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    60W VHF CIRCUIT RF AMPLIFIER Search Results

    60W VHF CIRCUIT RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    60W VHF CIRCUIT RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    toshiba S-AV32

    Abstract: S-AV32 60W VHF circuit RF amplifier 5-53P
    Text: S-AV32 TOSHIBA RF POWER AMPLIFIER MODULE S-AV32 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :60W Min. ･Power Gain :30.7dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV32 Po60W VDD12 VDD16 toshiba S-AV32 S-AV32 60W VHF circuit RF amplifier 5-53P

    RD70HVF

    Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz

    RD70HVF1

    Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor

    TOSHIBA RF Power Module S-AV36

    Abstract: S-AV36 toshiba S-AV36 sav36 5-53P VDD12
    Text: S-AV36 TOSHIBA RF POWER AMPLIFIER MODULE S-AV36 ○FM RF POWER AMPLIFIER MODULE for VHF BAND ･Output Power :80W Min. ･Power Gain :32.0dB (Min.) ･Total Efficiency:45% (Min.) MAXIMUM RATINGS (Tc = 25℃, ZG = ZL = 50Ω) CHARACTERISTIC SYMBOL TEST CONDITION


    Original     		PDF S-AV36 Po60W VDD12 VDD16 TOSHIBA RF Power Module S-AV36 S-AV36 toshiba S-AV36 sav36 5-53P

    RD70HVF1-101

    Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz Oct2011 RD70HVF1-101 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier

    RD70HVF

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF

    RD70HVF

    Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF rd70 RD70HVF1-101 100OHM 071J 1695 GP 1

    RD70HVF1

    Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet

    S-AV32A

    Abstract: S-AV32 toshiba S-AV32 134-174 5-53P S-AU82AL
    Text: S-AV32A TOSHIBA RF POWER AMPLIFIER MODULE S-AV32A FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL VHF RADIO APPLICATIONS ･Power Gain: 30.7 dB Min. ･Total Efficiency: 45% (Min.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, IT < 15 A, ZG = ZL = 50Ω) CHARACTERISTICS


    Original     		PDF S-AV32A S-AV32A S-AV32 toshiba S-AV32 134-174 5-53P S-AU82AL

    RD70HVF1

    Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 071J RF Transistor Selection 100OHM

    Granberg

    Abstract: MAPM-030400-060C00 Granberg VSWR Protection MAPM-030400 AN4003 AD8361 AD8362 AN-20 MAPM
    Text: Application Note AN4003 Closed Loop Control Maximizes MAPM-030400-010C00 and MAPM-030400-060C00 Module Performance Rev. 1 I. Introduction The MAPM-030400-010C00 and MAPM-030400-060C00 RF amplifier modules work together to form the basic building block of a 30 MHz to 400 MHz amplifier that can supply over 60 W of output power. With the addition


    Original     		PDF AN4003 MAPM-030400-010C00 MAPM-030400-060C00 Granberg Granberg VSWR Protection MAPM-030400 AN4003 AD8361 AD8362 AN-20 MAPM

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    TMPA8891

    Abstract: TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879
    Text: ASSPs Audio & Video Equipment ICs z 66 Communications Equipment ICs z 78 Radio-Frequency Power Amp ICs z 81 Automotive ICs z 82 Display Driver ICs z 83 Network & Interface ICs z 86 Peripheral Equipment LSIs z 87 Other Consumer Product ICs z 88 65 Audio & Video Equipment ICs


    Original     		PDF TMPA8873CxCNG TMPA8879CxCNG TMPA8891CxCNG TMPA8893CxCNG TMPA8897CxCNG TMPA8899CxCNG TMPA8863CxNG TMPA8869CxNG TMPA8873PSCNG TMPA8879PSCNG TMPA8891 TB1334FG TMPA8893 TB32160AFG TB1334 TMPA8897PSCNG TB1318FG TB32302fg TA8275HQ TMPA8879

    TB1334FG

    Abstract: TC90517FG TB1334 TB2926 tc94a92fg TC90517 tc90517fg toshiba tb31224cf tc94a34fg TB31371
    Text: SEMICONDUCTOR GENERAL CATALOG ASSPs Audio & Video Equipment ICs Communications Equipment ICs Radio-Frequency Power Amp ICs Automotive ICs Display Driver ICs Peripheral Equipment LSIs Other Consumer Product ICs 1 2009-8 SCE0004I Audio & Video Equipment ICs


    Original     		PDF SCE0004I TB1334FG HQFP64-P-1010-0 TC90196AFG LQFP208-P-2828-0 TC90192FG TC90192XBG P-FBGA265-1515-0 TB1334FG TC90517FG TB1334 TB2926 tc94a92fg TC90517 tc90517fg toshiba tb31224cf tc94a34fg TB31371

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original     		PDF

    Delta Electronics dps 350

    Abstract: Delta Electronics dps 600 Delta Electronics dps 250 S-4379 Delta Electronics dps 250 db Delta Electronics dps 200 Model 7908 tunnel diode specifications S-6033 Delta Electronics dps 500 "power supply"
    Text: Micro Miniature and Surface Mount Low Pass Filters RLC Electronics' Micro Miniature Low Pass Filters utilize proprietary dielectric materials and manufacturing techniques to achieve performance rivaling much larger devices. Standard units are 0.05dB Chebychev


    Original     		PDF

    MAR 544 MOSFET TRANSISTOR

    Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF 4th/Mar/02 RD70HVF1 75MHz70W 520MHz50W RD70HVF1 175MHz 520MHz MAR 544 MOSFET TRANSISTOR J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi 7386 mos transistor d 2689 MOSFET 2095 transistor

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


    OCR Scan     		PDF 2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


    OCR Scan     		PDF I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector