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    8A34045C-000NLG Renesas Electronics Corporation Multichannel DPLL / DCO - Two / Eight Channels Visit Renesas Electronics Corporation
    8A34045C-000NLG8 Renesas Electronics Corporation Multichannel DPLL / DCO - Two / Eight Channels Visit Renesas Electronics Corporation
    8A34045C-000NLG# Renesas Electronics Corporation Multichannel DPLL / DCO - Two / Eight Channels Visit Renesas Electronics Corporation
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    5C000 Price and Stock

    Murata Manufacturing Co Ltd CSTNE8M00GH5C000R0

    CERAMIC RES 8.0000MHZ 33PF SMD
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    DigiKey CSTNE8M00GH5C000R0 Reel 129,000 3,000
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    Mouser Electronics CSTNE8M00GH5C000R0 51,483
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    Newark CSTNE8M00GH5C000R0 Reel 12,000 3,000
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    CSTNE8M00GH5C000R0 Cut Tape 973 5
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    TTI CSTNE8M00GH5C000R0 Reel 213,000 3,000
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    Avnet Abacus CSTNE8M00GH5C000R0 12,000 9 Weeks 3,000
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    Avnet Asia CSTNE8M00GH5C000R0 3,000 12 Weeks 3,000
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    Chip-Germany GmbH CSTNE8M00GH5C000R0 20
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    Chip1Stop CSTNE8M00GH5C000R0 39,000
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    CSTNE8M00GH5C000R0 1,288
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    CSTNE8M00GH5C000R0 Cut Tape 381
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    New Advantage Corporation CSTNE8M00GH5C000R0 96,000 1
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    Win Source Electronics CSTNE8M00GH5C000R0 197,790
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    Murata Manufacturing Co Ltd CSTNR6M00GH5C000R0

    CERAMIC RES 6.0000MHZ 39PF SMD
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    DigiKey CSTNR6M00GH5C000R0 Cut Tape 33,993 1
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    CSTNR6M00GH5C000R0 Digi-Reel 33,993 1
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    CSTNR6M00GH5C000R0 Reel 27,000 3,000
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    Mouser Electronics CSTNR6M00GH5C000R0 6,515
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    Newark CSTNR6M00GH5C000R0 Reel 6,000 3,000
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    CSTNR6M00GH5C000R0 Cut Tape 5,485 5
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    Chip1Stop CSTNR6M00GH5C000R0 Cut Tape 2,705
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    CSTNR6M00GH5C000R0 203
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    Harvatek Corporation B18S1UYG-05C000234U1930

    LED YLW-GRN CLEAR 0402 SMD R/A
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    DigiKey B18S1UYG-05C000234U1930 Cut Tape 15,564 1
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    B18S1UYG-05C000234U1930 Digi-Reel 15,564 1
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    B18S1UYG-05C000234U1930 Reel 12,000 4,000
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    Harvatek Corporation B18S1USD-05C000234U1930

    LED RED CLEAR 0402 SMD R/A
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    DigiKey B18S1USD-05C000234U1930 Reel 8,000 4,000
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    Murata Manufacturing Co Ltd CSTNE10M0GH5C000R0

    CERAMIC RES 10.0000MHZ 33PF SMD
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    DigiKey CSTNE10M0GH5C000R0 Digi-Reel 1,252 1
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    CSTNE10M0GH5C000R0 Cut Tape 1,252 1
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    Mouser Electronics CSTNE10M0GH5C000R0 13,141
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    Newark CSTNE10M0GH5C000R0 Reel 3,000 3,000
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    Avnet Abacus CSTNE10M0GH5C000R0 11 Weeks 3,000
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    5C000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV6402M S29GL128N 110R

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


    Original     		PDF M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


    Original     		PDF Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    HDMP 1034 AG

    Abstract: HDMP-1032 AMCC DATE CODE MARKING AMCC 460, DATE CODE 4X511 sg ag20 AF2-2 hdmp 1032 1034 marking M29 TRANSISTOR AH-16
    Text: Released Datasheet PMC-Sierra, Inc. Long Form Data Sheet PMC-980618 Issue 3 PM73487 QRT 622 Mbps ATM Traffic Management Device PM73487 QRT 622 Mbps ATM Traffic Management Device DATASHEET Released Issue 3: JUN 1999 Released Datasheet PMC-Sierra, Inc. PMC-980618


    Original     		PDF PMC-980618 PM73487 PM73487 PMC-981001 HDMP 1034 AG HDMP-1032 AMCC DATE CODE MARKING AMCC 460, DATE CODE 4X511 sg ag20 AF2-2 hdmp 1032 1034 marking M29 TRANSISTOR AH-16

    LHF12F16

    Abstract: wp 146 LH28F128BFHT-PTTL75A
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    MX29LV640D

    Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
    Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales


    Original     		PDF MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX

    MX29LV640ebt

    Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
    Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


    Original     		PDF MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132

    M25PX64

    Abstract: No abstract text available
    Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an


    Original     		PDF M25PX64 64-Mbit, 64-Kbyte 64-byte M25PX64

    FTA073

    Abstract: No abstract text available
    Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am50DL128BH FTA073--73-Ball FTA073

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640

    Untitled

    Abstract: No abstract text available
    Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum


    Original     		PDF M25P64 50MHz 64Mbit 512Kbit) 64Mbit) 2017h) 20-Year

    Untitled

    Abstract: No abstract text available
    Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


    Original     		PDF M29DW640F TSOP48 24Mbit

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


    Original     		PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400

    4kw marking

    Abstract: No abstract text available
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		PDF F0307 4kw marking

    Untitled

    Abstract: No abstract text available
    Text: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 2, 2012


    Original     		PDF A25LQ64 64M-BIT 16-pin 300mil) 209mil) Figure-36-1,

    Untitled

    Abstract: No abstract text available
    Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.


    Original     		PDF Am29DL640D 16-Bit) 256od)

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations


    Original     		PDF Am29LV640MH/L 16-Bit/8 128-word/256-byte 8-word/16-byte TS056 TSR056 0004h 0001h