCR Scan     		PDF 2SD596 2SB624 marking ll