Untitled
Abstract: No abstract text available
Text: 10-FZ06NRA084FP02-P969F78 10-PZ06NRA084FP02-P969F78Y flow NPC 0 600V/75A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 75A parallel switch 75A and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout
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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
00V/75A
10-FZ06NRA084FP03-P969F78
10-PZ06NRA084FP03-P969F78Y
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IXXR110N60B4H1
Abstract: No abstract text available
Text: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings
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5-30kHz
IC110
IXXR110N60B4H1
ISOPLUS247TM
110N60B4
IXXR110N60B4H1
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75N60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IXXH75N60B3D1
IC110
125ns
O-247
IF110
062in.
75N60B3
75N60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR
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IC110
IXXH75N60B3D1
125ns
O-247
IF110
75N60B3
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375A1
Abstract: IXXH75N60C3
Text: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3
IC110
O-247
062in.
75N60C3
375A1
IXXH75N60C3
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75N60B3D1
Abstract: IXXH75N60B3
Text: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60B3
IC110
125ns
O-247
062in.
75N60B3D1
IXXH75N60B3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH75N60C3
O-247
Non60
75N60C3
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75N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH75N60B3
125ns
O-247
75N60B3D1
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75n60
Abstract: No abstract text available
Text: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3
IC110
O-247
062in.
75N60C3
75n60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH75N60C3D1
O-247
IF110
75N60C3
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75N60B3
Abstract: IXXH75N60B3D1 75n60
Text: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60B3D1
IC110
125ns
O-247
IF110
062in.
75N60B3
IXXH75N60B3D1
75n60
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150-A54
Abstract: No abstract text available
Text: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3D1
IC110
O-247
IF110
062in.
75N60C3
150-A54
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IXXH75N60C3D1
Abstract: 75N60C3
Text: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH75N60C3D1
IC110
O-247
IF110
062in.
75N60C3
IXXH75N60C3D1
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ixgh48n60c3d1
Abstract: IXYS IXGH48N60C3D1 48N60C3D1 48N60 ixgh48n60c3d
Text: GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) IXGH48N60C3D1 High speed PT IGBTs for 40-100kHz Switching = = ≤ = 600V 75A 2.5V 38ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ
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40-100kHz
IXGH48N60C3D1
O-247
IC110
ID110
ixgh48n60c3d1
IXYS IXGH48N60C3D1
48N60C3D1
48N60
ixgh48n60c3d
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NRA075FU-P969F08 preliminary datasheet flowNPC 0 600V/ 75A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● low inductance layout ● improved Low voltage write through capability Target Applications Schematic
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10-FZ06NRA075FU-P969F08
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G40N60
Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGT1Y40N60C3D
HGT1Y40N60C3D
150oC.
TA49273.
TA49063.
100ns
150oC
G40N60
g40n60c3d
HGTG40N60C3
RHRP3060
TA49063
TA49389
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NRA084FP02-P969F78 10-PZ06NRA084FP02-P969F78Y NPC Application flowNPC 0 600V/75A & 99mΩ PS* General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck MOSFET+IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff
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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
00V/75A
350nS
16kHz
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency
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10-FZ06NBA084FP-M306L48
00V/84A
2x84A
FZ06NBA084FP
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RHRU7540
Abstract: RHRU7550 RHRU7560
Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast
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RHRU7540,
RHRU7550,
RHRU7560
RHRU7550
TA49067)
RHRU7540
RHRU7560
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RHRU7540
Abstract: RHRU7550 RHRU7560
Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast
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RHRU7540,
RHRU7550,
RHRU7560
RHRU7550
TA49067)
RHRU7540
RHRU7560
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Untitled
Abstract: No abstract text available
Text: FZ06NPA070FP01 preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● low inductance layout Target Applications Schematic
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FZ06NPA070FP01
00V/75A
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Untitled
Abstract: No abstract text available
Text: FZ06NIA045FH01 target datasheet flowNPC 0 600V/75A & 45mΩ Features flow0 housing ● Neutral-point-Clamped inverter ● Ultra fast switching ● Clip-In PCB mounting ● Low Inductance Layout Target Applications Schematic ● Solar inverters Types ● FZ06NIA045FH01
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FZ06NIA045FH01
00V/75A
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RHRU7540
Abstract: RHRU7550 RHRU7560
Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet Title HR 540 HRU 50, HRU 60 bt A, 0V 0V per t ode ache File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067) are hyperfast diodes with soft recovery characteristics
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RHRU7540,
RHRU7550,
RHRU7560
RHRU7550
TA49067)
RHRU7540
RHRU7560
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10-FZ06NIA075SA-P926F33
Abstract: No abstract text available
Text: 10-FZ06NIA075SA-P926F33 preliminary datasheet NPC Application flowNPC0 600V/75A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω VGEon VGEoff Rgon Rgoff Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = 15 V -15 V 8Ω 8Ω Figure 2.
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10-FZ06NIA075SA-P926F33
00V/75A
10-FZ06NIA075SA-P926F33
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