SAMSUNG moviNAND
Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002
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K9F2808U0C
48-Ball,
63-Ball,
K9F28XXQ0C
K9F2808U0C-FCB0
K9F2808Q0C-HCB0
K9F2816U0C-HCB0
K9F2816U0C-PCB0
K9F2816Q0C-HCB0
K9F2808U0C-HCB0
SAMSUNG moviNAND
marking date code samsung semiconductor
NAND FLASH QDP
movinand DECODER
SLC nand hamming code 512 bytes
48 TSOP1 1220F
samsung 128G nand flash
NAND Flash Code Information
date code marking samsung Nand
K9F2808U0C-PCB0
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U37Y
Abstract: No abstract text available
Text: 1 Gigabit Stacked DDR2 SDRAM 128Mb x 8 DD51E Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and • • • • • • • •
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DD51E
128Mb
2D128M82U3BA
DD51E
3887x132
U37Y
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U37Y
Abstract: No abstract text available
Text: 1 Gigabit Stacked DDR2 SDRAM DD50E 256Mb x 4 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and • • • • • • • •
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DD50E
256Mb
2D256M42U3BA
DD50E
3887x132
U37Y
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U48B
Abstract: DDR2 Mechanical Dimensions
Text: 2 Gigabit Stacked DDR2 SDRAM DD52E 512Mb x 4 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls
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DD52E
512Mb
2D512M42U4BA
DD52E
U48B
DDR2 Mechanical Dimensions
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Untitled
Abstract: No abstract text available
Text: 2 Gigabit Stacked DDR2 SDRAM DD53E 256Mb x 8 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls
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DD53E
256Mb
2D256M82U4BA
DD53E
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Am29LV* 64 boot
Abstract: 740-0007 am29lv065 SA14 SA15 SA16 FSA063 SA10 SA11 SA12
Text: PRELIMINARY Am29LV652D 128 Megabit 16 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29LV065D) in a single 63-ball 11 x 12 mm FBGA package (Note: Features will be described for each internal Am29LV065D)
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Am29LV652D
Am29LV065D
63-ball
Am29LV* 64 boot
740-0007
am29lv065
SA14
SA15
SA16
FSA063
SA10
SA11
SA12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV652D 128 Megabit 16 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29LV065D) in a single 63-ball 11 x 12 mm FBGA package (Note: Features will be described for each internal Am29LV065D)
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Am29LV652D
Am29LV065D
63-ball
FSA063--63-Ball
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daewon
Abstract: DAEWON tray 48 daewon tray 260 9 130 451 044 DAEWON FBGA 9 140 010 044 daewon tray TRAY MPPO
Text: Chapter 5 Trays Fine-Pitch Ball Grid Array: NLB 044, VDA 044, VDD 044, NLB 056, NSB 056 3416 \ f27328a \ 12-13-07 Notes: See next page for detailed views 1 All dimensions are in millimeters. Packages and Packing Methodologies Handbook 17 Oct 2008 5-63
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f27328a
f29719a
f29858a
daewon
DAEWON tray 48
daewon tray 260
9 130 451 044
DAEWON FBGA
9 140 010 044
daewon tray
TRAY MPPO
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29DL642G 128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29DL640G) in a single 63-ball 12 x 11 mm Fine-pitch BGA package (features are described herein for each internal Am29DL640G)
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Am29DL642G
16-Bit)
Am29DL640G
63-ball
FSD063
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29DL642G 128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29DL640G) in a single 63-ball 12 x 11 mm Fine-pitch BGA package (features are described herein for each internal Am29DL640G)
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Am29DL642G
16-Bit)
Am29DL640G
63-ball
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE/BE 10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard
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DS05-20889-1E
MBM29PDS322TE/BE
MBM29PDS322TE/BE
32M-bit,
63-ball
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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DS05-20892-2E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
F0203
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Marking code vacc
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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DS05-20892-3E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
F0206
Marking code vacc
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to
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DS05-20887-2E
MBM29DL640E80/90/12
MBM29DL640E
48-pin
63-ball
F0203
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FPT-48P-M19
Abstract: FPT-48P-M20 MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to
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DS05-20887-1E
MBM29DL640E80/90/12
MBM29DL640E
48-pin
63-ball
FPT-48P-M19
FPT-48P-M20
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BGA-63
Abstract: Diode SA98 BGA63
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-3E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 63-ball FBGA packages. This device is designed
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DS05-20887-3E
MBM29DL640E80/90/12
MBM29DL640E
48-pin
63-ball
F0305
BGA-63
Diode SA98
BGA63
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FPT-48P-M19
Abstract: FPT-48P-M20 MBM29DL640E 5C000
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to
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DS05-20887-2E
MBM29DL640E80/90/12
MBM29DL640E
48-pin
63-ball
F0203
FPT-48P-M19
FPT-48P-M20
5C000
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MS-034
Abstract: JEDEC FBGA 11 JEDEC MS-034-AAJ-1
Text: Altera Device Package Information 400-Pin Wirebond FineLine Ball-Grid Array FBGA • ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. M is the maximum solder ball matrix size. Package Information
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400-Pin
MS-034
MS-034
JEDEC FBGA 11
JEDEC MS-034-AAJ-1
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JEDEC FBGA 12 19
Abstract: MS-034 JEDEC OUTLINE
Text: Altera Device Package Information 324-Pin Non-Thermally Enhanced FineLine Ball-Grid Array FBGA • ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. M is the maximum solder ball matrix size. Package Information
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324-Pin
MS-034
JEDEC FBGA 12 19
MS-034
JEDEC OUTLINE
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8355F
Abstract: CY7C37128 JESD22 plaskon
Text: Cypress Semiconductor Package Qualification Report QTP# 000473 VERSION 1.0 April, 2000 100/256 Lead Fine Pitch Ball Grid Array FBGA ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Cypress Semiconductor
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CY37256VP256-BB
JEDDEC22
CY7C37128VP100-
619937560L
619937561L
8355F
CY7C37128
JESD22
plaskon
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8355F
Abstract: 130C JESD22
Text: Cypress Semiconductor Package Qualification Report QTP# 99331 VERSION 2.0 December, 2000 48 Lead Fine Pitch Ball Grid Array FBGA 7mm x 8.5mm ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Kim-Ngan Nguyen
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BA48G
48-ball
O925255
CY62146VLL-BAIB
150C/-55)
8355F
130C
JESD22
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Untitled
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND &KLS6FDOH 3DFNDJLQJ IRU $0' ODVK 0HPRU\ 3URGXFWV 2 Chip-Scale Packaging Technology Background The AMD Fine-pitch Ball Grid Array FBGA) The FBGA package offers system designers a chip-scale package for Flash memories that provides a significant reduction in board real estate over TSOP packages and provides many
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Am29SL800
XXX-00-06/98
21627B
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transistor smd G46
Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Text: FBGA User’s Guide Version 4.2 -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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N32-2400
22142J
transistor smd G46
fluke 52 k/j Thermocouple
7512 pin diodes in micro semi data sheet
smd transistor marking ey
SMD MARKING CODE h5
MCP Technology Trend
BGA-64 pad
AMD reflow soldering profile BGA
SMD MARKING CODE l6
BGA Solder Ball 0.6mm
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